JPS52135276A - Charge transfer element - Google Patents
Charge transfer elementInfo
- Publication number
- JPS52135276A JPS52135276A JP5206376A JP5206376A JPS52135276A JP S52135276 A JPS52135276 A JP S52135276A JP 5206376 A JP5206376 A JP 5206376A JP 5206376 A JP5206376 A JP 5206376A JP S52135276 A JPS52135276 A JP S52135276A
- Authority
- JP
- Japan
- Prior art keywords
- charge transfer
- transfer element
- charge
- signal
- fat zero
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:To apply always constant fat zero charge corresponding to input signal or charge corresponding to signal ''1'' as binary signal charge by providing a potential barrier for fat zero charge injection at input part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5206376A JPS52135276A (en) | 1976-05-07 | 1976-05-07 | Charge transfer element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5206376A JPS52135276A (en) | 1976-05-07 | 1976-05-07 | Charge transfer element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52135276A true JPS52135276A (en) | 1977-11-12 |
Family
ID=12904344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5206376A Pending JPS52135276A (en) | 1976-05-07 | 1976-05-07 | Charge transfer element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52135276A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558007A (en) * | 1978-06-30 | 1980-01-21 | Toshiba Corp | Electric charge transferring device |
-
1976
- 1976-05-07 JP JP5206376A patent/JPS52135276A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS558007A (en) * | 1978-06-30 | 1980-01-21 | Toshiba Corp | Electric charge transferring device |
JPS6315753B2 (en) * | 1978-06-30 | 1988-04-06 | Tokyo Shibaura Electric Co |
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