JPS6222405B2 - - Google Patents
Info
- Publication number
- JPS6222405B2 JPS6222405B2 JP54081206A JP8120679A JPS6222405B2 JP S6222405 B2 JPS6222405 B2 JP S6222405B2 JP 54081206 A JP54081206 A JP 54081206A JP 8120679 A JP8120679 A JP 8120679A JP S6222405 B2 JPS6222405 B2 JP S6222405B2
- Authority
- JP
- Japan
- Prior art keywords
- infrared
- light receiving
- ctd
- sensing element
- mesa
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- AMHIJMKZPBMCKI-PKLGAXGESA-N ctds Chemical compound O[C@@H]1[C@@H](OS(O)(=O)=O)[C@@H]2O[C@H](COS(O)(=O)=O)[C@H]1O[C@H]([C@@H]([C@H]1OS(O)(=O)=O)OS(O)(=O)=O)O[C@H](CO)[C@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O[C@@H](O[C@@H]1CO)[C@H](OS(O)(=O)=O)[C@@H](OS(O)(=O)=O)[C@@H]1O2 AMHIJMKZPBMCKI-PKLGAXGESA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
- H01L27/14881—Infrared CCD or CID imagers of the hybrid type
Description
【発明の詳細な説明】
本発明は赤外線検知装置、とくに電荷転送素子
と赤外線用光電変換素子集合体とが一体化された
赤外線検知装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an infrared detection device, and particularly to an infrared detection device in which a charge transfer element and an infrared photoelectric conversion element assembly are integrated.
シリコン（Si）を基板材料とする電荷転送素子
（以下CTDと略記する）はすでに周知であり、撮
像用、信号処理用、メモリ用等種々の用途に有望
視されている。しかしSiのCTDは波長約１μｍ
以下の光にしか感じないため、赤外領域で動作す
るCTDの開発が望まれている。 Charge transfer devices (hereinafter abbreviated as CTD) using silicon (Si) as a substrate material are already well known and are expected to be used in various applications such as imaging, signal processing, and memory. However, the CTD of Si has a wavelength of approximately 1 μm.
The development of CTDs that operate in the infrared region is desired, as we are only sensitive to the following types of light:
一方本発明者らの内２名は、１枚の多元半導体
基板の表面に多数の光起電力型赤外線検知素子を
配列せしめた赤外線検知素子集合体とSiから成る
CTDとをたがいに固着して一体化した構造の赤
外線検知装置を特願昭53−90777号により提案し
た。この提案に係る赤外線検知装置は、赤外線検
知素子のpn接合の直上部に突出した金属層を形
成し、この金属層によつて該検知素子をCTDに
固着することにより製作される。しかるにこの固
着工程に際し赤外線検知素子に損傷を生じさせ易
い欠点がある。 On the other hand, two of the present inventors proposed an infrared sensing element assembly consisting of a large number of photovoltaic infrared sensing elements arranged on the surface of a single multi-component semiconductor substrate and Si.
In Japanese Patent Application No. 53-90777, we proposed an infrared detection device with an integrated structure in which a CTD and a CTD are fixedly attached to each other. The infrared detection device according to this proposal is manufactured by forming a protruding metal layer just above the pn junction of the infrared detection element and fixing the detection element to the CTD using this metal layer. However, there is a drawback that the infrared detecting element is easily damaged during this fixing process.
第１図は上述した先願発明の赤外線検知装置の
構造を断面図として示したもので、Ｄは多元半導
体から成る薄板１を基板とし、その片側表面にメ
サ状の受光部１０１，１０２，１０３，……が形
成された赤外線検知素子集合体である。この各メ
サ内にpn接合面J1，J2，J3……があつてこの接合
面で入射した赤外線のエネルギーを電気信号に変
換する。上記各メサの頂部を除き、上記基板１の
上面は陽極酸化膜２で覆われている。該陽極酸化
膜２は薄板１の表面とくにメサ側面のpn接合面
の露出部を保護する目的で形成されたものであ
る。 FIG. 1 is a cross-sectional view showing the structure of the infrared detecting device according to the invention of the earlier application, and D is a thin plate 1 made of a multi-component semiconductor as a substrate, and mesa-shaped light receiving portions 101, 102, 103 are formed on one surface of the thin plate 1. ,... is an infrared sensing element assembly formed. Within each of these mesas are pn junction surfaces J 1 , J 2 , J 3 . . . which convert incident infrared energy into electrical signals. The upper surface of the substrate 1 is covered with an anodic oxide film 2 except for the top of each mesa. The anodic oxide film 2 is formed for the purpose of protecting the surface of the thin plate 1, particularly the exposed portion of the pn junction surface on the side surface of the mesa.
赤外線検知素子Ｄの裏面には非整流性電極２０
０が形成されており、かつ該裏面は赤外線透過性
の接着剤３を介して透明材料たとえばサフアイア
から成る支持板４に固着されている。上側の
CTD２０はSi基板２１の片側表面に二酸化シリ
コン（SiO2）の被膜２２および入力ダイオードと
なる逆導電型拡散層３０１，３０２，３０３，…
…を有し、SiO2被膜２２上に後述する電極群が
被着形成されている。 A non-rectifying electrode 20 is provided on the back surface of the infrared sensing element D.
0 is formed, and the back surface thereof is fixed to a support plate 4 made of a transparent material such as sapphire via an infrared transparent adhesive 3. upper side
The CTD 20 includes a silicon dioxide (SiO 2 ) coating 22 on one surface of a Si substrate 21 and reverse conductivity type diffusion layers 301, 302, 303, . . . which become input diodes.
..., and an electrode group to be described later is formed on the SiO 2 film 22.
第２図は前図中１個のサメ状受光部１０１の近
傍のみを拡大して示したもので、上記受光部１０
１の頂上部に金属層Ｍを介してCTD２０が圧着
されるため、その直下のメサの頂上部付近に結晶
欠陥Ｋが発生しており、そのうちのあるものは
pn接合J1に及んでいる。このような状態となれ
ば赤外線検知素子の性能が大幅に劣化する不都合
がある。なお４０１，５０１はCTD２０のゲー
ト電極である。 FIG. 2 shows an enlarged view of only the vicinity of one shark-shaped light receiving section 101 in the previous figure.
Since the CTD 20 is pressure-bonded to the top of the mesa 1 through the metal layer M, crystal defects K are generated near the top of the mesa directly below it, and some of them are
It spans the p-n junction J1 . In such a state, there is a disadvantage that the performance of the infrared sensing element is significantly deteriorated. Note that 401 and 501 are gate electrodes of the CTD 20.
本発明は前述の問題を解決したもので、赤外線
検知素子集合体とCTDとを結合して一体化し、
しかも赤外線検知素子の性能を劣化させることの
ない新しい赤外線検知装置を提供しようとするも
のである。 The present invention solves the above-mentioned problems by combining and integrating an infrared sensing element assembly and a CTD,
Furthermore, the present invention aims to provide a new infrared detection device that does not degrade the performance of the infrared detection element.
以下図面を用いて本発明の一実施例について詳
細に説明する。なお第１、第２両図と同等の部分
には同一符号を付して示す。 An embodiment of the present invention will be described in detail below with reference to the drawings. Note that parts that are equivalent to those in both Figures 1 and 2 are designated by the same reference numerals.
第３図は本発明に係る赤外線検知装置の一実施
例の構造を断面図として示したもので、Ｄは３元
半導体たとえば水銀−カドミウム−テルル
（Hg1-xCdxTe）から成る赤外線検知素子集合体
（以下単に集合体と略記する）、２０はSiを基板材
料とするCTD、５０１，５０２，５０３はゲー
ト電極である。集合体Ｄは、第１図に示した従来
の装置と同様にメサ状受光部１０１，１０２，１
０３，……および陽極酸化膜２を有している。た
だしメサ頂面に接触する金属層６０１，６０２，
６０３，……はCTD２０の表面には接触せず、
該表面との間には若干の空隙が残されている。し
かして上記各金属層６０１，６０２，６０３，…
…は各メサ１０１，１０２，１０３，……の側面
にそれぞれ延長しており、メサどうしの間でボタ
ン状の金属層７０１，７０２，７０３，……につ
ながつている。 FIG. 3 is a cross-sectional view showing the structure of an embodiment of the infrared detection device according to the present invention, where D is a collection of infrared detection elements made of a ternary semiconductor such as mercury-cadmium-tellurium (Hg 1-x CdxTe). 20 is a CTD whose substrate material is Si, and 501, 502, and 503 are gate electrodes. As in the conventional device shown in FIG.
03, . . . and an anodic oxide film 2. However, the metal layers 601, 602 in contact with the mesa top surface,
603, ... do not contact the surface of CTD20,
A slight gap is left between the surface and the surface. However, each of the metal layers 601, 602, 603,...
. . extend to the side surfaces of each mesa 101, 102, 103, . . . and are connected to button-shaped metal layers 701, 702, 703, . . . between the mesas.
上記ボタン状金属層（以下金属バンプと言う）
７０１，７０２，７０３，……は集合体１と
CTD２０との接着と電気的接続とを兼ねてい
て、CTD２０の入力ダイオード３０１，３０
２，３０３，……とそれぞれ電気的接触（オーミ
ツク接触）を形成している。この構造により、各
受光部とCTD２０の入力回路との電気的接続が
達成される。しかも各金属バンプは受光部のpn
接合J1，J2，J3，……と離間しているため、CTD
との圧着に際しその直下の集合体１の部分に結晶
欠陥、損傷等が発生しても、pn接合の付近に達
する確率はきわめて小さい。 The above button-shaped metal layer (hereinafter referred to as metal bump)
701, 702, 703, ... are aggregate 1
It serves both as adhesive and electrical connection with CTD20, and is connected to input diodes 301 and 30 of CTD20.
2, 303, . . . form electrical contact (ohmic contact) with each other. With this structure, electrical connection between each light receiving section and the input circuit of the CTD 20 is achieved. Moreover, each metal bump is the pn of the light receiving part.
Since the junctions J 1 , J 2 , J 3 , ... are spaced apart, the CTD
Even if a crystal defect, damage, etc. occur in the part of the aggregate 1 directly under it when it is crimped with the pn junction, the probability that it will reach the vicinity of the pn junction is extremely small.
さらに本実施例においては万一上記結晶欠陥等
が発生しても、受光部１０１，１０２，１０３，
……の手前でその延長を阻止するために受光部の
周囲に溝Ｌが設けられている。 Furthermore, in this embodiment, even if the above-mentioned crystal defects occur, the light receiving parts 101, 102, 103,
A groove L is provided around the light receiving part in order to prevent its extension in front of the light receiving part.
第４図は第３図の実施例における集合体の受光
部側から見た平面図であつて、各メサ頂上部の金
属層６０１，６０２，……とその延長部および各
個の金属バンプのパターンが示されている。ちな
みに本実施例では各メサの頂上部の平面的形状は
正方形となつているが、正方形以外の多角形、ま
たは円形にしても差支えない。また溝Ｌは各メサ
の周囲を完全に囲むように形成されているが、図
の縦方向の溝部分Laは省略してもよい。 FIG. 4 is a plan view of the assembly in the embodiment shown in FIG. 3, viewed from the light-receiving section side, and shows the metal layers 601, 602, . . . on the top of each mesa, their extensions, and patterns of each metal bump It is shown. Incidentally, in this embodiment, the planar shape of the top of each mesa is a square, but it may be a polygon other than a square or a circle. Although the groove L is formed to completely surround each mesa, the groove portion La in the vertical direction in the figure may be omitted.
つぎに第５図は集合体の受光部側とは逆方向か
ら見た平面図で、この面には格子状の電極２００
が形成されており、電極２００の被着されていな
い箇所の点線枠イ，ロ，ハ，ニ，……は対向表面
にある受光部（メサ）の位置を示す。ただしこの
ような電極の形状と位置とは最初に引用した本発
明者らの先願発明と本質的に同一である。このよ
うな電極２００および金属バンプ７０１，７０
２，……は、多元半導体から成る赤外線検知素子
に通常用いられてきたインジウム（In）を主体と
する低融点合金によつて形成すればよい。 Next, FIG. 5 is a plan view of the assembly seen from the opposite direction from the light receiving section side, and a grid-like electrode 200 is arranged on this surface.
are formed, and the dotted line frames A, B, C, D, . . . at locations where the electrode 200 is not attached indicate the positions of the light receiving portions (mesas) on the opposing surface. However, the shape and position of such electrodes are essentially the same as in the earlier invention of the present inventors cited above. Such an electrode 200 and metal bumps 701, 70
2, . . . may be formed of a low melting point alloy mainly composed of indium (In), which has been commonly used in infrared sensing elements made of multi-component semiconductors.
なお本実施例においては、先願発明に係る第１
図の装置に用いられていたサフアイアから成る支
持板４は省略されている。このようにしても、集
合体ＤとCTD２０とを一体化した状態で研磨、
電極形成等の処理を行えば集合体１に損傷を及ぼ
すおそれはない。もちろん取扱いの便宜のために
第１図の装置と同様に支持板を使用しても差支え
ない。 In this example, the first invention related to the prior invention is
The support plate 4 made of sapphire used in the illustrated device has been omitted. Even in this case, polishing can be performed while the aggregate D and CTD20 are integrated.
If processing such as electrode formation is performed, there is no risk of damaging the assembly 1. Of course, for convenience of handling, a support plate may be used as in the apparatus shown in FIG.
また、第３図の実施例においては受光部１０
１，１０２，１０３，……は突出しているが、溝
Ｌによつて損傷の波及が阻止されるから、受光部
と、溝以外の集合体表面部分とを同一平面にして
も差支えない。 In addition, in the embodiment shown in FIG.
1, 102, 103, . . . protrude, but since the groove L prevents the damage from spreading, there is no problem even if the light receiving part and the surface of the assembly other than the groove are made on the same plane.
以上説明した本発明に係る赤外線検知装置は、
赤外線検知素子集合体とCTDとを一体化したこ
とによる利点、すなわち自己走査機能、小型化等
の利点をすべて保有し、さらに工程中において赤
外線検知素子の受光部に結晶欠陥、損傷等が発生
することを防止することができるため良好な性能
を実現することができる優れた利点がある。 The infrared detection device according to the present invention described above includes:
It has all the advantages of integrating the infrared sensing element assembly and the CTD, such as self-scanning function and miniaturization, but also avoids crystal defects and damage that occur in the light receiving part of the infrared sensing element during the process. This has an excellent advantage of being able to achieve good performance because it can prevent this from happening.
第１図は従来の赤外線検知装置の構造を示す要
部断面図、第２図は前図の一部拡大図、第３図は
本発明に係る赤外線検知装置の一実施例の構造を
示す要部断面図、第４図は前図中の赤外線検知素
子集合体の受光部側からみた平面図、第５図は第
３図中の赤外線検知素子集合体の受光部側と逆方
向から見た平面図である。
１：多元半導体薄板、２：陽極酸化膜、２０：
CTD、１０１，１０２，１０３，……：メサ状
受光部、J1，J2，J3，……：pn接合面、２２：
SiO2被膜、３０１，３０２，３０３，……：入
力ダイオード、Ｋ：結晶欠陥、６０１，６０２，
６０３，……：金属層、７０１，７０２，７０
３，……：金属バンプ、Ｄ：赤外線検知素子集合
体。
FIG. 1 is a cross-sectional view of a main part showing the structure of a conventional infrared detection device, FIG. 2 is a partially enlarged view of the previous figure, and FIG. 3 is a main part showing the structure of an embodiment of an infrared detection device according to the present invention. 4 is a plan view of the infrared sensing element assembly in the previous figure as seen from the light receiving part side, and Figure 5 is a plan view of the infrared sensing element assembly in Figure 3 seen from the opposite direction to the light receiving part side. FIG. 1: Multidimensional semiconductor thin plate, 2: Anodic oxide film, 20:
CTD, 101, 102, 103, ...: mesa-shaped light receiving section, J 1 , J 2 , J 3 , ...: pn junction surface, 22:
SiO 2 film, 301, 302, 303, ...: input diode, K: crystal defect, 601, 602,
603, ...: metal layer, 701, 702, 70
3,...: Metal bump, D: Infrared sensing element assembly.
Claims (1)
pn接合からなる複数の受光部１０１，１０２，
……および該受光部の上面から側面に延長する金
属層６０１，６０２，……が形成され、かつ受光
部どうしの中間に金属バンプ７０１，７０２，…
…を有する赤外線検知素子集合体Ｄの上記片側表
面上に電荷転送素子２０を重ねて該電荷転送素子
の入力ダイオード３０１，３０２，……の電極を
上記金属バンプに当接させ、該電極と金属バンプ
とを接着させて一体化したことを特徴とする赤外
線検知装置。 ２ 多元半導体薄板１の裏面に格子状パターンの
金属電極２００が設けられ、受光部１０１，１０
２，……の上記裏面への投影位置が上記格子状金
属電極によつて囲まれた個々の方形領域内にある
ことを特徴とする特許請求の範囲第１項に記載の
赤外線検知装置。[Claims] 1. On one side surface of a thin plate 1 made of a multi-component semiconductor,
A plurality of light receiving parts 101, 102 made of p-n junctions,
. . . and metal layers 601, 602, .
The charge transfer device 20 is superimposed on the one side surface of the infrared sensing element assembly D having ..., and the electrodes of the input diodes 301, 302, ... of the charge transfer device are brought into contact with the metal bumps, and the electrodes and the metal bumps are brought into contact with each other. An infrared detection device characterized by being integrated with a bump by bonding it together. 2. A grid pattern metal electrode 200 is provided on the back surface of the multi-component semiconductor thin plate 1, and the light receiving portions 101, 10
2. The infrared detecting device according to claim 1, wherein the projection positions of infrared rays 2, .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8120679A JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8120679A JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS566128A JPS566128A (en) | 1981-01-22 |
| JPS6222405B2 true JPS6222405B2 (en) | 1987-05-18 |
Family
ID=13740003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8120679A Granted JPS566128A (en) | 1979-06-26 | 1979-06-26 | Infrared-ray detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS566128A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5890769A (en) * | 1981-11-25 | 1983-05-30 | Mitsubishi Electric Corp | Laminated semiconductor device |
| JPS5973740A (en) * | 1982-10-19 | 1984-04-26 | Nippon Denso Co Ltd | Device for transducing chemical and physical quantity into electric quantity |
| JP4089033B2 (en) * | 1998-09-25 | 2008-05-21 | 松下電工株式会社 | Sensor |
-
1979
- 1979-06-26 JP JP8120679A patent/JPS566128A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS566128A (en) | 1981-01-22 |
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