JPS5355987A - Manufacture of silicon gate mos field effect type semiconductor device - Google Patents

Manufacture of silicon gate mos field effect type semiconductor device

Info

Publication number
JPS5355987A
JPS5355987A JP13087576A JP13087576A JPS5355987A JP S5355987 A JPS5355987 A JP S5355987A JP 13087576 A JP13087576 A JP 13087576A JP 13087576 A JP13087576 A JP 13087576A JP S5355987 A JPS5355987 A JP S5355987A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
type semiconductor
field effect
effect type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13087576A
Other languages
Japanese (ja)
Inventor
Koji Takemae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13087576A priority Critical patent/JPS5355987A/en
Publication of JPS5355987A publication Critical patent/JPS5355987A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a complete self-alignment structure by leaving the gate oxide film which remains on the surface of the P-type diffusion layer after formation of a gate electrode and P-type poly-crysta Si-layer for wiring. As a result, the threshold voltage is stabilized, and the under-cut is eliminated for the gate exide film, thus avoiding disconnection of the metal wiring.
COPYRIGHT: (C)1978,JPO&Japio
JP13087576A 1976-10-29 1976-10-29 Manufacture of silicon gate mos field effect type semiconductor device Pending JPS5355987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13087576A JPS5355987A (en) 1976-10-29 1976-10-29 Manufacture of silicon gate mos field effect type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13087576A JPS5355987A (en) 1976-10-29 1976-10-29 Manufacture of silicon gate mos field effect type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5355987A true JPS5355987A (en) 1978-05-20

Family

ID=15044725

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13087576A Pending JPS5355987A (en) 1976-10-29 1976-10-29 Manufacture of silicon gate mos field effect type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5355987A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193062A (en) * 1981-05-22 1982-11-27 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57193062A (en) * 1981-05-22 1982-11-27 Nec Corp Manufacture of semiconductor device

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