JPS5721863A - Manufacture of charge coupled element - Google Patents

Manufacture of charge coupled element

Info

Publication number
JPS5721863A
JPS5721863A JP9705480A JP9705480A JPS5721863A JP S5721863 A JPS5721863 A JP S5721863A JP 9705480 A JP9705480 A JP 9705480A JP 9705480 A JP9705480 A JP 9705480A JP S5721863 A JPS5721863 A JP S5721863A
Authority
JP
Japan
Prior art keywords
film
charge coupled
transfer electrodes
coupled element
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9705480A
Other languages
Japanese (ja)
Inventor
Tetsuji Kawabata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP9705480A priority Critical patent/JPS5721863A/en
Publication of JPS5721863A publication Critical patent/JPS5721863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To prevent the shortcircuit accident between transfer electrodes by forming flat transfer electrodes in a charge coupled element. CONSTITUTION:An insulating film 11 is formed on the surface of a P type silicon substrate 10, a conductive film 12 is covered thereon, a nitrided silicon film 13 is then formed, a slit 14 is formed. With the film 13 as a mask oxygen ions 15 is injected at an oblique angle on the film 12 to form an alumina 16, and transfer electrode 17 thus insulated are formed. Therefore, an insulator 18 is covered thereon, and contacts 19 connected to the transfer electrodes 17 are formed.
JP9705480A 1980-07-15 1980-07-15 Manufacture of charge coupled element Pending JPS5721863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9705480A JPS5721863A (en) 1980-07-15 1980-07-15 Manufacture of charge coupled element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9705480A JPS5721863A (en) 1980-07-15 1980-07-15 Manufacture of charge coupled element

Publications (1)

Publication Number Publication Date
JPS5721863A true JPS5721863A (en) 1982-02-04

Family

ID=14181938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9705480A Pending JPS5721863A (en) 1980-07-15 1980-07-15 Manufacture of charge coupled element

Country Status (1)

Country Link
JP (1) JPS5721863A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690559A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690559A (en) * 1979-12-22 1981-07-22 Fujitsu Ltd Manufacture of semiconductor device

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