JPS5469086A - Charge transfer type semiconductor device - Google Patents
Charge transfer type semiconductor deviceInfo
- Publication number
- JPS5469086A JPS5469086A JP13608977A JP13608977A JPS5469086A JP S5469086 A JPS5469086 A JP S5469086A JP 13608977 A JP13608977 A JP 13608977A JP 13608977 A JP13608977 A JP 13608977A JP S5469086 A JPS5469086 A JP S5469086A
- Authority
- JP
- Japan
- Prior art keywords
- transfer
- clock
- electrodes
- phase
- clocks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
- H01L29/76891—Four-Phase CCD
Abstract
PURPOSE:To realize a high concentration of the semiconductor device by applying the n-phase transfer clock free from the mutual overlap to the transfer electrode and also applying the inverted n-phase transfer clock to the storage electrode respectively. CONSTITUTION:Gate insulating film 2 is coated on Si substrate 1, and storage electrodes 3-6 which store and transfer the signal charge with separation by insulating film 11 connecting to film 2 plus transfer electrodes 7-10 which transfer the signal charge are distributed alternately an film 2. Then transfer clocks phi1S,phi2S, phi3S and phi4S are applied to electrodes 3-6 each; while transfer clocks phi1T, phi2T,phi3T and phi4T are supplied to transfer electrodes 7-10 respectively. Such application of the transfer clocks is repeated subsequently until the n-phase. In this case, clock phi1Sturns clock phi1T into the waveform which is inverted with a fixed delay time, with the state of other clock groups set into the similar way. Thus, the concentration can be enhanced for the device without decreasing the transfer enable charge amount.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13608977A JPS5469086A (en) | 1977-11-11 | 1977-11-11 | Charge transfer type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13608977A JPS5469086A (en) | 1977-11-11 | 1977-11-11 | Charge transfer type semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5469086A true JPS5469086A (en) | 1979-06-02 |
| JPS6132829B2 JPS6132829B2 (en) | 1986-07-29 |
Family
ID=15166989
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13608977A Granted JPS5469086A (en) | 1977-11-11 | 1977-11-11 | Charge transfer type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5469086A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0466428U (en) * | 1990-10-22 | 1992-06-11 |
-
1977
- 1977-11-11 JP JP13608977A patent/JPS5469086A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6132829B2 (en) | 1986-07-29 |
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