JPS56111260A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS56111260A
JPS56111260A JP1418780A JP1418780A JPS56111260A JP S56111260 A JPS56111260 A JP S56111260A JP 1418780 A JP1418780 A JP 1418780A JP 1418780 A JP1418780 A JP 1418780A JP S56111260 A JPS56111260 A JP S56111260A
Authority
JP
Japan
Prior art keywords
gate electrodes
gate
film
electrodes
row
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1418780A
Other languages
Japanese (ja)
Other versions
JPS648473B2 (en
Inventor
Junji Sakurai
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1418780A priority Critical patent/JPS56111260A/en
Publication of JPS56111260A publication Critical patent/JPS56111260A/en
Publication of JPS648473B2 publication Critical patent/JPS648473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices

Abstract

PURPOSE:To heighten the isolation voltage between the gate electrodes and obtain a flat surface of the device, by aligning polycrystalline gate electrodes on a gate oxide film in a row with minimum intervals. CONSTITUTION:A gate SiO2 film 2 is formed on a Si substrate 1. On the film 2 the polycrystalline Si gate electrodes 3 are formed in a row with an interval smaller than the thickness of the electrode 3. Each interval between the electrodes 3 is filled with SiO2 layer 4'. With such an arrangement, the isolation voltage between the gate electrodes can be maintained at an extreme high level. Moreover the roughness on surface of the device is considerably decreased. Thus the disconnection of the metallic wiring layer formed on the surface of the device can be prevented.
JP1418780A 1980-02-07 1980-02-07 Charge transfer element Granted JPS56111260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1418780A JPS56111260A (en) 1980-02-07 1980-02-07 Charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1418780A JPS56111260A (en) 1980-02-07 1980-02-07 Charge transfer element

Publications (2)

Publication Number Publication Date
JPS56111260A true JPS56111260A (en) 1981-09-02
JPS648473B2 JPS648473B2 (en) 1989-02-14

Family

ID=11854115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1418780A Granted JPS56111260A (en) 1980-02-07 1980-02-07 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS56111260A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519582A (en) * 1974-07-13 1976-01-26 Oki Electric Ind Co Ltd
JPS5150964U (en) * 1974-10-16 1976-04-17
JPS52155070A (en) * 1976-06-18 1977-12-23 Matsushita Electric Ind Co Ltd Production of ccd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS519582A (en) * 1974-07-13 1976-01-26 Oki Electric Ind Co Ltd
JPS5150964U (en) * 1974-10-16 1976-04-17
JPS52155070A (en) * 1976-06-18 1977-12-23 Matsushita Electric Ind Co Ltd Production of ccd

Also Published As

Publication number Publication date
JPS648473B2 (en) 1989-02-14

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