JPS5591868A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5591868A
JPS5591868A JP8979A JP8979A JPS5591868A JP S5591868 A JPS5591868 A JP S5591868A JP 8979 A JP8979 A JP 8979A JP 8979 A JP8979 A JP 8979A JP S5591868 A JPS5591868 A JP S5591868A
Authority
JP
Japan
Prior art keywords
lead
phase
transfer electrode
electrode belonging
belonging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8979A
Other languages
Japanese (ja)
Other versions
JPS6033316B2 (en
Inventor
Hiroshi Sakai
Terunobu Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8979A priority Critical patent/JPS6033316B2/en
Publication of JPS5591868A publication Critical patent/JPS5591868A/en
Publication of JPS6033316B2 publication Critical patent/JPS6033316B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76891—Four-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent a breakage in a crossover wiring part of an aluminum bus to be formed on each electrode lead, by making the lead flat. CONSTITUTION:The terminating parts of lead 26 of the transfer electrode belonging to No.1 phase (phi1), lead 25 of the transfer electrode belonging to No.3 phase (phi3), lead 29 of the transfer electrode belonging to No.2 phase (phi2) and lead 28 of the transfer electrode belonging to No.4 phase (phi4) are aligned on No.1 and common flat surface No.2. Further, No.2 and No.3 Si oxide films 27 and 37 on No.1 and No.2 common flat surface are made flat. The connection of each electrode lead layer and the bus are made by forming connection holes 31 and 32 in a zigzag form on NO.2 and No.3 Si oxide films 27 and 37 by etching and by covering this with aluminum by evaporation.
JP8979A 1978-12-29 1978-12-29 charge transfer device Expired JPS6033316B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8979A JPS6033316B2 (en) 1978-12-29 1978-12-29 charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8979A JPS6033316B2 (en) 1978-12-29 1978-12-29 charge transfer device

Publications (2)

Publication Number Publication Date
JPS5591868A true JPS5591868A (en) 1980-07-11
JPS6033316B2 JPS6033316B2 (en) 1985-08-02

Family

ID=11464392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8979A Expired JPS6033316B2 (en) 1978-12-29 1978-12-29 charge transfer device

Country Status (1)

Country Link
JP (1) JPS6033316B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH052890Y2 (en) * 1987-04-15 1993-01-25

Also Published As

Publication number Publication date
JPS6033316B2 (en) 1985-08-02

Similar Documents

Publication Publication Date Title
JPS6299191U (en)
JPS5591868A (en) Charge transfer device
JPS5613779A (en) Photoelectric converter and its preparation
JPS57188105A (en) Electret constituent
JPS5691459A (en) Semiconductor device
JPS5661175A (en) Thin-film solar cell
JPS54101687A (en) Solar battery unit
JPS5555579A (en) Semiconductor device and method of fabricating the same
JPS5452958A (en) Elastic surface wave device
JPS55103775A (en) Manufacture of semiconductor device
JPS53126270A (en) Production of semiconductor devices
JPS577976A (en) Photo electromotive force element
JPS6441586A (en) Solid-state image pick-up device
JPS5696879A (en) Manufacture of photoelectric converter
JPS5576426A (en) Piezoelectric information input processor
JPS5534468A (en) Solar battery
JPS5713776A (en) Photovoltaic device
JPS5778181A (en) Semiconductor variable capacity element
JPS56117671A (en) Manufacture of thermal head
JPS5588374A (en) Charge transferring device
JPS54118177A (en) Manufacture of charge-coupled device
JPS558080A (en) Solar cell for wrist watch
JPS61111162U (en)
JPS54100277A (en) Semiconductor element for hybrid integrated circuit
JPS5694816A (en) Transversal filter