JPS54136287A - Photo sensitive switching element - Google Patents
Photo sensitive switching elementInfo
- Publication number
- JPS54136287A JPS54136287A JP4436078A JP4436078A JPS54136287A JP S54136287 A JPS54136287 A JP S54136287A JP 4436078 A JP4436078 A JP 4436078A JP 4436078 A JP4436078 A JP 4436078A JP S54136287 A JPS54136287 A JP S54136287A
- Authority
- JP
- Japan
- Prior art keywords
- regions
- type region
- type
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electronic Switches (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE: To switch DC greater current with small input optical current, by providing the P type layer at the rear side of the N type semiconductor substrate, N type region at the surface and the P type region having the N type region in internal part respectively, and constituting thyristor, transistor and solar cell through the selective use of those regions.
CONSTITUTION: The P type layer 5 is formed at the back of the N type semiconductor substrate 1, the P type region 2 and the N type region 4 are formed by diffusion at the surface, and the N type region 3 is provided in the region 2. Thus, the thyristor is constituted with the regions 5, 1, 2 and 3, the transistor is by the regions 1, 2, 3 and the solar cell is made with the regions 1 and 5. Further, on the regions 3, 4 and 5, the electrodes 6, 7 and 8 are respectively provided and the voltage Va is applied between the electrodes 6 and 7, by taking the electrode 6 as negative and the electrode 7 as positive polarity. Further, between the electrodes 7 and 8, the resistor R1 is connected, and the load resistor RL is connected between the electrode 7 and the voltage Va of positive polarity, and light L is radiated on the surface of the element 9. Thus, switching of DC greater current by means of optical signal can be made.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4436078A JPS54136287A (en) | 1978-04-14 | 1978-04-14 | Photo sensitive switching element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4436078A JPS54136287A (en) | 1978-04-14 | 1978-04-14 | Photo sensitive switching element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54136287A true JPS54136287A (en) | 1979-10-23 |
Family
ID=12689331
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4436078A Pending JPS54136287A (en) | 1978-04-14 | 1978-04-14 | Photo sensitive switching element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54136287A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5466954A (en) * | 1994-12-21 | 1995-11-14 | Honeywell Inc. | Shunt phototransistor with reverse bias protection |
-
1978
- 1978-04-14 JP JP4436078A patent/JPS54136287A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5466954A (en) * | 1994-12-21 | 1995-11-14 | Honeywell Inc. | Shunt phototransistor with reverse bias protection |
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