JPS5591169A - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPS5591169A JPS5591169A JP16319978A JP16319978A JPS5591169A JP S5591169 A JPS5591169 A JP S5591169A JP 16319978 A JP16319978 A JP 16319978A JP 16319978 A JP16319978 A JP 16319978A JP S5591169 A JPS5591169 A JP S5591169A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- charge
- electrodes
- transfer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To drive charge by a clock and to transfer the charge under first electrode to next stage by providing second transfer electrode group insulated between electrode group forming potential wells having potential gradient for accelerating the charge in transfer direction. CONSTITUTION:A plurality of resistive electrodes 24 are arranged through an oxide film 23 in an n-type layer 22 on a p-type silicon substrate 21. The electrode 24 is a low density polycrystalline silicon layer and has high density electrodes 25a, 25b at both ends thereof. An aluminum electrode 25 is provided to be insulated between the electrodes 24 to thereby form a storage electrode 27. A layer 28 is an output gate electrode. A p-type layer 29 is formed at one side on the surface of the n-type layer 22 under the electrodes 26, 27 to thereby form a potential barrier for preventing charge from flowing. A DC low level voltage is applied to the electrode 25a, and a DC high level voltage is applied to the electrode 25b. A clock pulse is applied to the electrode 26, and predetermined pulse is applied to the electrode 27. With this configuration potential gradient for accelerating the charge Q in its transfer direction is formed under the respective electrodes 24. Thus, the time for transferring the charge at a distance L when the electrodes 24 have N stages is 1/N of the conventional time to thereby realize a simple drive system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16319978A JPS5591169A (en) | 1978-12-27 | 1978-12-27 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16319978A JPS5591169A (en) | 1978-12-27 | 1978-12-27 | Charge transfer device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5591169A true JPS5591169A (en) | 1980-07-10 |
Family
ID=15769152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16319978A Pending JPS5591169A (en) | 1978-12-27 | 1978-12-27 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5591169A (en) |
-
1978
- 1978-12-27 JP JP16319978A patent/JPS5591169A/en active Pending
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