JPS63244688A - Photovoltaic element - Google Patents
Photovoltaic elementInfo
- Publication number
- JPS63244688A JPS63244688A JP62078485A JP7848587A JPS63244688A JP S63244688 A JPS63244688 A JP S63244688A JP 62078485 A JP62078485 A JP 62078485A JP 7848587 A JP7848587 A JP 7848587A JP S63244688 A JPS63244688 A JP S63244688A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- visible light
- infrared
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000006243 chemical reaction Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- -1 lanthanum octafluoride Chemical compound 0.000 description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000801954 Karana Species 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、透光性受光゛面電極、半導体層、裏面電極
を有する光起電力素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a photovoltaic device having a light-transmitting light-receiving surface electrode, a semiconductor layer, and a back electrode.
一般に、ｐｎ接合の光起電力効果を利用した光起電力素
子はたとえば第６図または第７図に示すように構成され
ている。Generally, a photovoltaic element utilizing the photovoltaic effect of a pn junction is constructed as shown in FIG. 6 or 7, for example.
第６図はｐｉｎ構造の光起電力素子を示し、同図におい
て、（１）はガラス基板、（２）は基板（１）上に形成
されたインジウム酸化錫からなる透光性受光面電極、（
３）は受光面電極（２）上に形成されたｐ型半導体層、
（４）はｐ型半導体層（３）上に形成されたｎ型半導体
層、（５）はｎ型半導体層（４）上に形成されたｎ型半
導体層、（６）はｎ型半導体層（５）上に形成された裏
面電極であり、アルミニウム等の金属が蒸着されて形成
されている。FIG. 6 shows a photovoltaic element with a pin structure, in which (1) is a glass substrate, (2) is a light-transmitting light-receiving surface electrode made of indium tin oxide formed on the substrate (1), (
3) is a p-type semiconductor layer formed on the light-receiving surface electrode (2);
(4) is an n-type semiconductor layer formed on the p-type semiconductor layer (3), (5) is an n-type semiconductor layer formed on the n-type semiconductor layer (4), and (6) is an n-type semiconductor layer. (5) A back electrode formed on the top, which is formed by vapor-depositing metal such as aluminum.
つぎに、第７図はｐｉｎの２層構造の光起電力素子を示
し、同図において第６図と同一記号は同一のものを示し
、（７） 、 （８） 、 （９）はｎ型半導体層（５
）上に順次に形成されたｐ型半導体層、ｎ型半導体層お
よびｎ型半導体層、αＱはｎ型半導体層（９）上に形成
されたアルミニウム等からなる裏面電極である。Next, Fig. 7 shows a photovoltaic element with a two-layer structure of pins, in which the same symbols as in Fig. 6 indicate the same elements, and (7), (8), and (9) are n-type. Semiconductor layer (5
), a p-type semiconductor layer, an n-type semiconductor layer, and an n-type semiconductor layer are sequentially formed on the n-type semiconductor layer (9), and αQ is a back electrode made of aluminum or the like formed on the n-type semiconductor layer (9).
このとき、前記した第６図に示す光起電力素子の収集効
率スペクトルは第８図に示すようになり、第７図に示す
素子の場合も同様になり、はぼ５５０〜６００ ｎｍの
波長の入射光に対して収集効率が最大となり、可視光の
波長範囲において高い感度を示す。At this time, the collection efficiency spectrum of the photovoltaic device shown in FIG. 6 described above becomes as shown in FIG. 8, and the same is true for the device shown in FIG. 7. It has maximum collection efficiency for incident light and exhibits high sensitivity in the visible wavelength range.
しかし、ｓｏｏ ｎｍ以上の赤外領域の長波長の光が半
導体層（３）〜（５） 、 （７）〜（９）中で熱エネ
ルギに変化し、あるいは８００ ｎｍ以上の長波長の光
が半導体層（３）〜（５） 、 （７）〜（９）を透過
したのち、裏面電極（６）、α０で反射され、再び半導
体層（９）〜（７） 、 （５）〜（３）を逆方向に透
過して表面側へ散逸するため、８００ ｎｍ以上の長波
長の光を有効に光電変換に利用することができず、第８
図に示すように、ｓｏｏ ｎｍ以上の長波長の光に対す
る感度がほとんどなく、収集効率が極めて低くなり、素
子の出力電流の増大を図ることができないという問題点
がある。However, light with a long wavelength in the infrared region of soo nm or more is converted into thermal energy in the semiconductor layers (3) to (5), (7) to (9), or light with a long wavelength of 800 nm or more is converted into thermal energy. After passing through the semiconductor layers (3) to (5) and (7) to (9), it is reflected by the back electrode (6) and α0, and the semiconductor layers (9) to (7) and (5) to (3) are reflected again. ) is transmitted in the opposite direction and dissipated toward the surface, making it impossible to effectively utilize light with a long wavelength of 800 nm or more for photoelectric conversion,
As shown in the figure, there is a problem that there is almost no sensitivity to light with long wavelengths of soo nm or more, the collection efficiency is extremely low, and it is impossible to increase the output current of the device.
ところで、１６ ｔｈ ＩＥＥＥ Ｐｈｏｔｏｖｏ
ｌｔａｉｃ ８ｐｅｃｉａ −１ｉｓｔｓ Ｃｏｎｆ
ｅｒｅｎｃｅ −１９８２、ｐ、１４２１〜１４２２
において、アモルファスシリコン系の半導体層を有す
る光起電力素子の８ＱＯｎｍ前後の波長の光に対する感
度が、前記した第８図のように、急に低下することが報
告されている。By the way, 16th IEEE Photovo
ltaic 8pecia-1ists Conf
erence-1982, p, 1421-1422
It has been reported that the sensitivity of a photovoltaic element having an amorphous silicon semiconductor layer to light having a wavelength of around 8QOnm suddenly decreases as shown in FIG. 8 described above.
そこで、この発明では、ｇｏｏ ｎｍ以上の長波長の光
を光電変換に有効に利用して素子の出力電流の増大を図
ることを技術的課題とする。Therefore, the technical object of the present invention is to increase the output current of an element by effectively utilizing light with a long wavelength of 0.0 nm or more for photoelectric conversion.
この発明は、前記の点に留意してなされたものであり、
透光性受光面電極、半導体層、裏面電極を有する光起電
力素子において、赤外光を可視光に変換して出力する赤
外可視変換層を設けたことを特徴とする光起電力素子で
ある。This invention was made with the above points in mind,
A photovoltaic element having a light-transmitting light-receiving surface electrode, a semiconductor layer, and a back electrode, characterized in that it is provided with an infrared-visible conversion layer that converts infrared light into visible light and outputs it. be.
したがって、この発明によると、赤外光を可視光に変換
して出力する赤外可視変換層が設けられ、ｓｏｏ ｎｍ
以上の赤外領域の長波長の光が前記変換層により可視光
に変換され、変換層から出力される可視光が半導体層に
より吸収され、電子−正孔対の発生に有効に寄与して光
電変換に利用され、光起電力素子の出力電流の増大が図
れることになる。Therefore, according to the present invention, an infrared-visible conversion layer is provided that converts infrared light into visible light and outputs it.
The above-mentioned long wavelength light in the infrared region is converted into visible light by the conversion layer, and the visible light output from the conversion layer is absorbed by the semiconductor layer, effectively contributing to the generation of electron-hole pairs and photoelectrically generated. Utilized for conversion, it is possible to increase the output current of the photovoltaic element.
つぎに、この発明を、その実施例を示した第１図ないし
第５図とともに詳細に説明する。Next, the present invention will be explained in detail with reference to FIGS. 1 to 5 showing embodiments thereof.
（実施例１）
まず、実施例１を示した第１図および第２図について説
明する。(Example 1) First, FIG. 1 and FIG. 2 showing Example 1 will be explained.
第１図において、συはガラス基板、（イ）は基板Ｑη
上に形成されたインジウム酸化錫からなる透光性受光面
電極、備はグロー放電法により受光面電極＠上に形成さ
れたポロン（Ｂ）ドープのアモルファスシリコンカーバ
イド（ａ−８ｉＣ： Ｈ： Ｂ ）からなる厚さ１００
〜８００人のｐ型半導体層、α◆はグロー放電法により
ｐ型半導体＊Ｑ３上に形成されたノンドープのアモルフ
ァスシリコン（ａ−８ｉ：Ｈ）からなる厚さ５０００〜
５ｏｏｏ人のｉ型半導体層、（ト）は厚さ１００〜８０
０人のｎ型半導体層であり、リン（Ｐ）ドープのアモル
ファスシリコン（ａ−８ｉ ：Ｈ：Ｐ）カラナ’） 、
り０−放電法によりｉ型牛導体層α（上に形成されてい
る。In Figure 1, συ is the glass substrate, (a) is the substrate Qη
A light-transmitting light-receiving surface electrode made of indium tin oxide is formed on the light-transmitting light-receiving surface electrode, and poron (B)-doped amorphous silicon carbide (a-8iC: H: B) is formed on the light-receiving surface electrode by a glow discharge method. thickness 100
~800 p-type semiconductor layer, α◆ is made of non-doped amorphous silicon (a-8i:H) formed on p-type semiconductor *Q3 by glow discharge method and has a thickness of 5000~
5ooo i-type semiconductor layer, (g) thickness 100~80
0 n-type semiconductor layer, phosphorus (P) doped amorphous silicon (a-8i:H:P) Karana'),
The i-type conductor layer α (formed on top) was formed by the 0-discharge method.
α０はｎ型半導体層ＱＱ上に形成されインジウム酸化錫
からなる透光性導電膜、αηは導電膜ａＱ上に形成され
た赤外可視変換層であり、８フツ化ランタン（ＬａＦ３
）をイッテルビウム（ｙｂ）、エルビウム（Ｅｒ）によ
り付活した赤外可視変換螢光体（ＬａＦＢ ： Ｙｂ
：Ｅｒ）がエポキシ系透明樹脂に混合され、この混合材
料が導電膜α０上に塗布されて形成されている。α0 is a transparent conductive film made of indium tin oxide formed on the n-type semiconductor layer QQ, and αη is an infrared-visible conversion layer formed on the conductive film aQ.
) activated with ytterbium (yb) and erbium (Er) (LaFB: Yb)
:Er) is mixed with an epoxy-based transparent resin, and this mixed material is coated on the conductive film α0.
このとき、前記螢光体の量は２〜ａｌｌｌｄに設定され
ており、導電膜αりが一部露出する所定パターンに変換
層αηが形成されている。At this time, the amount of the phosphor is set to 2 to alld, and the conversion layer αη is formed in a predetermined pattern in which a portion of the conductive film α is exposed.
（ト）は変換層αη上および露出した導電膜α・上にア
ルミニウムが蒸着されて形成された裏面電極である。(g) is a back electrode formed by vapor-depositing aluminum on the conversion layer αη and the exposed conductive film α.
なお、グロー放電法による各半導体層α榎〜Ｑ５１の形
成条件はたとえば次表のように設定されている。Note that the conditions for forming each of the semiconductor layers α-Q51 by the glow discharge method are set as shown in the following table, for example.
表
そして、基板（ロ）、受光面電極（６）を介して各半導
体層（至）〜ａＩ１９に光が入射すると、入射光のうち
４００〜ｓｏｏｎｍの波長範囲の可視光成分は半導体層
ａ３〜（至）により吸収され、８００ ｎｍ以上の長波
長の赤外光成分は半導体層（２）〜（至）および導電膜
α０を透過して変換ＩＱηに入射し、変換層αηにより
可視光に変換されて裏面室Ｗ（至）トム鼻出力され、裏
面電極（至）により、変換層αηからの可視光が反射さ
れ、変換層０η、導電膜αＱを介して半導体層Ｑ５〜（
至）に入射し、半導体層（至）〜Ｑ３により変換層αη
からの可視光が吸収される。When light enters each semiconductor layer (to) to aI19 via the substrate (b) and the light-receiving surface electrode (6), the visible light component in the wavelength range of 400 to soon m is absorbed by the semiconductor layers a3 to aI19. The infrared light component with a long wavelength of 800 nm or more is absorbed by (to) and passes through the semiconductor layers (2) to (to) and the conductive film α0, enters the conversion IQη, and is converted into visible light by the conversion layer αη. Visible light from the conversion layer αη is reflected by the back electrode (to) and transmitted to the semiconductor layers Q5 to (
) and converts the conversion layer αη by the semiconductor layer (to) ~Q3.
visible light is absorbed.
従って、第１図の光起電力素子の収集効率スペクトルは
第２図中の実線に示すようになり、同図中に破線で示し
た前記第８図の従来の光起電力素子の収集効率スペクト
ルと比較してわかるように、８００〜１１００ ｎｍの
長波長の光に対しても感度を有することになり、これは
８００〜１１００ ｎｍの波長の赤外光が変換層αηに
より可視光に変換されて半導体層α目〜（２）により吸
収され、有効に光電変換に利用されるためであり、光起
電力素子の出力電流の増大を図ることが可能となり、素
子特性の向上を図ることができる。Therefore, the collection efficiency spectrum of the photovoltaic device shown in FIG. 1 is shown by the solid line in FIG. 2, and the collection efficiency spectrum of the conventional photovoltaic device shown in FIG. 8 is shown by the broken line in the same figure. As you can see, it is sensitive to light with a long wavelength of 800 to 1100 nm, and this is because infrared light with a wavelength of 800 to 1100 nm is converted into visible light by the conversion layer αη. This is because it is absorbed by the semiconductor layer α-th ~ (2) and effectively used for photoelectric conversion, making it possible to increase the output current of the photovoltaic device and improve the device characteristics. .
（実施例２） つぎに、実施例２を示す第３図について説明する。(Example 2) Next, FIG. 3 showing Example 2 will be explained.
第３図において、第１図と同一記号は同一〇ものもしく
は相当するものを示し、第１図と異なる点はｎ型半導体
層（至）と透光性導電膜αＱとの間に、ｐ型、ｉ型、ｎ
型半導体層（２）〜α＄それぞれと同じ材質のｐ型、ｉ
型、ｎ型半導体層α９．（イ）、＠を設けた点であり、
第８図の構成により、前記実施例Ｉと同等の効果が得ら
れる。In FIG. 3, the same symbols as in FIG. 1 indicate the same or equivalent items, and the difference from FIG. 1 is that there is a p type, i type, n
p type and i made of the same material as the type semiconductor layer (2) to α$, respectively.
type, n-type semiconductor layer α9. (b) The point is that @ is added.
With the configuration shown in FIG. 8, the same effect as in the embodiment I can be obtained.
（実施例８） さらに、実施例８を示した第４図について説明する。(Example 8) Furthermore, FIG. 4 showing Example 8 will be explained.
第４図において、第３図と同一記号は同一のものもしく
は相当するものを示し、第３図と異なる点は、ｎ型半導
体層ａ＄とｐ型半導体層αりとの間に、変換層αηと同
じ材質の赤外可視変換層にを包被したインジウム酸化錫
からなる透光性導電膜のを設け、ｎ型半導体層（社）上
にアルミニウムからなる裏面電極−を設けた点であり、
−前記実施例１と同等の効果が得られる。In FIG. 4, the same symbols as in FIG. 3 indicate the same or equivalent things, and the difference from FIG. 3 is that there is a conversion layer between the n-type semiconductor layer a and the p-type semiconductor layer α. A transparent conductive film made of indium tin oxide covered with an infrared-visible conversion layer made of the same material as αη is provided, and a back electrode made of aluminum is provided on the n-type semiconductor layer. ,
- Effects equivalent to those of Example 1 can be obtained.
（実施例４） また、実施例４を示した第５図について説明する。(Example 4) Further, FIG. 5 showing the fourth embodiment will be explained.
第５図において、第４図と同一記号は同一のものもしく
は相当するものを示し、第４図と異なる点は、ｎ型半導
体層（至）とｐ型牛導体冒Ｑ呻との間に、インジウム酸
化錫からなる透光性導電膜Ｇ、変換層（ロ）と同じ材質
の赤外可視変換＊Ｃ！ｌｉｌ、インジウム酸化錫からな
る透光性導電膜−を設けた点であり、−前記実施例１と
同等の効果が得られる。In FIG. 5, the same symbols as in FIG. 4 indicate the same or equivalent things, and the difference from FIG. 4 is that between the n-type semiconductor layer and the p-type conductor, Transparent conductive film G made of indium tin oxide, infrared-visible conversion made of the same material as the conversion layer (b) *C! This is because a light-transmitting conductive film made of indium tin oxide is provided, and the same effect as in Example 1 can be obtained.
なお、赤外可視変換層材料として、前記したようなＹｂ
、 Ｅｒにより付活した８フツ化ランタンのほか、Ｙ
ｂ、Ｅｒにより付活した８フツ化イツトリウム（ＹＦ３
、： Ｙｂ ： Ｅｒ ）などの螢光体や、Ｂａ２Ｎ
ａＮｂ６０ｔｓなどの非線形光学結晶材料等を用いても
、この発明を同様に実施することができる。In addition, as the infrared-visible conversion layer material, Yb as described above may be used.
, In addition to lanthanum octafluoride activated by Er, Y
b, Yttrium octafluoride (YF3) activated by Er
, :Yb:Er), Ba2N
The present invention can be similarly implemented using a nonlinear optical crystal material such as aNb60ts.
また、各半導体層の材質は、前記したアモルフ７７、シ
リコン系に限るものではない。Further, the material of each semiconductor layer is not limited to the above-mentioned Amorph 77 or silicon-based material.
さらに、半導体層はｐｉｎ構造に限らないのは勿論であ
る。Furthermore, it goes without saying that the semiconductor layer is not limited to the pin structure.
以上のように、この発明の光起電力素子によると、赤外
可視変換層を設けたため、ｓｏｏ ｎｍ以上の赤外領域
の長波長の光を可視光に変換して光電変換に有効に利用
することができ、光起電力素子の出力電流の増大を図る
ことができ、素子特性の向上を図ることが可能となり、
その効果は極めて大きい。As described above, according to the photovoltaic device of the present invention, since the infrared-visible conversion layer is provided, light with a long wavelength in the infrared region of so nm or more is converted into visible light and effectively used for photoelectric conversion. This makes it possible to increase the output current of the photovoltaic device and improve the device characteristics.
The effect is extremely large.
第１図ないし第５図はこの発明の光起電力素子゛の実施
例を示し、第１図は実施例１の構成図、第２図は実施例
１の収集効率スペクトルを示す図、第８図ないし第５図
はそれぞれ実施例２．実施例８、実施例４の構成図、第
６図および第７図はそれぞれ従来例の構成図、第８図は
従来例における収集効率スペクトルを示す図である。
（２）・・・透光性受光面電極、（至）〜αＱ、α呻〜
（社）・・・半導体層、αη、（支）、＠・・・赤外可
視変換層、（至）、＋２４１・・・裏面電極。1 to 5 show examples of the photovoltaic device of the present invention, FIG. 1 is a block diagram of Example 1, FIG. 2 is a diagram showing the collection efficiency spectrum of Example 1, and FIG. Figures 5 through 5 show Example 2, respectively. Embodiment 8 and Embodiment 4 are shown in block diagrams, FIGS. 6 and 7 are block diagrams of conventional examples, respectively, and FIG. 8 is a diagram showing a collection efficiency spectrum in the conventional example. (2) ... Transparent light-receiving surface electrode, (to) ~ αQ, α groan ~
(Company)... Semiconductor layer, αη, (support), @... Infrared-visible conversion layer, (to), +241... Back electrode.
Claims (1)
光起電力素子において、 赤外光を可視光に変換して出力する赤外可視変換層を設
けたことを特徴とする光起電力素子。(1) A photovoltaic element having a light-transmitting light-receiving surface electrode, a semiconductor layer, and a back electrode, which is characterized by being provided with an infrared-visible conversion layer that converts infrared light into visible light and outputs it. power element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078485A JP2664371B2 (en) | 1987-03-30 | 1987-03-30 | Photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078485A JP2664371B2 (en) | 1987-03-30 | 1987-03-30 | Photovoltaic element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244688A true JPS63244688A (en) | 1988-10-12 |
| JP2664371B2 JP2664371B2 (en) | 1997-10-15 |
Family
ID=13663286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62078485A Expired - Fee Related JP2664371B2 (en) | 1987-03-30 | 1987-03-30 | Photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2664371B2 (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001505448A (en) * | 1996-10-23 | 2001-04-24 | エベルハルト−カルルス−ウニバーシテート チュービンゲン ウニバーシテートクリニクム | Retinal transplant |
| WO2006006372A1 (en) * | 2004-07-07 | 2006-01-19 | Tohoku University | Solar cell panel |
| WO2009148131A1 (en) * | 2008-06-06 | 2009-12-10 | 住友ベークライト株式会社 | Wavelength converting composition and photovoltaic device comprising layer composed of wavelength converting composition |
| KR101030322B1 (en) * | 2008-05-28 | 2011-04-20 | (주)세현 | Method of manufacturing solar cell |
| KR101034473B1 (en) * | 2008-12-31 | 2011-05-17 | (주)세현 | Solar cell |
| CN102479832A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency (PCE) |
| CN102479833A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency and adjustable penetrating light |
| JP2015026684A (en) * | 2013-07-25 | 2015-02-05 | 京セラ株式会社 | Solar cell, solar cell module, and method for installing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5447380U (en) * | 1977-09-07 | 1979-04-02 | ||
| JPS6179546U (en) * | 1984-10-30 | 1986-05-27 | ||
| JPS63200576A (en) * | 1987-02-17 | 1988-08-18 | Hitachi Ltd | Solar cell |
-
1987
- 1987-03-30 JP JP62078485A patent/JP2664371B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5447380U (en) * | 1977-09-07 | 1979-04-02 | ||
| JPS6179546U (en) * | 1984-10-30 | 1986-05-27 | ||
| JPS63200576A (en) * | 1987-02-17 | 1988-08-18 | Hitachi Ltd | Solar cell |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001505448A (en) * | 1996-10-23 | 2001-04-24 | エベルハルト−カルルス−ウニバーシテート チュービンゲン ウニバーシテートクリニクム | Retinal transplant |
| WO2006006372A1 (en) * | 2004-07-07 | 2006-01-19 | Tohoku University | Solar cell panel |
| JP2006024716A (en) * | 2004-07-07 | 2006-01-26 | Tohoku Univ | Solar cell panel |
| KR101030322B1 (en) * | 2008-05-28 | 2011-04-20 | (주)세현 | Method of manufacturing solar cell |
| WO2009148131A1 (en) * | 2008-06-06 | 2009-12-10 | 住友ベークライト株式会社 | Wavelength converting composition and photovoltaic device comprising layer composed of wavelength converting composition |
| KR101034473B1 (en) * | 2008-12-31 | 2011-05-17 | (주)세현 | Solar cell |
| CN102479832A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency (PCE) |
| CN102479833A (en) * | 2010-11-24 | 2012-05-30 | 吉富新能源科技(上海)有限公司 | Solar cell with high photoelectric conversion efficiency and adjustable penetrating light |
| JP2015026684A (en) * | 2013-07-25 | 2015-02-05 | 京セラ株式会社 | Solar cell, solar cell module, and method for installing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2664371B2 (en) | 1997-10-15 |
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