JPS57196572A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57196572A
JPS57196572A JP8153581A JP8153581A JPS57196572A JP S57196572 A JPS57196572 A JP S57196572A JP 8153581 A JP8153581 A JP 8153581A JP 8153581 A JP8153581 A JP 8153581A JP S57196572 A JPS57196572 A JP S57196572A
Authority
JP
Japan
Prior art keywords
unstable state
sio2 film
gate
electrode
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8153581A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Kobayashi
Yoshio Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP8153581A priority Critical patent/JPS57196572A/en
Publication of JPS57196572A publication Critical patent/JPS57196572A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To effectively remove unstable state of the charateristics of the titled device by a method wherein the electric charge applied from the side of an Si gate electrove is blocked by the Si oxide interposed between an Si electrode and an Si3N4 layer. CONSTITUTION:An insulating layer of multilayer structure, whereon an SiO2 film 2, an Si3N4 layer 3, and a thick SiO2 film 7, were successively coated, is formed on a substrate 1 and a silicon electrode 4 is formed on the above. Through these procedures, the unstable state of characteristics of the two-phase clock type charge transfer device with an insulating gate can be removed effictively.
JP8153581A 1981-05-28 1981-05-28 Semiconductor device Pending JPS57196572A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8153581A JPS57196572A (en) 1981-05-28 1981-05-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8153581A JPS57196572A (en) 1981-05-28 1981-05-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57196572A true JPS57196572A (en) 1982-12-02

Family

ID=13748994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8153581A Pending JPS57196572A (en) 1981-05-28 1981-05-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57196572A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273314A (en) * 1993-01-14 1995-10-20 Samsung Electron Co Ltd Electric charge transmitting device and switching device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826477A (en) * 1971-08-10 1973-04-07
JPS4911080A (en) * 1972-05-26 1974-01-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826477A (en) * 1971-08-10 1973-04-07
JPS4911080A (en) * 1972-05-26 1974-01-31

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07273314A (en) * 1993-01-14 1995-10-20 Samsung Electron Co Ltd Electric charge transmitting device and switching device

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