JPS561579A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS561579A JPS561579A JP7645179A JP7645179A JPS561579A JP S561579 A JPS561579 A JP S561579A JP 7645179 A JP7645179 A JP 7645179A JP 7645179 A JP7645179 A JP 7645179A JP S561579 A JPS561579 A JP S561579A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electrode
- type
- diffused
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 12
- 239000012535 impurity Substances 0.000 abstract 2
- 230000005284 excitation Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
PURPOSE:To avoid the reduction of a lifetime for a semiconductor device by adding an impurity which has metallic properties in a single substance and becomes predetermined conducting type in a semiconductor under an electrode formed in a P-type or an N-type nonmonocrystalline semiconductor forming a P-N junction in a photoelectric element, a solar battery or the like. CONSTITUTION:A P-N junction is formed with a P-type semiconductor 11 and an N-type semiconductor 12, an electrode 11 is mounted at the end of the semiconductor 11, a confronting electrode 18 is mounted at the end of the semiconductor 12, a load resistor 13 is connected to the electrodes to form a photoelectric element or the like. In this configuration, a light 7 is radiated to the junction, Halls produced are diffused at the side of the semiconductor 11, and electrons are diffused to the side of the semiconductor 12 so as to obtain potential 14. In this configuration both the semiconductors 11 and 12 are formed of nonmonocrystalline semiconductor enabling high impurity density. In or the like is diffused under the electrode 17, and Sb or Te or the like is diffused under the electrode 18 in high density to produce degenerating regions 21 and 22. In this manner the recombination of the light excitation carrier in the long wavelength region is prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7645179A JPS561579A (en) | 1979-06-18 | 1979-06-18 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7645179A JPS561579A (en) | 1979-06-18 | 1979-06-18 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS561579A true JPS561579A (en) | 1981-01-09 |
Family
ID=13605506
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7645179A Pending JPS561579A (en) | 1979-06-18 | 1979-06-18 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS561579A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58134482A (en) * | 1982-02-05 | 1983-08-10 | Agency Of Ind Science & Technol | Photovoltaic device |
JPS58145171A (en) * | 1981-12-14 | 1983-08-29 | エナジー・コンバーション・デバイセス・インコーポレーテッド | Photovoltaic device for increasing current |
JPS58171657A (en) * | 1982-03-31 | 1983-10-08 | Murata Mfg Co Ltd | Moisture sensitive resistor |
JPS60169565U (en) * | 1984-04-18 | 1985-11-11 | 旭化成株式会社 | moisture sensing element |
JPS6191553A (en) * | 1984-10-11 | 1986-05-09 | Japan Storage Battery Co Ltd | Manufacture of humidity sensor |
JPS6191554A (en) * | 1984-10-11 | 1986-05-09 | Japan Storage Battery Co Ltd | Manufacture of humidity sensor |
JPS61165651A (en) * | 1984-08-28 | 1986-07-26 | Sharp Corp | Preparation of humidity-sensitive resistor element |
US5242505A (en) * | 1991-12-03 | 1993-09-07 | Electric Power Research Institute | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109275A (en) * | 1976-12-22 | 1978-08-22 | International Business Machines Corporation | Interconnection of integrated circuit metallization |
-
1979
- 1979-06-18 JP JP7645179A patent/JPS561579A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4109275A (en) * | 1976-12-22 | 1978-08-22 | International Business Machines Corporation | Interconnection of integrated circuit metallization |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58145171A (en) * | 1981-12-14 | 1983-08-29 | エナジー・コンバーション・デバイセス・インコーポレーテッド | Photovoltaic device for increasing current |
JPH0434314B2 (en) * | 1981-12-14 | 1992-06-05 | Enaajii Konbaajon Debaisesu Inc | |
JPS58134482A (en) * | 1982-02-05 | 1983-08-10 | Agency Of Ind Science & Technol | Photovoltaic device |
JPS6250069B2 (en) * | 1982-02-05 | 1987-10-22 | Kogyo Gijutsuin | |
JPS58171657A (en) * | 1982-03-31 | 1983-10-08 | Murata Mfg Co Ltd | Moisture sensitive resistor |
JPS60169565U (en) * | 1984-04-18 | 1985-11-11 | 旭化成株式会社 | moisture sensing element |
JPS61165651A (en) * | 1984-08-28 | 1986-07-26 | Sharp Corp | Preparation of humidity-sensitive resistor element |
JPH0515982B2 (en) * | 1984-08-28 | 1993-03-03 | Sharp Kk | |
JPS6191553A (en) * | 1984-10-11 | 1986-05-09 | Japan Storage Battery Co Ltd | Manufacture of humidity sensor |
JPS6191554A (en) * | 1984-10-11 | 1986-05-09 | Japan Storage Battery Co Ltd | Manufacture of humidity sensor |
US5242505A (en) * | 1991-12-03 | 1993-09-07 | Electric Power Research Institute | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
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