GB1395558A - Charge-coupled circuits - Google Patents

Charge-coupled circuits

Info

Publication number
GB1395558A
GB1395558A GB3817172A GB3817172A GB1395558A GB 1395558 A GB1395558 A GB 1395558A GB 3817172 A GB3817172 A GB 3817172A GB 3817172 A GB3817172 A GB 3817172A GB 1395558 A GB1395558 A GB 1395558A
Authority
GB
United Kingdom
Prior art keywords
charge
electrodes
under
fixed
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3817172A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1395558A publication Critical patent/GB1395558A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Abstract

1395558 Charge-coupled devices RCA CORPORATION 16 Aug 1972 [19 Aug 1971] 38171/72 Heading H1K A 2-phase operated CCD has alternate adjacent pairs of capacitative electrodes 10-1, 12-1; 10-2, 12-2 &c., connected to the # 1 and # 2 lines respectively, and each pair of electrodes has asymmetric provision for the storage of fixed charge in the dielectric. This ensures that charge transfer proceeds in one direction only. The fixed charge under one electrode may be zero and under the other either positive or negative; or the fixed charges under both electrodes may be of the same sign but of different magnitude; or the fixed charges under the two electrodes may be opposite in polarity. As described, devices use P-type or N-type silicon substrates and an electrode sequence using both aluminium and polycrystalline silicon electrodes. Preferred devices use fixed charge storage only under one electrode of each pair, and this may be a negative charge stored in alumina or a positive charge stored at the interface between superposed layers of silicon nitride and oxide (as shown). In both cases the fixed charge may be inserted by the application for a short period of a voltage 3 or 4 times greater than those applied to the electrodes in normal operation. With alumina insulation the fixed charge may result from its method of deposition. The device input may use illumination or a source electrode and the device may be operated with a substrate bias. By suitably arranging fixed storage polarity and substrate conductivity type, prominence in operation may be given to the use either of potential wells or of potential barriers. In the latter case all or only part of the movable charge under an electrode pair may be transferred to the adjacent pair.
GB3817172A 1971-08-19 1972-08-16 Charge-coupled circuits Expired GB1395558A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17315271A 1971-08-19 1971-08-19

Publications (1)

Publication Number Publication Date
GB1395558A true GB1395558A (en) 1975-05-29

Family

ID=22630755

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3817172A Expired GB1395558A (en) 1971-08-19 1972-08-16 Charge-coupled circuits

Country Status (5)

Country Link
JP (1) JPS5123865B2 (en)
CA (1) CA1101548A (en)
DE (1) DE2240249C3 (en)
FR (1) FR2149568B1 (en)
GB (1) GB1395558A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4875176A (en) * 1972-01-12 1973-10-09
DE2351393C3 (en) * 1973-10-12 1978-06-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Charge transfer device in two-phase technology and process for its manufacture
JPS5815271A (en) * 1981-07-21 1983-01-28 Nec Corp Charge coupled element

Also Published As

Publication number Publication date
DE2240249A1 (en) 1973-02-22
DE2240249C3 (en) 1975-05-07
JPS4830879A (en) 1973-04-23
CA1101548A (en) 1981-05-19
JPS5123865B2 (en) 1976-07-20
FR2149568B1 (en) 1976-10-29
FR2149568A1 (en) 1973-03-30
DE2240249B2 (en) 1974-05-22

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees