JPS5712571A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5712571A
JPS5712571A JP8732980A JP8732980A JPS5712571A JP S5712571 A JPS5712571 A JP S5712571A JP 8732980 A JP8732980 A JP 8732980A JP 8732980 A JP8732980 A JP 8732980A JP S5712571 A JPS5712571 A JP S5712571A
Authority
JP
Japan
Prior art keywords
layer
layers
type
recombined
type layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8732980A
Other languages
Japanese (ja)
Other versions
JPS646547B2 (en
Inventor
Takafumi Tsuji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8732980A priority Critical patent/JPS5712571A/en
Publication of JPS5712571A publication Critical patent/JPS5712571A/en
Publication of JPS646547B2 publication Critical patent/JPS646547B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To isolate surely between elements of a semiconductor photodetector by a method wherein electric field to go from depletion layers toward the surface and back face of a substrate to make carriers to be captured and recombined effectively, and flowing of the carriers in the adjoining elements is prevented. CONSTITUTION:The P<+> type layers 13 are provided at the prescribed interval on the surface of an N<-> type layer 12 on tghe P<+> type Si layer 11, an N<+> type layer 14 is formed to surround respectively the P<+> type layers 13, and concentration thereof is made as about 10 times of the N<-> type layer 12. Al electrodes 15, 16 are attached to the layers 13, 14, reverse bias VB is applied thereon through resistors, a Ti-Pt-Au electrode 17 is attached to the layer 11 and reverse bias VC is applied between the electrode 15. At this time, holes generated in depletion layers by absorb ing injecting light drift to the layers 11, 13, and holes generated in the N<-> type layer 12 at the middle part of both depletion layers reach either of the layer 11 or the layer 13 to be recombined, or diffuse in the holizontal direction to reach the N<+> type layer 14 and to be recombined. Accordingly signals to be applied to the respective elements are isolated nearly completely with each other, and the photodiode of array structure having extremely small crosstalk can be obtained.
JP8732980A 1980-06-27 1980-06-27 Semiconductor photodetector Granted JPS5712571A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8732980A JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8732980A JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Publications (2)

Publication Number Publication Date
JPS5712571A true JPS5712571A (en) 1982-01-22
JPS646547B2 JPS646547B2 (en) 1989-02-03

Family

ID=13911824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8732980A Granted JPS5712571A (en) 1980-06-27 1980-06-27 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5712571A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138529A (en) * 1984-07-31 1986-02-24 Shimadzu Corp Photodiode array sensor
JPS6166440U (en) * 1984-10-08 1986-05-07
JPS62232959A (en) * 1986-04-03 1987-10-13 Nissan Motor Co Ltd Semiconductor photodetector
US5196692A (en) * 1991-02-01 1993-03-23 Fujitsu Limited Photoelectric transducer switchable to a high-resolution or high-sensitivity mode
JPH11230784A (en) * 1998-02-12 1999-08-27 Hamamatsu Photonics Kk Optical encoder
JP2011052621A (en) * 2009-09-03 2011-03-17 Kyushu Power Service:Kk Geothermal power generator
CN102569310A (en) * 2010-12-31 2012-07-11 重庆鹰谷光电有限公司 Making method of silicon quadrant photoelectric detector without blind region and photoelectric crosstalk
US8534069B2 (en) 2008-08-05 2013-09-17 Michael J. Parrella Control system to manage and optimize a geothermal electric generation system from one or more wells that individually produce heat
US8616000B2 (en) 2008-06-13 2013-12-31 Michael J. Parrella System and method of capturing geothermal heat from within a drilled well to generate electricity
AU2012365103B2 (en) * 2012-01-10 2016-08-04 Japan New Energy Co., Ltd. Geothermal heat exchanger and geothermal power generation device
US9423158B2 (en) 2008-08-05 2016-08-23 Michael J. Parrella System and method of maximizing heat transfer at the bottom of a well using heat conductive components and a predictive model

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6138529A (en) * 1984-07-31 1986-02-24 Shimadzu Corp Photodiode array sensor
JPH0544968B2 (en) * 1984-07-31 1993-07-07 Shimadzu Corp
JPS6166440U (en) * 1984-10-08 1986-05-07
JPS62232959A (en) * 1986-04-03 1987-10-13 Nissan Motor Co Ltd Semiconductor photodetector
US5196692A (en) * 1991-02-01 1993-03-23 Fujitsu Limited Photoelectric transducer switchable to a high-resolution or high-sensitivity mode
JPH11230784A (en) * 1998-02-12 1999-08-27 Hamamatsu Photonics Kk Optical encoder
US8616000B2 (en) 2008-06-13 2013-12-31 Michael J. Parrella System and method of capturing geothermal heat from within a drilled well to generate electricity
US9404480B2 (en) 2008-06-13 2016-08-02 Pardev, Llc System and method of capturing geothermal heat from within a drilled well to generate electricity
US8534069B2 (en) 2008-08-05 2013-09-17 Michael J. Parrella Control system to manage and optimize a geothermal electric generation system from one or more wells that individually produce heat
US9423158B2 (en) 2008-08-05 2016-08-23 Michael J. Parrella System and method of maximizing heat transfer at the bottom of a well using heat conductive components and a predictive model
JP2011052621A (en) * 2009-09-03 2011-03-17 Kyushu Power Service:Kk Geothermal power generator
CN102569310A (en) * 2010-12-31 2012-07-11 重庆鹰谷光电有限公司 Making method of silicon quadrant photoelectric detector without blind region and photoelectric crosstalk
AU2012365103B2 (en) * 2012-01-10 2016-08-04 Japan New Energy Co., Ltd. Geothermal heat exchanger and geothermal power generation device

Also Published As

Publication number Publication date
JPS646547B2 (en) 1989-02-03

Similar Documents

Publication Publication Date Title
JPS5712571A (en) Semiconductor photodetector
JPS5793585A (en) Semiconductor photoreceiving element
JPS5448493A (en) Semiconductor optical device
JPS61139061A (en) Semiconductor photodetector
JPS5718372A (en) Semiconductor photoreceiving element
JPS6097681A (en) Monolithic integrated circuit
JPS6461964A (en) Semiconductor device
JPS57155784A (en) Photodiode
US4973935A (en) Infrared detector
JPS5513924A (en) Semiconductor photoelectronic conversion device
JPS57183076A (en) Field control type optical semiconductor device
JPS57199272A (en) Photogenerating elements
JPS5723281A (en) Semiconductor light-receiving element
JPS5632777A (en) Semiconductor photodetector
JPS5718373A (en) Semiconductor photoreceiving element
JPS57193073A (en) Semiconductor radioactive ray detector
JPS61105878A (en) Semiconductor light-receiving element
JPS56129364A (en) Complementary field effect transistor
JPS61226952A (en) Monolithic integrated light-receiving element
JPS5771189A (en) Light-receiving element
JPS6490569A (en) Photodetector
JPS55102276A (en) Semiconductor device
FR2396418A1 (en) INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION
JPS55124277A (en) Semiconductor photodetector
JPS57148381A (en) Semiconductor light-receiving device