JPS5613769A - Charge-coupled device - Google Patents

Charge-coupled device

Info

Publication number
JPS5613769A
JPS5613769A JP8830579A JP8830579A JPS5613769A JP S5613769 A JPS5613769 A JP S5613769A JP 8830579 A JP8830579 A JP 8830579A JP 8830579 A JP8830579 A JP 8830579A JP S5613769 A JPS5613769 A JP S5613769A
Authority
JP
Japan
Prior art keywords
cavities
substrate
charge
film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8830579A
Other languages
Japanese (ja)
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8830579A priority Critical patent/JPS5613769A/en
Publication of JPS5613769A publication Critical patent/JPS5613769A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain a charge-coupled device having an excellent charge-transfer characteristic together with a larger-scale integration by making a plurality of square openings in the field oxide film provided on a semiconductor substrate, etching the substrate to form cavities by using the oxide film as a mask, and burying a transfer electrode in each of the cavities through a thin oxide-film. CONSTITUTION:The surface of a P-type Si substrate 1 is coated with a field oxide film 20, which is selectively etched to provide a plurality of square openings aligned on a straight line. Then the substrate 1 is etched by using the film 20 left as a mask to remove the portion of the substrate 1 exposed in the openings in order to form a plurality of square cavities 11-16. After that, the side wall and bottom of the cavities are coated with thin oxide films 21-26, through which conductor films 31-36, i.e. transfer electrodes, are buried in the cavities 11-16 projecting the upper surfaces to form embedded CCD. Said procedure permits the amount of the stored charge to increase and all charges to be transferred without any charge remaining.
JP8830579A 1979-07-13 1979-07-13 Charge-coupled device Pending JPS5613769A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8830579A JPS5613769A (en) 1979-07-13 1979-07-13 Charge-coupled device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8830579A JPS5613769A (en) 1979-07-13 1979-07-13 Charge-coupled device

Publications (1)

Publication Number Publication Date
JPS5613769A true JPS5613769A (en) 1981-02-10

Family

ID=13939211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8830579A Pending JPS5613769A (en) 1979-07-13 1979-07-13 Charge-coupled device

Country Status (1)

Country Link
JP (1) JPS5613769A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
EP1064683A1 (en) * 1998-03-16 2001-01-03 Photon Vision Systems, L.L.C Photo receptor comprising a trench capacitor
FR2947382A1 (en) * 2009-06-24 2010-12-31 St Microelectronics Sas IMAGE SENSOR WITH TRANSFER OF TWO PHASE LOADS.
US8643063B2 (en) 2009-06-24 2014-02-04 Stmicroelectronics (Crolles 2) Sas Multidirectional two-phase charge-coupled device
US8716760B2 (en) 2009-06-24 2014-05-06 Stmicroelectronics (Crolles 2) Sas Photosensitive charge-coupled device comprising vertical electrodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160181A (en) * 1978-06-09 1979-12-18 Pioneer Electronic Corp Charge transfer device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54160181A (en) * 1978-06-09 1979-12-18 Pioneer Electronic Corp Charge transfer device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device
US5173756A (en) * 1990-01-05 1992-12-22 International Business Machines Corporation Trench charge-coupled device
US5334868A (en) * 1991-02-08 1994-08-02 International Business Machines Corporation Sidewall charge-coupled device with trench isolation
EP1064683A1 (en) * 1998-03-16 2001-01-03 Photon Vision Systems, L.L.C Photo receptor comprising a trench capacitor
FR2947382A1 (en) * 2009-06-24 2010-12-31 St Microelectronics Sas IMAGE SENSOR WITH TRANSFER OF TWO PHASE LOADS.
US8643063B2 (en) 2009-06-24 2014-02-04 Stmicroelectronics (Crolles 2) Sas Multidirectional two-phase charge-coupled device
US8716760B2 (en) 2009-06-24 2014-05-06 Stmicroelectronics (Crolles 2) Sas Photosensitive charge-coupled device comprising vertical electrodes
US8937341B2 (en) 2009-06-24 2015-01-20 STMicrelectronics (Crolles 2) SAS Two-phase charge-coupled device

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