JPS54136287A - Photo sensitive switching element - Google Patents

Photo sensitive switching element

Info

Publication number
JPS54136287A
JPS54136287A JP4436078A JP4436078A JPS54136287A JP S54136287 A JPS54136287 A JP S54136287A JP 4436078 A JP4436078 A JP 4436078A JP 4436078 A JP4436078 A JP 4436078A JP S54136287 A JPS54136287 A JP S54136287A
Authority
JP
Japan
Prior art keywords
regions
type region
type
electrodes
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4436078A
Other languages
Japanese (ja)
Inventor
Toshiro Abe
Yukio Iitaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Priority to JP4436078A priority Critical patent/JPS54136287A/en
Publication of JPS54136287A publication Critical patent/JPS54136287A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electronic Switches (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE: To switch DC greater current with small input optical current, by providing the P type layer at the rear side of the N type semiconductor substrate, N type region at the surface and the P type region having the N type region in internal part respectively, and constituting thyristor, transistor and solar cell through the selective use of those regions.
CONSTITUTION: The P type layer 5 is formed at the back of the N type semiconductor substrate 1, the P type region 2 and the N type region 4 are formed by diffusion at the surface, and the N type region 3 is provided in the region 2. Thus, the thyristor is constituted with the regions 5, 1, 2 and 3, the transistor is by the regions 1, 2, 3 and the solar cell is made with the regions 1 and 5. Further, on the regions 3, 4 and 5, the electrodes 6, 7 and 8 are respectively provided and the voltage Va is applied between the electrodes 6 and 7, by taking the electrode 6 as negative and the electrode 7 as positive polarity. Further, between the electrodes 7 and 8, the resistor R1 is connected, and the load resistor RL is connected between the electrode 7 and the voltage Va of positive polarity, and light L is radiated on the surface of the element 9. Thus, switching of DC greater current by means of optical signal can be made.
COPYRIGHT: (C)1979,JPO&Japio
JP4436078A 1978-04-14 1978-04-14 Photo sensitive switching element Pending JPS54136287A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4436078A JPS54136287A (en) 1978-04-14 1978-04-14 Photo sensitive switching element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4436078A JPS54136287A (en) 1978-04-14 1978-04-14 Photo sensitive switching element

Publications (1)

Publication Number Publication Date
JPS54136287A true JPS54136287A (en) 1979-10-23

Family

ID=12689331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4436078A Pending JPS54136287A (en) 1978-04-14 1978-04-14 Photo sensitive switching element

Country Status (1)

Country Link
JP (1) JPS54136287A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466954A (en) * 1994-12-21 1995-11-14 Honeywell Inc. Shunt phototransistor with reverse bias protection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466954A (en) * 1994-12-21 1995-11-14 Honeywell Inc. Shunt phototransistor with reverse bias protection

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