JPS558007A - Electric charge transferring device - Google Patents

Electric charge transferring device

Info

Publication number
JPS558007A
JPS558007A JP7873978A JP7873978A JPS558007A JP S558007 A JPS558007 A JP S558007A JP 7873978 A JP7873978 A JP 7873978A JP 7873978 A JP7873978 A JP 7873978A JP S558007 A JPS558007 A JP S558007A
Authority
JP
Japan
Prior art keywords
electrode
electric charge
input signal
source
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7873978A
Other languages
Japanese (ja)
Other versions
JPS6315753B2 (en
Inventor
Yutaka Hatano
Susumu Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP7873978A priority Critical patent/JPS558007A/en
Publication of JPS558007A publication Critical patent/JPS558007A/en
Publication of JPS6315753B2 publication Critical patent/JPS6315753B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To transfer electric charge with proper alignment by providing a gate electrode following a source layer, an input signal electrode and transferring electrode and also by providing all the electrodes with barrier regions and electric charge accumulating regions. CONSTITUTION:A P type Si base plate 11 has an n type source, and a gate, an input signal and a transferring electrode 141, 142 and 143... are continuously connected from a source 12 in common on a every-two basis. An electric charge sampling signal phi5, an input signal phiIN and CP phi1 and phi2 are added to all the cells. P<+> layers 151... 157 are provided on the bottoms of the electrodes 141, 143... 147. Potential of the source 12 is closer to a grounding potential rather than a superficial potential when the electrode 141 is ''H'' and it is maintained at a constant potential higher than the superficial potential when the electrode 141 is ''L''. The electrode 142 is longer than electrodes 144 and 146... and capable of accumulating more electric charge. In this mechanism, the bottom of an input signal electrode is excessively supplied with electric charge from the input source and the excess is returned to the bottom of a gate electrode to prepare a constant electric charge input signal, and it is sent to the bottom of a transferring electrode only at the time of Logic 1.
JP7873978A 1978-06-30 1978-06-30 Electric charge transferring device Granted JPS558007A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7873978A JPS558007A (en) 1978-06-30 1978-06-30 Electric charge transferring device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7873978A JPS558007A (en) 1978-06-30 1978-06-30 Electric charge transferring device

Publications (2)

Publication Number Publication Date
JPS558007A true JPS558007A (en) 1980-01-21
JPS6315753B2 JPS6315753B2 (en) 1988-04-06

Family

ID=13670248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7873978A Granted JPS558007A (en) 1978-06-30 1978-06-30 Electric charge transferring device

Country Status (1)

Country Link
JP (1) JPS558007A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132669A (en) * 1983-01-20 1984-07-30 Sony Corp Input circuit of charge transfer element
JPS6084868A (en) * 1983-10-15 1985-05-14 Matsushita Electronics Corp Charge transfer device
JPS61260675A (en) * 1985-05-15 1986-11-18 Hitachi Ltd Driving method for charge transfer device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119983A (en) * 1974-07-29 1976-02-17 Fairchild Camera Instr Co DENKADO NYUSOSHI
JPS52135686A (en) * 1976-05-10 1977-11-12 Toshiba Corp Me/b type charge transfer device
JPS52135276A (en) * 1976-05-07 1977-11-12 Toshiba Corp Charge transfer element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5119983A (en) * 1974-07-29 1976-02-17 Fairchild Camera Instr Co DENKADO NYUSOSHI
JPS52135276A (en) * 1976-05-07 1977-11-12 Toshiba Corp Charge transfer element
JPS52135686A (en) * 1976-05-10 1977-11-12 Toshiba Corp Me/b type charge transfer device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132669A (en) * 1983-01-20 1984-07-30 Sony Corp Input circuit of charge transfer element
JPH0522382B2 (en) * 1983-01-20 1993-03-29 Sony Corp
JPS6084868A (en) * 1983-10-15 1985-05-14 Matsushita Electronics Corp Charge transfer device
JPS61260675A (en) * 1985-05-15 1986-11-18 Hitachi Ltd Driving method for charge transfer device

Also Published As

Publication number Publication date
JPS6315753B2 (en) 1988-04-06

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