JPS574161A - Coupling element for charge - Google Patents
Coupling element for chargeInfo
- Publication number
- JPS574161A JPS574161A JP7798880A JP7798880A JPS574161A JP S574161 A JPS574161 A JP S574161A JP 7798880 A JP7798880 A JP 7798880A JP 7798880 A JP7798880 A JP 7798880A JP S574161 A JPS574161 A JP S574161A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- electrodes
- concentration
- charges
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000008878 coupling Effects 0.000 title 1
- 238000010168 coupling process Methods 0.000 title 1
- 238000005859 coupling reaction Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To determine the transfer direction of charges unidirectionally by a simple two-phase clock drive type by a method wherein the first and the second dielectric layers are formed on the surface of a semiconductor substrate, and a plurality of conductor electrodes are arranged on the surface at regular intervals. CONSTITUTION:A thermally oxidized SiO2 layer 12 is formed on the surface of the P type Si substrate 11, and an Si3N4 layer 13 is made up on the layer 12. A plurality of Al electrodes 14 are disposed adjacently on the surface of the layer 13. Each electrode 14 is wired to terminals 16 by wiring 15. In such constitution, electrons in the substrate 11 are trapped on the interface of the layer 12 and the layer 13 or in the layer 13 through the layer 12 when not less than 20V positive pulses to the substrate 11 are applied to the terminals 16. Accordingly, the concentration of holes in the vicinity of the surface of the substrate 11 under the electrodes 14 becomes higher than the concentration of holes in the substrate 11. The difference of the concentration of electrons in the vicinity of the surface of or in the substrate 11 under the electrodes 14 is made differ successively by increasing or decreasing the amount of charges injected and held in order according to the arrangement of the electrodes 14. Thus, the transfer direction of charges is determined in two-phase clock drive.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7798880A JPS574161A (en) | 1980-06-10 | 1980-06-10 | Coupling element for charge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7798880A JPS574161A (en) | 1980-06-10 | 1980-06-10 | Coupling element for charge |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574161A true JPS574161A (en) | 1982-01-09 |
Family
ID=13649217
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7798880A Pending JPS574161A (en) | 1980-06-10 | 1980-06-10 | Coupling element for charge |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574161A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5382829A (en) * | 1992-07-21 | 1995-01-17 | Mitsubishi Denki Kabushiki Kaisha | Packaged microwave semiconductor device |
| US5452182A (en) * | 1990-04-05 | 1995-09-19 | Martin Marietta Corporation | Flexible high density interconnect structure and flexibly interconnected system |
-
1980
- 1980-06-10 JP JP7798880A patent/JPS574161A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5452182A (en) * | 1990-04-05 | 1995-09-19 | Martin Marietta Corporation | Flexible high density interconnect structure and flexibly interconnected system |
| US5382829A (en) * | 1992-07-21 | 1995-01-17 | Mitsubishi Denki Kabushiki Kaisha | Packaged microwave semiconductor device |
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