JPS52146567A - Production of semiconductor integrated circuits - Google Patents
Production of semiconductor integrated circuitsInfo
- Publication number
- JPS52146567A JPS52146567A JP6320376A JP6320376A JPS52146567A JP S52146567 A JPS52146567 A JP S52146567A JP 6320376 A JP6320376 A JP 6320376A JP 6320376 A JP6320376 A JP 6320376A JP S52146567 A JPS52146567 A JP S52146567A
- Authority
- JP
- Japan
- Prior art keywords
- production
- integrated circuits
- semiconductor integrated
- film
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the variation in the threshold voltages of Si gate MOS ICs and stabilize their characteristics by depositing a polycrystalline Si film on a gate oxide film then forming a N-implanted layer at their interface by an ion implantation method.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6320376A JPS52146567A (en) | 1976-05-31 | 1976-05-31 | Production of semiconductor integrated circuits |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6320376A JPS52146567A (en) | 1976-05-31 | 1976-05-31 | Production of semiconductor integrated circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52146567A true JPS52146567A (en) | 1977-12-06 |
Family
ID=13222406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6320376A Pending JPS52146567A (en) | 1976-05-31 | 1976-05-31 | Production of semiconductor integrated circuits |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52146567A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11204793A (en) * | 1997-10-24 | 1999-07-30 | Lsi Logic Corp | Electronic device gate oxide hardening method and semiconductor device |
JP2008103738A (en) * | 1993-09-02 | 2008-05-01 | Renesas Technology Corp | Semiconductor device and method of manufacturing the same |
-
1976
- 1976-05-31 JP JP6320376A patent/JPS52146567A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008103738A (en) * | 1993-09-02 | 2008-05-01 | Renesas Technology Corp | Semiconductor device and method of manufacturing the same |
JPH11204793A (en) * | 1997-10-24 | 1999-07-30 | Lsi Logic Corp | Electronic device gate oxide hardening method and semiconductor device |
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