JPS5687327A - Method of connecting electrode - Google Patents

Method of connecting electrode

Info

Publication number
JPS5687327A
JPS5687327A JP16410579A JP16410579A JPS5687327A JP S5687327 A JPS5687327 A JP S5687327A JP 16410579 A JP16410579 A JP 16410579A JP 16410579 A JP16410579 A JP 16410579A JP S5687327 A JPS5687327 A JP S5687327A
Authority
JP
Japan
Prior art keywords
electrodes
conductive layer
etching
connector
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16410579A
Other languages
Japanese (ja)
Inventor
Kunihiko Kanda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SIGMA GIJUTSU KOGYO
SIGMA GIJUTSU KOGYO KK
Original Assignee
SIGMA GIJUTSU KOGYO
SIGMA GIJUTSU KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SIGMA GIJUTSU KOGYO, SIGMA GIJUTSU KOGYO KK filed Critical SIGMA GIJUTSU KOGYO
Priority to JP16410579A priority Critical patent/JPS5687327A/en
Priority to US06/185,439 priority patent/US4338157A/en
Priority to EP80304609A priority patent/EP0032028B1/en
Priority to DE8080304609T priority patent/DE3071021D1/en
Publication of JPS5687327A publication Critical patent/JPS5687327A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
    • G01N17/02—Electrochemical measuring systems for weathering, corrosion or corrosion-protection measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Immunology (AREA)
  • Environmental Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Pathology (AREA)
  • Ecology (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To make it possible to make an exact measurement of an etching time and to improve an operation efficiency by a method wherein two or more electrodes of a connector are press-fixed to a substrate whose insulator is attached to a conductive layer to confirm a connection established between the conductive layer and electrodes. CONSTITUTION:When Al is evaporated on the whole body and a resist of an insulator is coated onto the evaporated Al according to an electric wiring pattern to apply an etching to the Al, the first and second electrodes 12, 13 made of Al or the like is inserted in the connector consisting of contacts 17, 18, split groove 19, screw 14, fulcrum 15 and connector main body 11, and by tightening the screw 14, the contacts 17, 18 of the electrodes are press-fixed tightly to the Al-conductive layer breaking through the resist, and the substrate is soaked in etching liquid to be applied to etching. Accordingly, due to the two or more electrodes of the connector, the confirmation of the connections between the conductive layer and electrodes is made possible and also the precise measurement of the etching time, the improvements in the operation efficiency and reliability are enabled to be realized.
JP16410579A 1979-10-12 1979-12-19 Method of connecting electrode Pending JPS5687327A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16410579A JPS5687327A (en) 1979-12-19 1979-12-19 Method of connecting electrode
US06/185,439 US4338157A (en) 1979-10-12 1980-09-09 Method for forming electrical connecting lines by monitoring the etch rate during wet etching
EP80304609A EP0032028B1 (en) 1979-10-12 1980-12-19 Method and apparatus for forming electrical interconnections
DE8080304609T DE3071021D1 (en) 1979-12-19 1980-12-19 Method and apparatus for forming electrical interconnections

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16410579A JPS5687327A (en) 1979-12-19 1979-12-19 Method of connecting electrode

Publications (1)

Publication Number Publication Date
JPS5687327A true JPS5687327A (en) 1981-07-15

Family

ID=15786846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16410579A Pending JPS5687327A (en) 1979-10-12 1979-12-19 Method of connecting electrode

Country Status (1)

Country Link
JP (1) JPS5687327A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206834A (en) * 1986-03-07 1987-09-11 Nec Corp Electrode for electrochemical etching
WO2016062637A1 (en) * 2014-10-23 2016-04-28 Chambre De Commerce Et D'industrie De Region Paris Ile De France (Esiee Paris) Dismantlable micro electrodes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50767A (en) * 1973-05-02 1975-01-07
JPS54116179A (en) * 1978-03-01 1979-09-10 Kunihiko Kanda Method of forming electric wire

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50767A (en) * 1973-05-02 1975-01-07
JPS54116179A (en) * 1978-03-01 1979-09-10 Kunihiko Kanda Method of forming electric wire

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62206834A (en) * 1986-03-07 1987-09-11 Nec Corp Electrode for electrochemical etching
JPH0682648B2 (en) * 1986-03-07 1994-10-19 日本電気株式会社 Electrode for electrochemical etching
WO2016062637A1 (en) * 2014-10-23 2016-04-28 Chambre De Commerce Et D'industrie De Region Paris Ile De France (Esiee Paris) Dismantlable micro electrodes

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