JPH0323678A - Light-receiving generation element - Google Patents
Light-receiving generation elementInfo
- Publication number
- JPH0323678A JPH0323678A JP1158979A JP15897989A JPH0323678A JP H0323678 A JPH0323678 A JP H0323678A JP 1158979 A JP1158979 A JP 1158979A JP 15897989 A JP15897989 A JP 15897989A JP H0323678 A JPH0323678 A JP H0323678A
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving
- area
- receiving surface
- generation element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000010248 power generation Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、基板面積を増大させることなく、受光面積
を増加させた受光発電素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a photovoltaic power generation element whose light-receiving area is increased without increasing the substrate area.
受光発電素子、例えば太陽電池は一般にシリコン基板，
ガリウム砒素基板等の半導体基板に作り付けられるが、
発電の容量《起電力》を大きく取るためには、その受光
部分の＠積に比例することを考慮する必要がある。一方
、半導体基板の面積は、コス１・面からできるだけ小さ
くする必要がある。Photovoltaic power generation elements, such as solar cells, are generally made of silicon substrates,
Although it is built into a semiconductor substrate such as a gallium arsenide substrate,
In order to increase the power generation capacity (electromotive force), it is necessary to consider that it is proportional to the product of the light receiving part. On the other hand, the area of the semiconductor substrate needs to be made as small as possible in terms of cost 1.
第３図（ａ），（ｂ）は従来の受光発電素子の構造を示
す図で、第３図（１！）は一部回路を含む断面図、第３
図（ｂ）は、第３図（ａ）の受光面の平面図である。第
３図において、１はｎ型（またはｐ型）のシリコン基板
、２はこのシリコン基板１の表面に拡散等で作られたｐ
型（またはｎ型）層であり、３はｐｎ接合である。また
、４，５は電極、６は負荷であり、１１は受光発電素子
を示す。Figures 3 (a) and (b) are diagrams showing the structure of a conventional photovoltaic power generation element, Figure 3 (1!) is a cross-sectional view including a part of the circuit,
FIG. 3(b) is a plan view of the light receiving surface of FIG. 3(a). In FIG. 3, 1 is an n-type (or p-type) silicon substrate, and 2 is a p-type silicon substrate made by diffusion etc. on the surface of this silicon substrate 1.
It is a type (or n-type) layer, and 3 is a pn junction. Further, 4 and 5 are electrodes, 6 is a load, and 11 is a photovoltaic power generation element.
このような構造をｐｎ接合構造といい、この接合を含む
半導体基板１の受光面８に太陽光ｓ７等を照射すると、
これらのｐｎ接合３間に起電力が発生することはよく知
られている。また、その起電力は受光面８の面積に比例
することもよく知られている。Such a structure is called a pn junction structure, and when the light receiving surface 8 of the semiconductor substrate 1 including this junction is irradiated with sunlight s7, etc.,
It is well known that an electromotive force is generated between these pn junctions 3. It is also well known that the electromotive force is proportional to the area of the light receiving surface 8.
上記のように構成された従来の受光発電素子は、受光Ｗ
ｉ８の表画の形状が平坦状に作られており、単位面積当
りの起電力はこの受光面８の面積で制限されていたため
、大きな発電容量を得ることが困難であった。The conventional photovoltaic power generation element configured as described above has a photodetection W
The surface of the i8 was made flat, and the electromotive force per unit area was limited by the area of the light-receiving surface 8, making it difficult to obtain a large power generation capacity.
一方、受光発電素子１１の受光面８は鏡面状に滑らかに
作られることも周知である。このため、受光した光はｐ
ｎ接合３まで透過する光と受光面８で反射される光があ
り、受光効率が低下する欠点があった。On the other hand, it is also well known that the light-receiving surface 8 of the light-receiving power generating element 11 is made smooth and mirror-like. Therefore, the received light is p
There is light that passes through to the n-junction 3 and light that is reflected at the light-receiving surface 8, which has the drawback of reducing light-receiving efficiency.
この発明は、上記のような従来の問題点を解決するため
になされたもので、半導体基板面積を増大させることな
く、実効的に受光面積を増大せしめた受光発電素子を得
るものである。The present invention was made in order to solve the above-mentioned conventional problems, and provides a photovoltaic power generation element that effectively increases the light-receiving area without increasing the area of the semiconductor substrate.
この発明に係る受光発電素子は、ｐｎ接合が形成された
半導体基板の受光面を、半導体基板面積を増大させるこ
となく、受光面を実効的に増加せしめる凹凸状に形成し
たものである。In the photoelectric power generating element according to the present invention, the light receiving surface of a semiconductor substrate on which a pn junction is formed is formed into an uneven shape that effectively increases the light receiving surface without increasing the area of the semiconductor substrate.
この発明においては、受光面を凹凸状に形成することに
より、基板面積を増大させることなく、受光面積を増加
させることができる。In this invention, by forming the light-receiving surface in an uneven shape, the light-receiving area can be increased without increasing the substrate area.
以下、この発明の一実施例を図面に基づいて説明する。 Hereinafter, one embodiment of the present invention will be described based on the drawings.
第１図（ａＬ （ｂ）はこの発明の受光発電素子の構造
を示す図で、第２図と同様な断面図および平面図である
。FIG. 1 (aL (b) is a diagram showing the structure of the photovoltaic power generation element of the present invention, and is a sectional view and a plan view similar to FIG. 2.
この実施例は、受光面８ａ，８ｂおよびｐｎ接合３ａが
三角形状（鋸歯状）の凹凸状に形成されており、受光面
積が実効的に増加している。すなわち、第１図の実施例
では、受光面８ａおよび８ｂのように襞をつけ、受光面
８ａと受光面８ｂの相対角度を９０度とすれば、受光面
積は、第３図の従来の受光面積と比較し約４０％増加す
ることは容易にわかる。ただし、受光面積が第１図のよ
うに増加しても、第３図のように太陽光線７が受光発電
素子１０に直角に照射したのでは、この発明の場合の起
電力は従来例と大差なくなる。このため、太陽光！４Ｉ
７の照射の方法を工夫し、例えば反射効率の高い（理想
的には１００％）鏡または屈折効率の良いプリズム等を
用い、第１図（ａ）に示す太陽光線７ａおよび７ｂのよ
うに傾け、各受光面８ａおよび８ｂに対し垂直に照射す
るようにする。In this embodiment, the light-receiving surfaces 8a, 8b and the pn junction 3a are formed in a triangular (sawtooth-like) uneven shape, thereby effectively increasing the light-receiving area. That is, in the embodiment shown in FIG. 1, if the light-receiving surfaces 8a and 8b are folded and the relative angle between the light-receiving surfaces 8a and 8b is 90 degrees, the light-receiving area is equal to that of the conventional light-receiving surface shown in FIG. It can be easily seen that the area increases by about 40%. However, even if the light-receiving area increases as shown in FIG. 1, the electromotive force in the case of this invention is significantly different from the conventional example if the sunlight 7 irradiates the photo-receiving power generation element 10 at right angles as shown in FIG. It disappears. For this reason, sunlight! 4I
By devising the irradiation method in step 7, for example, using a mirror with high reflection efficiency (ideally 100%) or a prism with high refraction efficiency, the irradiation method is tilted as shown in the sunlight rays 7a and 7b shown in Fig. 1(a). , the light is irradiated perpendicularly to each of the light receiving surfaces 8a and 8b.
第２図（ａ），（ｂ）はこの発明の他の実施例を示す受
光発電素子の構造を示す図で、第１図（ａ），（ｂ）と
同様な構成図である。FIGS. 2(a) and 2(b) are diagrams showing the structure of a light-receiving power generating element showing another embodiment of the present invention, and are similar configuration diagrams to FIGS. 1(a) and (b).
この実施例は、受光面８にこの受光面８の一部分を残し
て曲面状、例えば円筒状の受光面８Ｃを多数形成したも
のである。すなわち、平坦状の受光面８およびｐｎ接合
３の他に、円筒状の受光面８Ｃおよびｐｎ接合３ｂが多
数形成されている。In this embodiment, a large number of curved, for example cylindrical, light receiving surfaces 8C are formed on the light receiving surface 8, leaving a portion of the light receiving surface 8 intact. That is, in addition to the flat light receiving surface 8 and the pn junction 3, a large number of cylindrical light receiving surfaces 8C and pn junctions 3b are formed.
このように、多数の円筒状の受光面８Ｃを形成すること
により、受光面積が増大するとともに円筒状の受光面８
Ｃで反射された入射光が円筒内で袋小路に入ることによ
り、その反射光が他の円筒状の受光面８Ｃに照射され、
結果的に受光効率が向上することになる。In this way, by forming a large number of cylindrical light receiving surfaces 8C, the light receiving area increases and the cylindrical light receiving surface 8C is formed.
When the incident light reflected by C enters a blind alley within the cylinder, the reflected light is irradiated onto another cylindrical light-receiving surface 8C,
As a result, light receiving efficiency is improved.
なお、上記実施例では、実効的に受光面積を増加させる
手段として、受光面を鋸歯状に形成したり、多数の円筒
状の受光面を形成したが、形状はこれに限４ず、曲面形
状，矩形状，球面状，多角形状，多角球面状等、受光面
積が実効的に増加する形状であればよい。In the above embodiment, as a means to effectively increase the light receiving area, the light receiving surface is formed in a sawtooth shape or a large number of cylindrical light receiving surfaces are formed. , a rectangular shape, a spherical shape, a polygonal shape, a polygonal spherical shape, etc., any shape that effectively increases the light receiving area may be used.
以上説明したように、この発明は、ｐｎ接合が形成され
た半導体基板の受光面を、半導体基板面積を増大させる
ことなく、受光面を実効的に増加せしめる凹凸状に形成
したので、基板面積を増木させることなく、受光面積を
実効的に増加させることができる。したがって、受光効
率が゜向上するとともに、変換効率のすぐれた受光発電
素子が得られる効果がある。As explained above, in the present invention, the light-receiving surface of a semiconductor substrate on which a pn junction is formed is formed into an uneven shape that effectively increases the light-receiving surface without increasing the semiconductor substrate area. The light-receiving area can be effectively increased without increasing the number of trees. Therefore, the light receiving efficiency is improved and a light receiving power generating element with excellent conversion efficiency can be obtained.
第１図（ａ），（ｂ）はこの発明の一実施例を示す受光
発電素子の構造を示す図で、第１図（ａ）は一部回路を
含む断面図、第１図（ｂ）は、第１図（ａ）の受光面の
平面図、第２図（ａＬ （ｂ）はこの発明の他の実施例
を示す第１図（ａ），（ｂ）と同様な断面図および平面
図、第３図（ａ），（ｂ）は従来の受光発電素子を示す
第１図と同様な断面図および平面図である。
図において、１はｎ型シリコン基板、２はｐ型層であり
、３，３ａ，３ｂはｐｎ接合、４，５はｆｌ極、６は負
荷、７．７ａ，７ｂは太陽光線、８，８ａ，８ｂは受光
面、１０は受光発電素子である。
なお、各図中の同一符号は同一または相当部分を示す。FIGS. 1(a) and 1(b) are diagrams showing the structure of a photovoltaic power generation element showing an embodiment of the present invention, FIG. 1(a) is a cross-sectional view including a part of the circuit, and FIG. 1(b) is a plan view of the light-receiving surface in FIG. 1(a), and FIG. 2(b) is a sectional view and plan view similar to FIGS. 3(a) and 3(b) are a cross-sectional view and a plan view similar to FIG. 1 showing a conventional photovoltaic power generation element. In the figure, 1 is an n-type silicon substrate, and 2 is a p-type layer. 3, 3a, 3b are pn junctions, 4, 5 are fl poles, 6 is a load, 7.7a, 7b are sunlight rays, 8, 8a, 8b are light receiving surfaces, and 10 is a photovoltaic power generation element. The same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
体基板面積を増大させることなく、前記受光面を実効的
に増加せしめる凹凸状に形成したことを特徴とする受光
発電素子。1. A light-receiving power generation element, characterized in that a light-receiving surface of a semiconductor substrate on which a pn junction is formed is formed in an uneven shape that effectively increases the light-receiving surface without increasing the area of the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158979A JPH0323678A (en) | 1989-06-20 | 1989-06-20 | Light-receiving generation element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1158979A JPH0323678A (en) | 1989-06-20 | 1989-06-20 | Light-receiving generation element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0323678A true JPH0323678A (en) | 1991-01-31 |
Family
ID=15683560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1158979A Pending JPH0323678A (en) | 1989-06-20 | 1989-06-20 | Light-receiving generation element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0323678A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1403931A2 (en) * | 2002-09-30 | 2004-03-31 | Canon Kabushiki Kaisha | Method for growing a silicon film, method for manufacturing a solar cell, semiconductor substrate, and solar cell |
| JP2011077359A (en) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | Solar cell |
| US10184471B2 (en) | 2014-01-09 | 2019-01-22 | Shinhang Co., Ltd. | Trochoid pump for transferring high-viscosity liquid under high pressure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914682A (en) * | 1982-07-16 | 1984-01-25 | Denkaihaku Kogyo:Kk | Amorphous silicon solar battery |
| JPS60158678A (en) * | 1983-12-23 | 1985-08-20 | ユニサーチ リミテツド | Solar battery and method of producing same |
| JPS60178671A (en) * | 1984-02-24 | 1985-09-12 | Agency Of Ind Science & Technol | Solar ray power generation system |
| JPS62101084A (en) * | 1985-10-28 | 1987-05-11 | Sharp Corp | Optical confinement solar battery |
| JPS6381986A (en) * | 1986-09-26 | 1988-04-12 | Anelva Corp | Photoelectric conversion element |
-
1989
- 1989-06-20 JP JP1158979A patent/JPH0323678A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5914682A (en) * | 1982-07-16 | 1984-01-25 | Denkaihaku Kogyo:Kk | Amorphous silicon solar battery |
| JPS60158678A (en) * | 1983-12-23 | 1985-08-20 | ユニサーチ リミテツド | Solar battery and method of producing same |
| JPS60178671A (en) * | 1984-02-24 | 1985-09-12 | Agency Of Ind Science & Technol | Solar ray power generation system |
| JPS62101084A (en) * | 1985-10-28 | 1987-05-11 | Sharp Corp | Optical confinement solar battery |
| JPS6381986A (en) * | 1986-09-26 | 1988-04-12 | Anelva Corp | Photoelectric conversion element |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1403931A2 (en) * | 2002-09-30 | 2004-03-31 | Canon Kabushiki Kaisha | Method for growing a silicon film, method for manufacturing a solar cell, semiconductor substrate, and solar cell |
| EP1403931A3 (en) * | 2002-09-30 | 2009-04-22 | Canon Kabushiki Kaisha | Method for growing a silicon film, method for manufacturing a solar cell, semiconductor substrate, and solar cell |
| JP2011077359A (en) * | 2009-09-30 | 2011-04-14 | Tokyo Electron Ltd | Solar cell |
| US10184471B2 (en) | 2014-01-09 | 2019-01-22 | Shinhang Co., Ltd. | Trochoid pump for transferring high-viscosity liquid under high pressure |
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