JPS5385185A - Charge transfer semiconductor device - Google Patents

Charge transfer semiconductor device

Info

Publication number
JPS5385185A
JPS5385185A JP4077A JP4077A JPS5385185A JP S5385185 A JPS5385185 A JP S5385185A JP 4077 A JP4077 A JP 4077A JP 4077 A JP4077 A JP 4077A JP S5385185 A JPS5385185 A JP S5385185A
Authority
JP
Japan
Prior art keywords
semiconductor device
charge transfer
transfer semiconductor
integration
scale
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4077A
Other languages
Japanese (ja)
Inventor
Yukio Tanigaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4077A priority Critical patent/JPS5385185A/en
Publication of JPS5385185A publication Critical patent/JPS5385185A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/10—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in inductance, i.e. electric circuits therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To increase the scale of integration of a charge transfer semiconductor device.
JP4077A 1977-01-05 1977-01-05 Charge transfer semiconductor device Pending JPS5385185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4077A JPS5385185A (en) 1977-01-05 1977-01-05 Charge transfer semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4077A JPS5385185A (en) 1977-01-05 1977-01-05 Charge transfer semiconductor device

Publications (1)

Publication Number Publication Date
JPS5385185A true JPS5385185A (en) 1978-07-27

Family

ID=11463192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4077A Pending JPS5385185A (en) 1977-01-05 1977-01-05 Charge transfer semiconductor device

Country Status (1)

Country Link
JP (1) JPS5385185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5223726A (en) * 1989-07-25 1993-06-29 Matsushita Electric Industrial Co., Ltd. Semiconductor device for charge transfer device

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