JPS54158176A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS54158176A
JPS54158176A JP6656178A JP6656178A JPS54158176A JP S54158176 A JPS54158176 A JP S54158176A JP 6656178 A JP6656178 A JP 6656178A JP 6656178 A JP6656178 A JP 6656178A JP S54158176 A JPS54158176 A JP S54158176A
Authority
JP
Japan
Prior art keywords
going
coming
charge transfer
path
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6656178A
Other languages
Japanese (ja)
Other versions
JPS616551B2 (en
Inventor
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP6656178A priority Critical patent/JPS54158176A/en
Priority to GB7918954A priority patent/GB2022920B/en
Priority to US06/044,224 priority patent/US4242692A/en
Priority to FR7914074A priority patent/FR2427663A1/en
Priority to CA000328784A priority patent/CA1138992A/en
Priority to DE19792922456 priority patent/DE2922456A1/en
Priority to NL7904406A priority patent/NL7904406A/en
Publication of JPS54158176A publication Critical patent/JPS54158176A/en
Publication of JPS616551B2 publication Critical patent/JPS616551B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD

Abstract

PURPOSE:To omit the bias electrode and others so far required and thus to simplify the structure by using the transfer region where the double-phase driving is possible via the single-layer transfer electrode structure and also securing the same CCD structure to the direction conversion part for both the going and coming-back paths. CONSTITUTION:Channel stopper region 2 which prescribes the charge transfer line to be returned in 180 deg. halfway is formed in the belt shape by diffusion on the surface of the 1st conducting semiconductor substrate 1 featuring the same conducting type as usbstrate 1 and with a higher impurity density along one direction. Then transfer electrodes 8a-8d are distributed in parallel via SiO2 film 7 on the surface of substrate 1 by crossing both the going and coming back paths of the charge transfer line. After this, going-path regions 13A1-13A4 and coming-back path regions 13B1-13B4 are formed along each charge transfer line, and at the same time direction conversion part 5 is provided at transfer region 13C of the return part. In such structure, double-phase clock voltage phi1 and phi2 are applied to electrodes 8a-8d with every second one, and then the charge is transferred from the going path to the coming-back path.
JP6656178A 1978-06-02 1978-06-02 Charge transfer device Granted JPS54158176A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6656178A JPS54158176A (en) 1978-06-02 1978-06-02 Charge transfer device
GB7918954A GB2022920B (en) 1978-06-02 1979-05-31 Electric charge transfer devices
US06/044,224 US4242692A (en) 1978-06-02 1979-05-31 Charge transfer device which has a pair of straight portions joined by a direction changing portion
FR7914074A FR2427663A1 (en) 1978-06-02 1979-05-31 LOAD TRANSFER DEVICE
CA000328784A CA1138992A (en) 1978-06-02 1979-05-31 Charge transfer device
DE19792922456 DE2922456A1 (en) 1978-06-02 1979-06-01 CHARGE TRANSFER DEVICE
NL7904406A NL7904406A (en) 1978-06-02 1979-06-05 DEVICE FOR CARGO TRANSFER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6656178A JPS54158176A (en) 1978-06-02 1978-06-02 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS54158176A true JPS54158176A (en) 1979-12-13
JPS616551B2 JPS616551B2 (en) 1986-02-27

Family

ID=13319464

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6656178A Granted JPS54158176A (en) 1978-06-02 1978-06-02 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS54158176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176269A (en) * 1984-02-23 1985-09-10 Nec Corp Charge transfer element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176269A (en) * 1984-02-23 1985-09-10 Nec Corp Charge transfer element

Also Published As

Publication number Publication date
JPS616551B2 (en) 1986-02-27

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