FR2396418A1 - INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION - Google Patents

INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION

Info

Publication number
FR2396418A1
FR2396418A1 FR7819525A FR7819525A FR2396418A1 FR 2396418 A1 FR2396418 A1 FR 2396418A1 FR 7819525 A FR7819525 A FR 7819525A FR 7819525 A FR7819525 A FR 7819525A FR 2396418 A1 FR2396418 A1 FR 2396418A1
Authority
FR
France
Prior art keywords
encapsulation
semiconductor device
affected
device whose
integrated semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819525A
Other languages
French (fr)
Other versions
FR2396418B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP7662177A external-priority patent/JPS5412576A/en
Priority claimed from JP8359277A external-priority patent/JPS5419379A/en
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of FR2396418A1 publication Critical patent/FR2396418A1/en
Application granted granted Critical
Publication of FR2396418B1 publication Critical patent/FR2396418B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un dispositif à semi-conducteurs. Celui-ci comporte une couche résistante à conductivité de type p 12a et 12b qui est formée dans la surface principale de la face 511 ou 811 d'un substrat de silicium 11. La couche résistante possède des électrodes 17 à ses extrémités et est orientée suivant un axe cristallin écarté de 45 degrés par rapport à l'axe 011 afin de laisser passer du courant suivant son axe cristallin. Les caractéristiques électriques du dispositif de l'invention ne sont pas altérées par les contraintes mécaniques résultant de son encapsulage.A semiconductor device is disclosed. This comprises a p-type conductivity resistive layer 12a and 12b which is formed in the main surface of the face 511 or 811 of a silicon substrate 11. The resistive layer has electrodes 17 at its ends and is oriented along a crystalline axis spaced 45 degrees from the axis 011 in order to allow current to pass along its crystalline axis. The electrical characteristics of the device of the invention are not altered by the mechanical stresses resulting from its encapsulation.

FR7819525A 1977-06-29 1978-06-29 INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION Granted FR2396418A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7662177A JPS5412576A (en) 1977-06-29 1977-06-29 Semiconductor device
JP8359277A JPS5419379A (en) 1977-07-14 1977-07-14 Semiconductor device

Publications (2)

Publication Number Publication Date
FR2396418A1 true FR2396418A1 (en) 1979-01-26
FR2396418B1 FR2396418B1 (en) 1985-02-15

Family

ID=26417758

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819525A Granted FR2396418A1 (en) 1977-06-29 1978-06-29 INTEGRATED SEMICONDUCTOR DEVICE WHOSE CHARACTERISTICS ARE NOT AFFECTED BY THE ENCAPSULATION

Country Status (3)

Country Link
DE (1) DE2828607C3 (en)
FR (1) FR2396418A1 (en)
GB (1) GB2000638B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122134A (en) * 1980-02-29 1981-09-25 Toshiba Corp Resin-sealed type semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1951986A1 (en) * 1968-10-15 1970-04-16 Tokyo Shibaura Electric Co Semiconductor arrangement
FR2230083A1 (en) * 1973-05-18 1974-12-13 Philips Nv
FR2396417A1 (en) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co SEMICONDUCTOR COMPONENT INCLUDING A RESISTOR

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1465112A1 (en) * 1963-10-04 1969-01-23 Anritsu Electric Company Ltd Semiconductor layers deposited in a vacuum for elasto resistance elements
NL154867B (en) * 1964-02-13 1977-10-17 Hitachi Ltd PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE AS WELL AS MADE IN ACCORDANCE WITH THIS PROCEDURE, FIELD EFFECT TRANSISTOR AND PLANAR TRANSISTOR.
GB1249317A (en) * 1968-11-19 1971-10-13 Mullard Ltd Semiconductor devices
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1951986A1 (en) * 1968-10-15 1970-04-16 Tokyo Shibaura Electric Co Semiconductor arrangement
FR2230083A1 (en) * 1973-05-18 1974-12-13 Philips Nv
FR2396417A1 (en) * 1977-06-29 1979-01-26 Tokyo Shibaura Electric Co SEMICONDUCTOR COMPONENT INCLUDING A RESISTOR

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/66 *
EXBK/77 *

Also Published As

Publication number Publication date
DE2828607A1 (en) 1979-01-04
GB2000638B (en) 1982-01-20
DE2828607C3 (en) 1982-08-12
FR2396418B1 (en) 1985-02-15
DE2828607B2 (en) 1981-02-05
GB2000638A (en) 1979-01-10

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Legal Events

Date Code Title Description
CD Change of name or company name
ST Notification of lapse