JPS54122983A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS54122983A
JPS54122983A JP2989178A JP2989178A JPS54122983A JP S54122983 A JPS54122983 A JP S54122983A JP 2989178 A JP2989178 A JP 2989178A JP 2989178 A JP2989178 A JP 2989178A JP S54122983 A JPS54122983 A JP S54122983A
Authority
JP
Japan
Prior art keywords
electrode
dielectric
anode electrode
cathode electrode
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2989178A
Other languages
Japanese (ja)
Other versions
JPS6321347B2 (en
Inventor
Yoshikazu Hosokawa
Tatsuya Kamei
Takuzo Ogawa
Kotaro Kato
Tetsuya Takayashiki
Norio Totsuka
Jun Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Hitachi Ltd
Priority to JP2989178A priority Critical patent/JPS54122983A/en
Publication of JPS54122983A publication Critical patent/JPS54122983A/en
Publication of JPS6321347B2 publication Critical patent/JPS6321347B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To increase the dielectric strength of lateral type thyristors having three terminals or the like, by forming the electrodes while extending the exposed end of PN junction via the dielectric substance film, in bonding the electrods on the diffusion region placed in the island region of the semiconductor substrate.
CONSTITUTION: In forming the anode electrode 10 and the gate electrode 11 on the three terminal lateral type semiconductor elements such as thyristors, they are bonded on the surface stable film 9 while extending them in excess of the PN junctions J1 to J3 produced with the diffusion region of element. Further, since the cathode electrode 12 has no restriction for the side not opposing to the anode electrode 10, it can freely be extended. Next, the gate electrode 11 is drawn out from the oppoite side of the anode electrode 10 by taking the cathode electrode as the center, and the dielectric strength is increased by extneding the space charge region 13 through the placement of the insulation distance with the cathode electrode 12 to the opposite side of the electrode 10. Further, it is titled to the dielectric film 3 implanting the PN junction J3 caused at the regions 6 and 8 to cause bevel construction.
COPYRIGHT: (C)1979,JPO&Japio
JP2989178A 1978-03-17 1978-03-17 Semiconductor integrated circuit Granted JPS54122983A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2989178A JPS54122983A (en) 1978-03-17 1978-03-17 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2989178A JPS54122983A (en) 1978-03-17 1978-03-17 Semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS54122983A true JPS54122983A (en) 1979-09-22
JPS6321347B2 JPS6321347B2 (en) 1988-05-06

Family

ID=12288583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2989178A Granted JPS54122983A (en) 1978-03-17 1978-03-17 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS54122983A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102549A (en) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor ic
EP0104454A2 (en) * 1982-08-27 1984-04-04 Hitachi, Ltd. Semiconductor device with field plate
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type p-n-p-n element
JPS6297374A (en) * 1985-10-23 1987-05-06 Toko Inc High withstanding voltage semiconductor device
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
JPS49127576A (en) * 1973-04-05 1974-12-06
JPS5146880A (en) * 1974-10-18 1976-04-21 Matsushita Electronics Corp TORANJISUTA
JPS5275979A (en) * 1975-12-22 1977-06-25 Toshiba Corp Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405329A (en) * 1964-04-16 1968-10-08 Northern Electric Co Semiconductor devices
JPS49127576A (en) * 1973-04-05 1974-12-06
JPS5146880A (en) * 1974-10-18 1976-04-21 Matsushita Electronics Corp TORANJISUTA
JPS5275979A (en) * 1975-12-22 1977-06-25 Toshiba Corp Semiconductor device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102549A (en) * 1981-12-14 1983-06-18 Nippon Telegr & Teleph Corp <Ntt> Semiconductor ic
JPH0363221B2 (en) * 1981-12-14 1991-09-30 Nippon Denshin Denwa Kk
EP0104454A2 (en) * 1982-08-27 1984-04-04 Hitachi, Ltd. Semiconductor device with field plate
US4654691A (en) * 1982-08-27 1987-03-31 Hitachi, Ltd. Semiconductor device with field plate
JPS61102064A (en) * 1984-10-25 1986-05-20 Nec Corp Lateral type p-n-p-n element
JPS6297374A (en) * 1985-10-23 1987-05-06 Toko Inc High withstanding voltage semiconductor device
US5278076A (en) * 1990-02-28 1994-01-11 At&T Bell Laboratories Method of marking a lateral mos controlled thyristor

Also Published As

Publication number Publication date
JPS6321347B2 (en) 1988-05-06

Similar Documents

Publication Publication Date Title
JPS5742161A (en) Semiconductor and production thereof
JPS54157092A (en) Semiconductor integrated circuit device
JPS5563840A (en) Semiconductor integrated device
JPS5498521A (en) Solidstate pick up element
JPS56162864A (en) Semiconductor device
JPS54122983A (en) Semiconductor integrated circuit
JPS5753944A (en) Semiconductor integrated circuit
JPS54154966A (en) Semiconductor electron device
JPS54129887A (en) Semiconductor integrated circuit
JPS5588366A (en) Semiconductor device
JPS54102980A (en) Mos-type semiconductor device and its manufacture
JPS54154281A (en) Bipolar semiconductor device and its manufacture
JPS5640277A (en) Semiconductor device
JPS55108771A (en) Semiconductor device
JPS54126462A (en) Production of semiconductor device
JPS56158466A (en) Semiconductor device
JPS5582515A (en) Transistor amplifier
JPS5778181A (en) Semiconductor variable capacity element
JPS5339073A (en) Semiconductor device
JPS551158A (en) Semiconductor device
JPS5486288A (en) Manufacture of semiconductor
JPS5797668A (en) Semiconductor device
JPS5582459A (en) Transistor
JPS5470780A (en) Semicoductor capacity device
JPS5496975A (en) Semiconductor device