JPS5635463A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5635463A
JPS5635463A JP11035079A JP11035079A JPS5635463A JP S5635463 A JPS5635463 A JP S5635463A JP 11035079 A JP11035079 A JP 11035079A JP 11035079 A JP11035079 A JP 11035079A JP S5635463 A JPS5635463 A JP S5635463A
Authority
JP
Japan
Prior art keywords
subjunction
layer
type
junction
depletion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11035079A
Other languages
Japanese (ja)
Inventor
Kenichi Goto
Masafumi Miyagawa
Seiji Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11035079A priority Critical patent/JPS5635463A/en
Publication of JPS5635463A publication Critical patent/JPS5635463A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain high withstand voltage of the semiconductor device by forming subjunction surface on the peripheral region of a main junction surface thereof. CONSTITUTION:Annular grooves 51, 52 are formed on a P<+> type layer on an N type substrate, P<+> type layers 41, 42 are formed thereon, and main junction surface 11 and subjunction 12 are separate from each other Both the junction ends 11', 12', 12'' and groove inside surface are coated with protective films 31, 32 respectively. When the junction 11 is reversely biased, a depletion layer 61 is extended to thus reach the subjunction 12, and floating potential is inducted at the layer 42. Accordingly, a depletion layer 62 is newly formed on the N type layer on the periphery of the subjunction 12, a depletion width xd(L) is formed by the synthesis of the layers 61, 62, and surface electric field intensity can be weakened. Accordingly, the surface destructive voltage becomes increased. The withstand voltage thereof can be increased by suitably selecting the distance between the junctions 11 and 12, increasing the subjunctions, and allowing each depletion layer to interfere with each other to increase the width xd(L).
JP11035079A 1979-08-31 1979-08-31 Semiconductor device Pending JPS5635463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11035079A JPS5635463A (en) 1979-08-31 1979-08-31 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11035079A JPS5635463A (en) 1979-08-31 1979-08-31 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5635463A true JPS5635463A (en) 1981-04-08

Family

ID=14533528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11035079A Pending JPS5635463A (en) 1979-08-31 1979-08-31 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5635463A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003372A (en) * 1988-06-16 1991-03-26 Hyundai Electronics Industries Co., Ltd. High breakdown voltage semiconductor device
JP2010219224A (en) * 2009-03-16 2010-09-30 Toshiba Corp Power semiconductor device
JP2012069961A (en) * 2011-10-18 2012-04-05 Toshiba Corp Power semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5003372A (en) * 1988-06-16 1991-03-26 Hyundai Electronics Industries Co., Ltd. High breakdown voltage semiconductor device
JP2010219224A (en) * 2009-03-16 2010-09-30 Toshiba Corp Power semiconductor device
US8232593B2 (en) 2009-03-16 2012-07-31 Kabushiki Kaisha Toshiba Power semiconductor device
JP2012069961A (en) * 2011-10-18 2012-04-05 Toshiba Corp Power semiconductor device

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