JPS5355987A - Manufacture of silicon gate mos field effect type semiconductor device - Google Patents
Manufacture of silicon gate mos field effect type semiconductor deviceInfo
- Publication number
- JPS5355987A JPS5355987A JP13087576A JP13087576A JPS5355987A JP S5355987 A JPS5355987 A JP S5355987A JP 13087576 A JP13087576 A JP 13087576A JP 13087576 A JP13087576 A JP 13087576A JP S5355987 A JPS5355987 A JP S5355987A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- type semiconductor
- field effect
- effect type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain a complete self-alignment structure by leaving the gate oxide film which remains on the surface of the P-type diffusion layer after formation of a gate electrode and P-type poly-crysta Si-layer for wiring. As a result, the threshold voltage is stabilized, and the under-cut is eliminated for the gate exide film, thus avoiding disconnection of the metal wiring.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13087576A JPS5355987A (en) | 1976-10-29 | 1976-10-29 | Manufacture of silicon gate mos field effect type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13087576A JPS5355987A (en) | 1976-10-29 | 1976-10-29 | Manufacture of silicon gate mos field effect type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5355987A true JPS5355987A (en) | 1978-05-20 |
Family
ID=15044725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13087576A Pending JPS5355987A (en) | 1976-10-29 | 1976-10-29 | Manufacture of silicon gate mos field effect type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5355987A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193062A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Manufacture of semiconductor device |
-
1976
- 1976-10-29 JP JP13087576A patent/JPS5355987A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193062A (en) * | 1981-05-22 | 1982-11-27 | Nec Corp | Manufacture of semiconductor device |
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