GB1533001A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1533001A
GB1533001A GB52649/75A GB5264975A GB1533001A GB 1533001 A GB1533001 A GB 1533001A GB 52649/75 A GB52649/75 A GB 52649/75A GB 5264975 A GB5264975 A GB 5264975A GB 1533001 A GB1533001 A GB 1533001A
Authority
GB
United Kingdom
Prior art keywords
mis structure
electrode
mis
dec
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB52649/75A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1533001A publication Critical patent/GB1533001A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1533001 Charge coupled imaging device SONY CORP 23 Dec 1975 [25 Dec 1974] 52649/75 Heading H1K An image sensor comprises a first, light sensitive, MIS structure 22, Fig. 5, forming a potential well 33c in which minority carriers 35 generated by incident light are stored, and second and third MIS structures 24, 23 which form apotential barrier 33a and asecond potential wall 33b adjacent the potential wall 33c so that the carriers 35 can be transferred from the MIS structure 22 to the MIS structure 23 through the MIS structure 24, and thence along a shift register 29, Fig. 4, which includes a first electrode 28a and a second electrode 28b overlapping the first electrode. The electrode 26 of the MIS structure 22 may be tin oxide and the elecelectrode 28a polySi covered by an opaque Al layer 34. A further MIS structure 25 is used to prevent saturation of the MIS structure 22.
GB52649/75A 1974-12-25 1975-12-23 Semiconductor device Expired GB1533001A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP753860A JPS5732547B2 (en) 1974-12-25 1974-12-25

Publications (1)

Publication Number Publication Date
GB1533001A true GB1533001A (en) 1978-11-22

Family

ID=11568935

Family Applications (1)

Application Number Title Priority Date Filing Date
GB52649/75A Expired GB1533001A (en) 1974-12-25 1975-12-23 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5732547B2 (en)
CA (1) CA1056058A (en)
DE (1) DE2558337C2 (en)
FR (1) FR2296266A1 (en)
GB (1) GB1533001A (en)
NL (1) NL7515024A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030375A1 (en) * 1979-12-07 1981-06-17 Kabushiki Kaisha Toshiba Solid state image sensor
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2606308C2 (en) 1976-02-17 1985-05-23 Siemens AG, 1000 Berlin und 8000 München Two-dimensional optoelectronic semiconductor sensor
JPS5374893A (en) * 1976-12-15 1978-07-03 Fujitsu Ltd Driving method for semiconductor photosensitive device
DE3044341C2 (en) * 1980-11-25 1984-10-25 Siemens AG, 1000 Berlin und 8000 München Phototransistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IE35581B1 (en) * 1970-09-04 1976-03-31 Gen Electric Semiconductor apparatus for selectively moving electrical charges
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030375A1 (en) * 1979-12-07 1981-06-17 Kabushiki Kaisha Toshiba Solid state image sensor
GB2149963A (en) * 1983-10-07 1985-06-19 Canon Kk Solid state semiconductor device

Also Published As

Publication number Publication date
CA1056058A (en) 1979-06-05
DE2558337C2 (en) 1983-04-14
FR2296266A1 (en) 1976-07-23
DE2558337A1 (en) 1976-07-08
JPS5732547B2 (en) 1982-07-12
FR2296266B1 (en) 1982-09-24
NL7515024A (en) 1976-06-29
JPS5175321A (en) 1976-06-29

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19931223