JPS57197874A - Optical electromotive force element - Google Patents

Optical electromotive force element

Info

Publication number
JPS57197874A
JPS57197874A JP56083103A JP8310381A JPS57197874A JP S57197874 A JPS57197874 A JP S57197874A JP 56083103 A JP56083103 A JP 56083103A JP 8310381 A JP8310381 A JP 8310381A JP S57197874 A JPS57197874 A JP S57197874A
Authority
JP
Japan
Prior art keywords
layer
electromotive force
force element
amorphous
durability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56083103A
Other languages
Japanese (ja)
Inventor
Hisanori Tsuchino
Manami Tejima
Fumio Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP56083103A priority Critical patent/JPS57197874A/en
Publication of JPS57197874A publication Critical patent/JPS57197874A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50Photovoltaic [PV] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/311Phthalocyanine
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve the efficiency of photoelectric conversion, and to ameliorate durability by forming the optical active layer of the optical electromotive force element by a layer containing an organic optical semiconductor and amorphous Si. CONSTITUTION:A metallic layer 3 forming an ohmic electrode is shaped onto a conductive or electrical insulating supporter 2 through vacuum evaporation, etc., and the amorphous Si layer 4 is formed through an RF capacitance glow discharge method. The organic optical semiconductor layer 5 (7 is a depletion layer) is shaped onto the layer 4 in a manner, etc. that Cu-phthalocyanine is dispersed into a vinylidene-chloride-acrylonitrile copolymer and applied by means of a spinner, and lastly an ohmic electrode metallic layer 6 is formed. Accordingly, the efficiency of photoelectric conversion is improved, a secular change is reduced, and durability is ameliorated.
JP56083103A 1981-05-29 1981-05-29 Optical electromotive force element Pending JPS57197874A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56083103A JPS57197874A (en) 1981-05-29 1981-05-29 Optical electromotive force element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56083103A JPS57197874A (en) 1981-05-29 1981-05-29 Optical electromotive force element

Publications (1)

Publication Number Publication Date
JPS57197874A true JPS57197874A (en) 1982-12-04

Family

ID=13792851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56083103A Pending JPS57197874A (en) 1981-05-29 1981-05-29 Optical electromotive force element

Country Status (1)

Country Link
JP (1) JPS57197874A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583237A (en) * 2012-02-20 2012-07-18 北京交通大学 Device and method for obtaining controllable-molecular-arrangement nanometer film by high vacuum electric field modulation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583237A (en) * 2012-02-20 2012-07-18 北京交通大学 Device and method for obtaining controllable-molecular-arrangement nanometer film by high vacuum electric field modulation

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