JPS572573A - Charge transfer element - Google Patents

Charge transfer element

Info

Publication number
JPS572573A
JPS572573A JP7680580A JP7680580A JPS572573A JP S572573 A JPS572573 A JP S572573A JP 7680580 A JP7680580 A JP 7680580A JP 7680580 A JP7680580 A JP 7680580A JP S572573 A JPS572573 A JP S572573A
Authority
JP
Japan
Prior art keywords
regions
type
channel region
phase clock
gate electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7680580A
Other languages
Japanese (ja)
Inventor
Hiroyuki Matsumoto
Masamichi Sakamoto
Takeo Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP7680580A priority Critical patent/JPS572573A/en
Publication of JPS572573A publication Critical patent/JPS572573A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76841—Two-Phase CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To enhance the density of charge transfer elements by forming 1 bit of 3 transfer stages, fixing the surface vicinity of the first stage to a substrate potential, and driving the second and the third stages via gate electrodes with two-phase clock signals. CONSTITUTION:An N-type buried channel region 2 is formed on one main surface of a P-type semiconductor subsrtate 1, and a plurality of shallow P-type regions 3 are formed at the prescribed interval on the channel region 2. An N-type layer 4 is formed under the respective regions 3. An insulating film 5 is formed on the overall surfaces of the regions 2 and 3. Further, the first and the second gate electrodes 6 and 7 are alternately arranged toward the transferring direction of signal charge and are thus covered on the film 5. Two-phase clock voltages are applied to the electrodes 6 and 7, and the regions 3 are fixed simultaneously to the potential applied to the substrate 1.
JP7680580A 1980-06-06 1980-06-06 Charge transfer element Pending JPS572573A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7680580A JPS572573A (en) 1980-06-06 1980-06-06 Charge transfer element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7680580A JPS572573A (en) 1980-06-06 1980-06-06 Charge transfer element

Publications (1)

Publication Number Publication Date
JPS572573A true JPS572573A (en) 1982-01-07

Family

ID=13615864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7680580A Pending JPS572573A (en) 1980-06-06 1980-06-06 Charge transfer element

Country Status (1)

Country Link
JP (1) JPS572573A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159171A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Solid state image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03159171A (en) * 1989-11-16 1991-07-09 Sanyo Electric Co Ltd Solid state image sensor

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