SU1228129A1 - Photoelectric converter for image feature selection devices - Google Patents

Abstract

The invention relates to the field of automation and computer technology and can be used in image recognition and image processing devices. The purpose of the invention is to expand the range of values of the inherent features. The proposed photoelectric converter contains a semiconductor plate, a pair of point peripheral electrodes, a resistive and dielectric layers, a central point electrode and an external ring electrode. The photoelectric converter circuit includes a load control shaper, an integral illumination measurement unit, differential amplifiers, gain control nodes, and a control shaper. The photoelectric transducer allows you to select the signs of both half-tone (coordinates of the energy center of gravity) and binary (coordinates of the center of the projection gravity) images. I zp f-ly, 2 ill. I (L

Description

The invention relates to automation and computing and can be applied at the normalization stage in image recognition and processing systems, as well as in measurement systems.

The purpose of the invention is to expand the range of values of the signs

Figure 1 shows a diagram of a photoelectric transducer; Fig. 2 shows a photoelectric converter together with one of the possible cs; I eat it.

The photoelectric converter (Fig. 1) contains a semiconductor plate 1, a pair of point peripheral electrodes 2 and 3, a resistive layer 4, a dielectric layer 5, a central point electrode 6 and an outer ring electrode 7. The cross sections of the electrodes are conventionally shown in full blackening, and the cross section of the resistive 4 and dielectric 5 layers - hatching.

A possible circuit for turning on the photoelectric converter (Fig. 2) contains a driver of control voltage 8, a load 9, an integral illumination measurement unit 10, identical differential amplifiers 11 and 12, identical nodes 13 and 14 of the gain control driver control signal shaper 15.

The first two outputs of the control signal generator 15 are connected to the inputs of the control voltage generator 8, and the third output is connected to the control input of the integrated illumination measurement unit 10. The first and second outputs of the control voltage generator 8 are connected respectively to the central point electrode 6 and the outer ring electrode 7. In this case, a signal arriving at one of the inputs of the control voltage generator 8 appears in the form of voltages of the same magnitude and field on both outputs of the imaging unit 8, and the signal arriving at the second input of the imaging device B of control voltages is summed with the voltage of one of the outputs of the imaging device 8 and subtracted from the voltage of the other from the outputs of the imaging device 8, e If this voltage is due to the appearance of a signal at the first input of this driver.

The peripheral electrodes are connected to the differential input of the amplifier 11. A load 9 is connected between the common bus and the base of the semiconductor plate 1. The block 10 is measured. The integral illumination is connected to the load output 9, and the outputs of the unit 10 are connected to the control inputs of both gain control nodes. The differential input of amplifier 12 is connected to a pair of point peripheral electrodes 2 and 3 located orthogonally with respect to point peripheral electrodes connected to the differential inputs of amplifier 1 1 (not shown in figure 2 orthogonally located pair of point peripheral electrodes).

The device works as follows.

In the first cycle, the driver of the control signals 15 generates a square voltage pulse, which arrives at the first input of the driver of the control voltage 8. The voltages from both outputs of the imaging unit 8 are supplied to the central point 6 and external annular 7 electrodes simultaneously. This voltage has a polarity capable of reducing the concentration of the main charge carriers near the interface. Semiconductor plate 1 with a dielectric layer 5. The voltage amplitude must be sufficient to form a surface layer depleted in the main charge carriers.

After the termination of the specified im-. pulse all minor charge carriers accumulated in the surface layer are injected into semiconductor wafer 1 where they are recombined

The effect of the signal on the load 9. Minority charge carriers during the duration of the depletion voltage pulse are generated by radiation, which forms the analyzed image and passes into the semiconductor plate 1 through resistive 4 and dielectric layers 5. The signals at load 9 in this case correspond to the integral illumination. In block 10, this signal is amplified and remains unchanged during the time of the selection of subsequent prizes, arriving at the inputs of the nodes 13 and 14 of the gain control.

In the second cycle, the signals from the driver 15 are received at both inputs of the driver of the 8 voltages, as a result of which the voltages j applied to the central point 6 and the outer ring electrode 7 differ in magnitude. In the subsurface layer of the semiconductor wafer 1, depleted in the main carriers, a radial electric field arises that modulates the concentration of minority carriers, so that between the peripheral transducer electrodes 2 and 3 there appears a voltage proportional to the two-dimensional moment of the first order from the analyzed image. At the exit . the amplifier 11 generates a signal corresponding to the coordinate of the image power center

and

JxI (x,

 l

  jUx.yldxdij

Y:

A signal corresponding to feature o} is formed in a similar manner simultaneously with a signal corresponding to X o.

 Thus, on the whole, the photoelectric converter allows to select signals corresponding to the following image features - integral illumination (two-dimensional moment of zero order), two-dimensional moments of the first order in both Cartesian coordinates, and also coordinates of the energy center of image gravity in both Cartesian coordinates at the same time. The maximum value of the released features is limited by non-fundamental physical parameters (diffusion length of minor carrier carriers LO) technological limitations - the size of the dielectric film 5, which can be made without punctures. According to the MIS technology, this size can reach 100-120 mm (the size of semiconductor billet plates coated with an oxide layer and manufactured commercially).

The resistive layer 4 of the photoelectric converter can be made of any translucent semiconductor materials, for example, CdS, ZnOg, etc., or from a thin layer of metal, for example gold. Electric resistance

10 between central 6 and external 7

electrodes can lie in the range of 100 ohms - 10 kΩ. The semiconductor wafer can be made of germanium, silicon, arsenide, galvanium oxide, or other semiconductor materials on which a thin dielectric layer can be applied.

Photoelectric converter for feature extraction devices

20 images allows to select features of both half-tone (coordinates of the energy center of gravity) and binary (coordinates of the center of t - image tin of the image projection) of the image

25 the same.

Claims (2)

1. A photoelectric converter for devices for imaging prism, containing a semiconductor plate, a central point electrode, an outer ring electrode, and a pair of point peripheral electrodes located on 35, a semiconductor plate inside the outer ring electrode, which is characterized by the fact that the dielectric and resistive layers are sequentially arranged on the semiconductor plate, with the central point electrode and the outer ring electrode on the resistive layer. 2. A transducer according to claim 1, characterized in that the resistive layer is translucent.  2 f V g. 7 / (/) M Editor N. Shvydka Compiled by B, Kiselev Tehred M. Khodanich Proofreader E. Roshko Order 2289/51 Circulation 671 Subscription VNIIPI USSR State Committee for inventions and discoveries 113035, Moscow, Zh-35, Raushsk nab., 4/5 Production and printing company, Uzhgorod, st. Project, 4