JPS5575263A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5575263A
JPS5575263A JP14913378A JP14913378A JPS5575263A JP S5575263 A JPS5575263 A JP S5575263A JP 14913378 A JP14913378 A JP 14913378A JP 14913378 A JP14913378 A JP 14913378A JP S5575263 A JPS5575263 A JP S5575263A
Authority
JP
Japan
Prior art keywords
recess
dielectric strength
glass
junction
dimension
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14913378A
Other languages
Japanese (ja)
Other versions
JPS5936833B2 (en
Inventor
Masayoshi Sugiyama
Hideyuki Yagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14913378A priority Critical patent/JPS5936833B2/en
Publication of JPS5575263A publication Critical patent/JPS5575263A/en
Publication of JPS5936833B2 publication Critical patent/JPS5936833B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To raise a dielectric strength, by terminating a junction which gives a forward dielectric strength in the main, in a prescribed position at the bottom of a recess which is provided on a main surface and filled with a prescribed glass. CONSTITUTION:PE, NB, PB, NE layers 11-14 are laminated with one another. Junctions J1-J3 are provided. A recess 5 and an n-type channel stopper 15 are provided on a main surface. A ZnO-B2O3-SiO2 series glass 6 is filled in the recess 5. Negative charge is set on the surface of the glass. A dimension W1 on the bottom of the recess 5 outside the end of the junction J2 is made larger than the thickness d of the NB layer. The surface of a substrate is coated with an SiO<2> film which has positive charge. A depletion layer produced in the NB layer, which gives a forward dielectric strength, extends horizontally due to the negative charge in the glass. This results in preventing the concentration of electric field on the bottom of the recess and raising the dielectric strength. Since the dimension W1 is larger than the thickness d, the maximum intensity of electric field on the channel stopper 15 is higher than in the bulk. A backward dielectric strength is given by the junction J1 in the main. In that case, another dimension W2 is made not smaller than d/3.
JP14913378A 1978-12-04 1978-12-04 semiconductor equipment Expired JPS5936833B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14913378A JPS5936833B2 (en) 1978-12-04 1978-12-04 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14913378A JPS5936833B2 (en) 1978-12-04 1978-12-04 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5575263A true JPS5575263A (en) 1980-06-06
JPS5936833B2 JPS5936833B2 (en) 1984-09-06

Family

ID=15468451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14913378A Expired JPS5936833B2 (en) 1978-12-04 1978-12-04 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5936833B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726444A (en) * 1980-07-24 1982-02-12 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor element
JPS57196570A (en) * 1981-05-28 1982-12-02 Toshiba Corp Thyristor
JPS63205955A (en) * 1987-02-21 1988-08-25 Nec Corp Planar type high breakdown-voltage thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4799943A (en) * 1987-06-17 1989-01-24 Giambattista Giusti Gas stream diffusing and distribution apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5726444A (en) * 1980-07-24 1982-02-12 Internatl Rectifier Corp Japan Ltd Manufacture of semiconductor element
JPS57196570A (en) * 1981-05-28 1982-12-02 Toshiba Corp Thyristor
JPS63205955A (en) * 1987-02-21 1988-08-25 Nec Corp Planar type high breakdown-voltage thyristor

Also Published As

Publication number Publication date
JPS5936833B2 (en) 1984-09-06

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