JPS5723281A - Semiconductor light-receiving element - Google Patents
Semiconductor light-receiving elementInfo
- Publication number
- JPS5723281A JPS5723281A JP9853780A JP9853780A JPS5723281A JP S5723281 A JPS5723281 A JP S5723281A JP 9853780 A JP9853780 A JP 9853780A JP 9853780 A JP9853780 A JP 9853780A JP S5723281 A JPS5723281 A JP S5723281A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- gap
- substrate
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To obtain a light-receiving element consisting of a light waveguide and a light detector, both of them being united, by a method wherein on a semiconductor layer of one conductivity type, a layer of the same conductivity type and having an energy gap smaller than the semiconductor layer mentioned above is formed, the grading of the wave length to be divided is applied on the surface of the layer, and a region of the reverse conductivity type is formed on the whole or a part of the back side of the semiconductor layer. CONSTITUTION:On an n type In0.53Ga0.47As substrate 21 having an energy gap of 0.75eV. an n type 1nP layer 22 of 1.02 eV energey gap is grown and on the layer 22, an n type 1n0.78Ga0.22As0.52P0.48 layer 23 having a 1.02eV gap smaller than the gap of the layer 22 is grown, and on the layer 23 a plurality of gratings 24 having various grating wave length are formed. On the whole surface or the place directly beneath the gratings 24 respectively of the substrate 21, a plurality of p type 1n0.53 Ga0.47As layer 25 are formed by diffusion, and p type electrodes 26 are attached. To the substrate 21, n type electrodes 27 are attached.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9853780A JPS5723281A (en) | 1980-07-17 | 1980-07-17 | Semiconductor light-receiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9853780A JPS5723281A (en) | 1980-07-17 | 1980-07-17 | Semiconductor light-receiving element |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5723281A true JPS5723281A (en) | 1982-02-06 |
JPS6244711B2 JPS6244711B2 (en) | 1987-09-22 |
Family
ID=14222429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9853780A Granted JPS5723281A (en) | 1980-07-17 | 1980-07-17 | Semiconductor light-receiving element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5723281A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3814492A (en) * | 1972-11-20 | 1974-06-04 | Gen Motors Corp | Cantilever shelf assembly with pantography support arrangement for refrigerators |
US3814498A (en) * | 1972-05-04 | 1974-06-04 | Bell Telephone Labor Inc | Integrated optical circuit devices employing optical gratings |
JPS50159287A (en) * | 1974-06-12 | 1975-12-23 | ||
JPS5290283A (en) * | 1976-01-23 | 1977-07-29 | Anritsu Electric Co Ltd | Annular multiple wavelength light communication device |
JPS5549586U (en) * | 1978-09-29 | 1980-03-31 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4136254A (en) * | 1976-06-17 | 1979-01-23 | Schering Corporation | Process of selectively blocking amino functions in aminoglycosides using transition metal salts and intermediates used thereby |
-
1980
- 1980-07-17 JP JP9853780A patent/JPS5723281A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3814498A (en) * | 1972-05-04 | 1974-06-04 | Bell Telephone Labor Inc | Integrated optical circuit devices employing optical gratings |
US3814492A (en) * | 1972-11-20 | 1974-06-04 | Gen Motors Corp | Cantilever shelf assembly with pantography support arrangement for refrigerators |
JPS50159287A (en) * | 1974-06-12 | 1975-12-23 | ||
JPS5290283A (en) * | 1976-01-23 | 1977-07-29 | Anritsu Electric Co Ltd | Annular multiple wavelength light communication device |
JPS5549586U (en) * | 1978-09-29 | 1980-03-31 |
Also Published As
Publication number | Publication date |
---|---|
JPS6244711B2 (en) | 1987-09-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW359039B (en) | Circuit-integrating light-receiving element | |
FR2549642B1 (en) | SOLAR CELL | |
KR890004646B1 (en) | Semiconductor device | |
JPS5712571A (en) | Semiconductor photodetector | |
JPS5723281A (en) | Semiconductor light-receiving element | |
EP0090669A3 (en) | Electromagnetic radiation detector | |
JPS561318A (en) | Photoelectric conversion device | |
JPS57172778A (en) | Solar battery | |
JPS5792877A (en) | Photo-receiving semiconductor | |
JPS57143876A (en) | Photoelectric transducer | |
JPS57113292A (en) | Semiconductor light sensing device | |
US4157560A (en) | Photo detector cell | |
JPS57107082A (en) | Detector for infrared ray | |
JPS5522812A (en) | Semiconductor photodetector | |
JPS6461964A (en) | Semiconductor device | |
JPS56148874A (en) | Semiconductor photoelectric converter | |
JPS57183076A (en) | Field control type optical semiconductor device | |
DE3426226A1 (en) | UV-sensitive photoelement and method for the fabrication thereof | |
JPS647681A (en) | Distributed reflex semiconductor laser | |
JPS56103480A (en) | Photoconductive element | |
JPS53142886A (en) | Radiation detector of semiconductor | |
JPS56165370A (en) | Planar type semiconductor photoelectric converting element | |
JPS5389A (en) | Solid photo electric conversion element | |
JPS566125A (en) | Photoelectric transducer | |
JPS5580388A (en) | Semiconductor light emitting device |