JPS561579A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS561579A
JPS561579A JP7645179A JP7645179A JPS561579A JP S561579 A JPS561579 A JP S561579A JP 7645179 A JP7645179 A JP 7645179A JP 7645179 A JP7645179 A JP 7645179A JP S561579 A JPS561579 A JP S561579A
Authority
JP
Japan
Prior art keywords
semiconductor
electrode
type
diffused
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7645179A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7645179A priority Critical patent/JPS561579A/en
Publication of JPS561579A publication Critical patent/JPS561579A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To avoid the reduction of a lifetime for a semiconductor device by adding an impurity which has metallic properties in a single substance and becomes predetermined conducting type in a semiconductor under an electrode formed in a P-type or an N-type nonmonocrystalline semiconductor forming a P-N junction in a photoelectric element, a solar battery or the like. CONSTITUTION:A P-N junction is formed with a P-type semiconductor 11 and an N-type semiconductor 12, an electrode 11 is mounted at the end of the semiconductor 11, a confronting electrode 18 is mounted at the end of the semiconductor 12, a load resistor 13 is connected to the electrodes to form a photoelectric element or the like. In this configuration, a light 7 is radiated to the junction, Halls produced are diffused at the side of the semiconductor 11, and electrons are diffused to the side of the semiconductor 12 so as to obtain potential 14. In this configuration both the semiconductors 11 and 12 are formed of nonmonocrystalline semiconductor enabling high impurity density. In or the like is diffused under the electrode 17, and Sb or Te or the like is diffused under the electrode 18 in high density to produce degenerating regions 21 and 22. In this manner the recombination of the light excitation carrier in the long wavelength region is prevented.
JP7645179A 1979-06-18 1979-06-18 Semiconductor device Pending JPS561579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7645179A JPS561579A (en) 1979-06-18 1979-06-18 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7645179A JPS561579A (en) 1979-06-18 1979-06-18 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS561579A true JPS561579A (en) 1981-01-09

Family

ID=13605506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7645179A Pending JPS561579A (en) 1979-06-18 1979-06-18 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS561579A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58134482A (en) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol Photovoltaic device
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Photovoltaic device for increasing current
JPS58171657A (en) * 1982-03-31 1983-10-08 Murata Mfg Co Ltd Moisture sensitive resistor
JPS60169565U (en) * 1984-04-18 1985-11-11 旭化成株式会社 moisture sensing element
JPS6191553A (en) * 1984-10-11 1986-05-09 Japan Storage Battery Co Ltd Manufacture of humidity sensor
JPS6191554A (en) * 1984-10-11 1986-05-09 Japan Storage Battery Co Ltd Manufacture of humidity sensor
JPS61165651A (en) * 1984-08-28 1986-07-26 Sharp Corp Preparation of humidity-sensitive resistor element
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109275A (en) * 1976-12-22 1978-08-22 International Business Machines Corporation Interconnection of integrated circuit metallization

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4109275A (en) * 1976-12-22 1978-08-22 International Business Machines Corporation Interconnection of integrated circuit metallization

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58145171A (en) * 1981-12-14 1983-08-29 エナジー・コンバーション・デバイセス・インコーポレーテッド Photovoltaic device for increasing current
JPH0434314B2 (en) * 1981-12-14 1992-06-05 Enaajii Konbaajon Debaisesu Inc
JPS58134482A (en) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol Photovoltaic device
JPS6250069B2 (en) * 1982-02-05 1987-10-22 Kogyo Gijutsuin
JPS58171657A (en) * 1982-03-31 1983-10-08 Murata Mfg Co Ltd Moisture sensitive resistor
JPS60169565U (en) * 1984-04-18 1985-11-11 旭化成株式会社 moisture sensing element
JPS61165651A (en) * 1984-08-28 1986-07-26 Sharp Corp Preparation of humidity-sensitive resistor element
JPH0515982B2 (en) * 1984-08-28 1993-03-03 Sharp Kk
JPS6191553A (en) * 1984-10-11 1986-05-09 Japan Storage Battery Co Ltd Manufacture of humidity sensor
JPS6191554A (en) * 1984-10-11 1986-05-09 Japan Storage Battery Co Ltd Manufacture of humidity sensor
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects

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