GB1470587A - Linear imaging arrays - Google Patents

Linear imaging arrays

Info

Publication number
GB1470587A
GB1470587A GB3806874A GB3806874A GB1470587A GB 1470587 A GB1470587 A GB 1470587A GB 3806874 A GB3806874 A GB 3806874A GB 3806874 A GB3806874 A GB 3806874A GB 1470587 A GB1470587 A GB 1470587A
Authority
GB
United Kingdom
Prior art keywords
shift register
linear array
light sensors
shifting
phase clock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3806874A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of GB1470587A publication Critical patent/GB1470587A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14825Linear CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1470587 Imaging devices FAIRCHILD CAMERA & INSTRUMENT CORP 30 Aug 1974 [3 Oct 1973] 38068/74 Heading H1K [Also in Division H4] An imaging device comprises a linear array of light sensors 54a-54j, a first shift register 55 on one side of the linear array and including charge storage regions, a first transfer gate 53b for controlling charge transfer from the light sensors 54a-54j to the charge storage regions on a one-to-one basis, and first means for shifting the charges along the shift register 55 to a detector, there being a second similar shift register 56 and charge transfer device on the other side of the linear array. The means for shifting charges along the shift registers 55, 56 includes a two-phase clock source applied to electrodes 55a-55j, 56a-56j alternate ones of which are connected together. The shift register 55 may, alternatively, be addressed by four phase clock pulses. The light sensors 54a-54j are separated by channel stop diffusions 51a-51i, and the device is integrated in a silicon substrate overlaid by silicon dioxide insulation and a transparent gate electrode 52.
GB3806874A 1973-10-03 1974-08-30 Linear imaging arrays Expired GB1470587A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US40324473A 1973-10-03 1973-10-03

Publications (1)

Publication Number Publication Date
GB1470587A true GB1470587A (en) 1977-04-14

Family

ID=23595056

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3806874A Expired GB1470587A (en) 1973-10-03 1974-08-30 Linear imaging arrays

Country Status (7)

Country Link
JP (1) JPS5062786A (en)
CA (1) CA1013454A (en)
DE (1) DE2445490A1 (en)
FR (1) FR2247039B1 (en)
GB (1) GB1470587A (en)
HK (1) HK47380A (en)
NL (1) NL7411507A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180157C (en) * 1975-06-09 1987-01-02 Philips Nv SEMICONDUCTOR IMAGE RECORDING DEVICE.
NL7510311A (en) * 1975-09-02 1977-03-04 Philips Nv LOAD TRANSFER DEVICE.
US4190851A (en) * 1975-09-17 1980-02-26 Hughes Aircraft Company Monolithic extrinsic silicon infrared detectors with charge coupled device readout
JPS5350990A (en) * 1976-10-20 1978-05-09 Fujitsu Ltd Line photo sensor using charge transfer device
JPS5374893A (en) * 1976-12-15 1978-07-03 Fujitsu Ltd Driving method for semiconductor photosensitive device
GB1592373A (en) * 1976-12-30 1981-07-08 Ibm Photodetector
US4281254A (en) * 1979-07-02 1981-07-28 Xerox Corporation Self scanned photosensitive array
DE2939403A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED CIRCUIT FOR LINE SCREENING
US4617471A (en) * 1983-12-27 1986-10-14 Kabushiki Kaisha Toshiba Image sensing device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5443330B2 (en) * 1971-08-26 1979-12-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders

Also Published As

Publication number Publication date
DE2445490A1 (en) 1975-04-17
HK47380A (en) 1980-09-05
CA1013454A (en) 1977-07-05
JPS5062786A (en) 1975-05-28
NL7411507A (en) 1975-04-07
FR2247039B1 (en) 1982-04-16
FR2247039A1 (en) 1975-05-02

Similar Documents

Publication Publication Date Title
US4001878A (en) Charge transfer color imagers
GB1464391A (en) Charge coupled device exposure control
GB1531180A (en) Solid-state imaging devices
GB2065974A (en) Integrated CCD Image Sensor of the Interline Transfer Type
GB1370449A (en) Sensing apparatus and arrays
CA953427A (en) Single device memory system having shift register output characteristics
GB1470587A (en) Linear imaging arrays
JPS54111798A (en) Image sensor of charge transfer type
CA921173A (en) Mis array utilizing field induced junctions
US4540901A (en) Image-sensing charge-coupled device with both high-speed and low-speed read-outs
EP0192142A1 (en) Charge transfer device
GB1414183A (en) Charge coupled devices
US3890633A (en) Charge-coupled circuits
US3935446A (en) Apparatus for sensing radiation and providing electrical readout
KR890002896A (en) Parallel-to-serial converter with CCD shift register
KR970056989A (en) Color linear charge coupled device and driving method thereof
GB1531889A (en) Charge transfer devices
US4649407A (en) Charge coupled device for transferring electric charge
GB1453341A (en) Charge-coupled linear imaging device
JPS5370772A (en) Semiconductor split electrode charge transfer device
JPS51134089A (en) Semiconductor unit
GB1480761A (en) Chargecoupled area array
GB1533001A (en) Semiconductor device
JPS51147280A (en) Semiconductor device
GB1529489A (en) Optoelectronic sensor arrangements

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee