JPS57138177A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS57138177A
JPS57138177A JP2395381A JP2395381A JPS57138177A JP S57138177 A JPS57138177 A JP S57138177A JP 2395381 A JP2395381 A JP 2395381A JP 2395381 A JP2395381 A JP 2395381A JP S57138177 A JPS57138177 A JP S57138177A
Authority
JP
Japan
Prior art keywords
electrode
region
charge transfer
gate electrode
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2395381A
Other languages
Japanese (ja)
Inventor
Kazuo Miwata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2395381A priority Critical patent/JPS57138177A/en
Publication of JPS57138177A publication Critical patent/JPS57138177A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain the transfer device having excellent maximum operating frequency and charge detecting sensitivity for the subject charge transfer device by a method wherein an output gate electrode, adjoining the charge transfer electrode provided on a charge transfer region, is composed of the resistance electrode being arranged accompanying a device imparting potential gradient in longitudinal direction. CONSTITUTION:A charge transfer region 12 is provided on a P type Si substrate 1, transfer electrodes 3-6 are provided on the region 12, and at the same time, an output gate electrode 7 is formed along the electrode 6. Also, an N type source region 10' and an MOS transistor consisting of a drain region 14 and a gate electrode 8 are provided, and the region 10' is connected to the gate of an MOS transistor 9 constituting a follower circuit. In this constitution, an output gate electrode 7 is formed using the resistance electrode of an MOS transistor film and an inclination is given to the electric potential, the channel potential located under the electrode 7 is inclined, and the diffusion speed of the carrier is increased.
JP2395381A 1981-02-20 1981-02-20 Charge transfer device Pending JPS57138177A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2395381A JPS57138177A (en) 1981-02-20 1981-02-20 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2395381A JPS57138177A (en) 1981-02-20 1981-02-20 Charge transfer device

Publications (1)

Publication Number Publication Date
JPS57138177A true JPS57138177A (en) 1982-08-26

Family

ID=12124903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2395381A Pending JPS57138177A (en) 1981-02-20 1981-02-20 Charge transfer device

Country Status (1)

Country Link
JP (1) JPS57138177A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118174A (en) * 1984-07-04 1986-01-27 Toshiba Corp Charge detecting circuit
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
JPH04196139A (en) * 1990-11-26 1992-07-15 Nec Corp Charge transfer device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6118174A (en) * 1984-07-04 1986-01-27 Toshiba Corp Charge detecting circuit
JPS61198676A (en) * 1985-02-27 1986-09-03 Nec Corp Semiconductor integrated circuit device
JPH055179B2 (en) * 1985-02-27 1993-01-21 Nippon Electric Co
JPH04196139A (en) * 1990-11-26 1992-07-15 Nec Corp Charge transfer device

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