JPS5386162A - Liquid phase crystal growth method - Google Patents
Liquid phase crystal growth methodInfo
- Publication number
- JPS5386162A JPS5386162A JP68377A JP68377A JPS5386162A JP S5386162 A JPS5386162 A JP S5386162A JP 68377 A JP68377 A JP 68377A JP 68377 A JP68377 A JP 68377A JP S5386162 A JPS5386162 A JP S5386162A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- crystal growth
- growth method
- phase crystal
- growth promotion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent contingent local adsorption of solute particles, and make a flat surface in which the undulated parts of growth promotion centers grow evenly and crystal bearing is defined by evenly forming the growth promotion centers over the entire crystal surface of a substrate.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP68377A JPS5386162A (en) | 1977-01-06 | 1977-01-06 | Liquid phase crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP68377A JPS5386162A (en) | 1977-01-06 | 1977-01-06 | Liquid phase crystal growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5386162A true JPS5386162A (en) | 1978-07-29 |
JPS6112368B2 JPS6112368B2 (en) | 1986-04-08 |
Family
ID=11480549
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP68377A Granted JPS5386162A (en) | 1977-01-06 | 1977-01-06 | Liquid phase crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5386162A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008239365A (en) * | 2007-03-26 | 2008-10-09 | Ngk Insulators Ltd | Group iii metal nitride single crystal, method for manufacturing the same, and template substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5299792A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Production of semiconductor light emitting device |
-
1977
- 1977-01-06 JP JP68377A patent/JPS5386162A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5299792A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Production of semiconductor light emitting device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008239365A (en) * | 2007-03-26 | 2008-10-09 | Ngk Insulators Ltd | Group iii metal nitride single crystal, method for manufacturing the same, and template substrate |
Also Published As
Publication number | Publication date |
---|---|
JPS6112368B2 (en) | 1986-04-08 |
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