JPS5570068A - Charge transfer device and its drive method - Google Patents
Charge transfer device and its drive methodInfo
- Publication number
- JPS5570068A JPS5570068A JP14398878A JP14398878A JPS5570068A JP S5570068 A JPS5570068 A JP S5570068A JP 14398878 A JP14398878 A JP 14398878A JP 14398878 A JP14398878 A JP 14398878A JP S5570068 A JPS5570068 A JP S5570068A
- Authority
- JP
- Japan
- Prior art keywords
- region
- charge
- transfer
- transfer electrodes
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 1
- 230000000295 complement effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To arbitrarily lengthen the time of one cycle, by mounting not less than one region containing the charge of the same kind as a small number of charge as a large number of charge to a surface region of a semiconductor among transfer electrodes. CONSTITUTION:A SiO2 layer 103 formed to the upper portions of a p<->-substrate 1 in silicon and p-regions 2, barrier regions, electrically insulates portions among transfer electrodes 104, 105 and 101, 102. Complementary form two phase drive pulses phi1, phi2 are applied to the transfer electrodes 104, 105. An n<->-region 106 is installed being held between a p<->-region under the transfer electorde 105 and a p-region under the transfer electrode 104. A channel stop region 107 is made up in such a manner that a p<+>-region is disposed onto an upper surface of a p<->-substrate 101 and an SiO2 layer is further built up on that.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14398878A JPS5570068A (en) | 1978-11-21 | 1978-11-21 | Charge transfer device and its drive method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14398878A JPS5570068A (en) | 1978-11-21 | 1978-11-21 | Charge transfer device and its drive method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5570068A true JPS5570068A (en) | 1980-05-27 |
Family
ID=15351685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14398878A Pending JPS5570068A (en) | 1978-11-21 | 1978-11-21 | Charge transfer device and its drive method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5570068A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183560A (en) * | 1986-01-28 | 1987-08-11 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Charge coupler |
| JP2011258906A (en) * | 2010-06-10 | 2011-12-22 | Kinki Univ | Ultrahigh-speed imaging element having signal integration function in element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5384487A (en) * | 1976-12-29 | 1978-07-25 | Matsushita Electric Ind Co Ltd | Electric charge transfer device |
-
1978
- 1978-11-21 JP JP14398878A patent/JPS5570068A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5384487A (en) * | 1976-12-29 | 1978-07-25 | Matsushita Electric Ind Co Ltd | Electric charge transfer device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62183560A (en) * | 1986-01-28 | 1987-08-11 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Charge coupler |
| EP0231049B1 (en) * | 1986-01-28 | 1992-04-08 | Koninklijke Philips Electronics N.V. | Charge-coupled device |
| JP2011258906A (en) * | 2010-06-10 | 2011-12-22 | Kinki Univ | Ultrahigh-speed imaging element having signal integration function in element |
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