JPS5386162A - Liquid phase crystal growth method - Google Patents

Liquid phase crystal growth method

Info

Publication number
JPS5386162A
JPS5386162A JP68377A JP68377A JPS5386162A JP S5386162 A JPS5386162 A JP S5386162A JP 68377 A JP68377 A JP 68377A JP 68377 A JP68377 A JP 68377A JP S5386162 A JPS5386162 A JP S5386162A
Authority
JP
Japan
Prior art keywords
liquid phase
crystal growth
growth method
phase crystal
growth promotion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP68377A
Other languages
Japanese (ja)
Other versions
JPS6112368B2 (en
Inventor
Yoichi Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP68377A priority Critical patent/JPS5386162A/en
Publication of JPS5386162A publication Critical patent/JPS5386162A/en
Publication of JPS6112368B2 publication Critical patent/JPS6112368B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To prevent contingent local adsorption of solute particles, and make a flat surface in which the undulated parts of growth promotion centers grow evenly and crystal bearing is defined by evenly forming the growth promotion centers over the entire crystal surface of a substrate.
COPYRIGHT: (C)1978,JPO&Japio
JP68377A 1977-01-06 1977-01-06 Liquid phase crystal growth method Granted JPS5386162A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP68377A JPS5386162A (en) 1977-01-06 1977-01-06 Liquid phase crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP68377A JPS5386162A (en) 1977-01-06 1977-01-06 Liquid phase crystal growth method

Publications (2)

Publication Number Publication Date
JPS5386162A true JPS5386162A (en) 1978-07-29
JPS6112368B2 JPS6112368B2 (en) 1986-04-08

Family

ID=11480549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP68377A Granted JPS5386162A (en) 1977-01-06 1977-01-06 Liquid phase crystal growth method

Country Status (1)

Country Link
JP (1) JPS5386162A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008239365A (en) * 2007-03-26 2008-10-09 Ngk Insulators Ltd Group iii metal nitride single crystal, method for manufacturing the same, and template substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5299792A (en) * 1976-02-18 1977-08-22 Agency Of Ind Science & Technol Production of semiconductor light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008239365A (en) * 2007-03-26 2008-10-09 Ngk Insulators Ltd Group iii metal nitride single crystal, method for manufacturing the same, and template substrate

Also Published As

Publication number Publication date
JPS6112368B2 (en) 1986-04-08

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