JPS5588374A - Charge transferring device - Google Patents
Charge transferring deviceInfo
- Publication number
- JPS5588374A JPS5588374A JP16176478A JP16176478A JPS5588374A JP S5588374 A JPS5588374 A JP S5588374A JP 16176478 A JP16176478 A JP 16176478A JP 16176478 A JP16176478 A JP 16176478A JP S5588374 A JPS5588374 A JP S5588374A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- transferring
- phase
- electrode
- wires
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76891—Four-Phase CCD
Abstract
PURPOSE:To prevent the breaking of mother wires connected with the extended ends of transferring electrodes by leading out, of the extended ends of transferring electrodes, those belonging to a certain phase onto a common plane and shortening those belonging to other phases and leading them out onto a different common plane. CONSTITUTION:On a silicon substrate 21 provided with channel stoppers 22 and 23, the first polysilicon layer is formed all over via a silicon oxide film 24, then adding impurities to alternate phases, the first phase transferring electrode 25 and the third phase transferring electrode 26 are formed. Next, after etching off the part of field A to which impurities are not added, the second polysilicon layer is formed via the silicon oxide film to the middle part of the joining part B of lead wires from electrodes with the mother wires, and adding impurities to positions offset from the first and the third phase transferring electrodes 25 and 26, the second phase transferring electrode 28 and the fourth transferring electrode 29 are formed. By so doing, mother wires phi1, phi3 ; phi2, phi4 connected with the electrodes 25, 26; 28, 29 are arranged on flat faces and their breakage can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16176478A JPS5588374A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16176478A JPS5588374A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5588374A true JPS5588374A (en) | 1980-07-04 |
JPS5726429B2 JPS5726429B2 (en) | 1982-06-04 |
Family
ID=15741441
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16176478A Granted JPS5588374A (en) | 1978-12-27 | 1978-12-27 | Charge transferring device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5588374A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63160372A (en) * | 1986-12-24 | 1988-07-04 | Toshiba Corp | Solid-state image sensing device |
US4910568A (en) * | 1986-05-26 | 1990-03-20 | Fujitsu Limited | Image sensor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133572A (en) * | 1974-06-28 | 1976-03-22 | Texas Instruments Inc |
-
1978
- 1978-12-27 JP JP16176478A patent/JPS5588374A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5133572A (en) * | 1974-06-28 | 1976-03-22 | Texas Instruments Inc |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4910568A (en) * | 1986-05-26 | 1990-03-20 | Fujitsu Limited | Image sensor |
JPS63160372A (en) * | 1986-12-24 | 1988-07-04 | Toshiba Corp | Solid-state image sensing device |
Also Published As
Publication number | Publication date |
---|---|
JPS5726429B2 (en) | 1982-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1377129A (en) | Charged coupled devices | |
JPS5856458U (en) | Color solid-state imaging device | |
JPS5457875A (en) | Semiconductor nonvolatile memory device | |
JPS5588374A (en) | Charge transferring device | |
JPS5559759A (en) | Semiconductor device | |
JPS57114292A (en) | Thin film image pickup element | |
JPS5638865A (en) | Manufacture of charge transfer device | |
JPS5691471A (en) | Charge combining device | |
JPS54154966A (en) | Semiconductor electron device | |
GB1442841A (en) | Charge coupled devices | |
JPS5275189A (en) | Charge transfer device | |
JPS54158176A (en) | Charge transfer device | |
JPS55117242A (en) | Fabrication of semiconductor device | |
JPS5591868A (en) | Charge transfer device | |
JPS5598866A (en) | Charge transfer device | |
JPS52144288A (en) | Preparation of electrode in semiconductor device | |
ES359950A1 (en) | Improvements in and relating to insulated gate field effect transistors | |
JPS6418268A (en) | Semiconductor memory device | |
JPS5721863A (en) | Manufacture of charge coupled element | |
JPS5612770A (en) | Semiconductor device and its manufacturing device | |
JPS561546A (en) | Manufacture of integrated circuit device | |
JPS566466A (en) | Charge pumping type memory cell | |
JPS53110370A (en) | Semiconductor device | |
JPS5768070A (en) | Charge transfer device | |
JPS57196572A (en) | Semiconductor device |