JPS57109374A - Buried channel type charge transfer device - Google Patents

Buried channel type charge transfer device

Info

Publication number
JPS57109374A
JPS57109374A JP18650180A JP18650180A JPS57109374A JP S57109374 A JPS57109374 A JP S57109374A JP 18650180 A JP18650180 A JP 18650180A JP 18650180 A JP18650180 A JP 18650180A JP S57109374 A JPS57109374 A JP S57109374A
Authority
JP
Japan
Prior art keywords
voltage
charge transfer
gate
buried channel
transfer device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18650180A
Other languages
Japanese (ja)
Inventor
Masamichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP18650180A priority Critical patent/JPS57109374A/en
Publication of JPS57109374A publication Critical patent/JPS57109374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD

Abstract

PURPOSE:To make it possible to flow excess carriers into a charge transfer region by making a buried channel pinch off without creating an inversion layer on the surface of the charge transfer region at a required gate voltage. CONSTITUTION:The density and depth of a channel region 2 are selected to make it pinch off at the voltage prior to creating an inversion layer applied to gate electrodes by changing the voltage in the direction to create the inversion layer on the semiconductor surface of the channel region 2 on the gate 4 so as to make the properties of the minimum potential phimin. in the buried channel region 2 and the gate 4 voltage VG as shown in the figure. In this way, the minimum potential phimin. can be made 0 while the pinch off voltage is applied on the gate 14.
JP18650180A 1980-12-26 1980-12-26 Buried channel type charge transfer device Pending JPS57109374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18650180A JPS57109374A (en) 1980-12-26 1980-12-26 Buried channel type charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18650180A JPS57109374A (en) 1980-12-26 1980-12-26 Buried channel type charge transfer device

Publications (1)

Publication Number Publication Date
JPS57109374A true JPS57109374A (en) 1982-07-07

Family

ID=16189589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18650180A Pending JPS57109374A (en) 1980-12-26 1980-12-26 Buried channel type charge transfer device

Country Status (1)

Country Link
JP (1) JPS57109374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01503187A (en) * 1987-05-05 1989-10-26 ヒューズ・エアクラフト・カンパニー Charge-coupled device with focused ion beam configuration
US8297589B2 (en) 2006-04-12 2012-10-30 Waters Technologies Corp Active valve and methods of operation thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01503187A (en) * 1987-05-05 1989-10-26 ヒューズ・エアクラフト・カンパニー Charge-coupled device with focused ion beam configuration
US8297589B2 (en) 2006-04-12 2012-10-30 Waters Technologies Corp Active valve and methods of operation thereof

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