GB1453341A - Charge-coupled linear imaging device - Google Patents

Charge-coupled linear imaging device

Info

Publication number
GB1453341A
GB1453341A GB271074A GB271074A GB1453341A GB 1453341 A GB1453341 A GB 1453341A GB 271074 A GB271074 A GB 271074A GB 271074 A GB271074 A GB 271074A GB 1453341 A GB1453341 A GB 1453341A
Authority
GB
United Kingdom
Prior art keywords
elements
shift registers
charge
electrodes
line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB271074A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1453341A publication Critical patent/GB1453341A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/7685—Three-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76833—Buried channel CCD
    • H01L29/76858—Four-Phase CCD
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/701—Line sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1453341 Semi-conductor imaging devices FAIRCHILD CAMERA & INSTRUMENT CORP 21 Jan 1974 [22 March 1973] 02710/74 Heading H1K [Also in Division H4] A linear imaging array comprises a line of radiation-sensitive elements 32 including a plurality of transparent electrodes formed on the top surface of a layer of insulation 15 formed over a semi-conductor material 11, first and second CCD shift registers 34 located on opposite sides of the elements 32 each of the shift registers being covered with an opaque material, and an arrangement whereby charge packets generated in the line of elements 32 are transferred to appropriate positions in the first and second shift registers 34 and are then shifted along the respective registers to the ends thereof, where they may be read-off and utilized. Preferably the radiation-sensitive elements 32 also comprise charge coupled devices. The semiconductor substrate 11 may have a buried channel 14 and adjacent photosensitive elements 32 in the line are separated by a serpentine channel stop 31, Fig. 2a (not shown), such that the charge pockets formed in adjacent elements 32 are simultaneously transferred to opposite shift registers, by appropriately controlling the voltage on the transfer gates 33a and 33b and on the respective shift register electrodes. The charge packets transferred to the first and second shift registers from the elements 32 are then shifted in sequence down each shift register into a third shift register 37, whose electrodes are controlled by a clock signal having a frequency twice that controlling the electrodes of the first two shift registers. The charge packets thus shifted to the end of shift register 37 through diode 38 and output MOS transistors 39, 40 produce an output signal representative of the light image input to the line of elements 32. Figs. 4 and 5 (not shown) illustrate alternative output arrangements, and Fig. 6 (not shown) indicates the particular voltage signals to be applied to the electrodes to obtain the desired output. The charge couple devices of the light sensitive elements and the shift registers and the output diode and transistors may be fabricated in a single monolithic integrated circuit chip.
GB271074A 1973-03-22 1974-01-21 Charge-coupled linear imaging device Expired GB1453341A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34375973A 1973-03-22 1973-03-22

Publications (1)

Publication Number Publication Date
GB1453341A true GB1453341A (en) 1976-10-20

Family

ID=23347531

Family Applications (1)

Application Number Title Priority Date Filing Date
GB271074A Expired GB1453341A (en) 1973-03-22 1974-01-21 Charge-coupled linear imaging device

Country Status (4)

Country Link
JP (2) JPS49123722A (en)
CA (1) CA1020656A (en)
GB (1) GB1453341A (en)
HK (1) HK6480A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416602A1 (en) * 1978-02-06 1979-08-31 Fairchild Camera Instr Co CCD with charge packet memories - uses charges representing illumination and has transmission devices and signal processing unit
EP0068786A2 (en) * 1981-06-24 1983-01-05 Plessey Overseas Limited Improvements in or relating to detector arrays
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders
EP0109445A1 (en) * 1982-05-21 1984-05-30 Sony Corporation Charge transfer devices for multiplexing signals
FR2685152A1 (en) * 1991-11-27 1993-06-18 Eev Ltd LOAD COUPLING DEVICE.
US5528642A (en) * 1993-01-21 1996-06-18 Sony Corporation Solid-state imaging device with fast clock speed for improved image quality

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57190471A (en) * 1981-05-19 1982-11-24 Fuji Photo Film Co Ltd Two-dimensional solid state image pickup device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416602A1 (en) * 1978-02-06 1979-08-31 Fairchild Camera Instr Co CCD with charge packet memories - uses charges representing illumination and has transmission devices and signal processing unit
EP0068786A2 (en) * 1981-06-24 1983-01-05 Plessey Overseas Limited Improvements in or relating to detector arrays
EP0068786A3 (en) * 1981-06-24 1985-10-30 Plessey Overseas Limited Improvements in or relating to detector arrays
EP0109445A1 (en) * 1982-05-21 1984-05-30 Sony Corporation Charge transfer devices for multiplexing signals
EP0109445A4 (en) * 1982-05-21 1986-01-07 Sony Corp Charge transfer devices for multiplexing signals.
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders
FR2685152A1 (en) * 1991-11-27 1993-06-18 Eev Ltd LOAD COUPLING DEVICE.
US5528642A (en) * 1993-01-21 1996-06-18 Sony Corporation Solid-state imaging device with fast clock speed for improved image quality

Also Published As

Publication number Publication date
HK6480A (en) 1980-03-07
CA1020656A (en) 1977-11-08
JPS49123722A (en) 1974-11-27
JPS55171169U (en) 1980-12-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee