JPS5732547B2 - - Google Patents
Info
- Publication number
- JPS5732547B2 JPS5732547B2 JP753860A JP386075A JPS5732547B2 JP S5732547 B2 JPS5732547 B2 JP S5732547B2 JP 753860 A JP753860 A JP 753860A JP 386075 A JP386075 A JP 386075A JP S5732547 B2 JPS5732547 B2 JP S5732547B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP753860A JPS5732547B2 (en) | 1974-12-25 | 1974-12-25 | |
DE2558337A DE2558337C2 (en) | 1974-12-25 | 1975-12-23 | Semiconductor image sensor working according to the principle of charge transfer |
NL7515024A NL7515024A (en) | 1974-12-25 | 1975-12-23 | SEMI-CONDUCTOR DEVICE, MORE PARTICULARLY AS IMAGE RECORDING DEVICE. |
GB52649/75A GB1533001A (en) | 1974-12-25 | 1975-12-23 | Semiconductor device |
CA242,395A CA1056058A (en) | 1974-12-25 | 1975-12-23 | Semiconductor image sensor having ccd shift register |
FR7539766A FR2296266A1 (en) | 1974-12-25 | 1975-12-24 | SEMICONDUCTOR IMAGE SENSOR WITH LOAD-COUPLING OFFSET REGISTERS |
US05/825,706 US4194213A (en) | 1974-12-25 | 1977-08-18 | Semiconductor image sensor having CCD shift register |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP753860A JPS5732547B2 (en) | 1974-12-25 | 1974-12-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5175321A JPS5175321A (en) | 1976-06-29 |
JPS5732547B2 true JPS5732547B2 (en) | 1982-07-12 |
Family
ID=11568935
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP753860A Expired JPS5732547B2 (en) | 1974-12-25 | 1974-12-25 |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS5732547B2 (en) |
CA (1) | CA1056058A (en) |
DE (1) | DE2558337C2 (en) |
FR (1) | FR2296266A1 (en) |
GB (1) | GB1533001A (en) |
NL (1) | NL7515024A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2606308C2 (en) | 1976-02-17 | 1985-05-23 | Siemens AG, 1000 Berlin und 8000 München | Two-dimensional optoelectronic semiconductor sensor |
JPS5374893A (en) * | 1976-12-15 | 1978-07-03 | Fujitsu Ltd | Driving method for semiconductor photosensitive device |
JPS606147B2 (en) * | 1979-12-07 | 1985-02-15 | 株式会社東芝 | solid state imaging device |
DE3044341C2 (en) * | 1980-11-25 | 1984-10-25 | Siemens AG, 1000 Berlin und 8000 München | Phototransistor |
JPS6080272A (en) * | 1983-10-07 | 1985-05-08 | Canon Inc | Charge transfer element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946625A (en) * | 1972-07-10 | 1974-05-04 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE35581B1 (en) * | 1970-09-04 | 1976-03-31 | Gen Electric | Semiconductor apparatus for selectively moving electrical charges |
-
1974
- 1974-12-25 JP JP753860A patent/JPS5732547B2/ja not_active Expired
-
1975
- 1975-12-23 GB GB52649/75A patent/GB1533001A/en not_active Expired
- 1975-12-23 CA CA242,395A patent/CA1056058A/en not_active Expired
- 1975-12-23 NL NL7515024A patent/NL7515024A/en not_active Application Discontinuation
- 1975-12-23 DE DE2558337A patent/DE2558337C2/en not_active Expired
- 1975-12-24 FR FR7539766A patent/FR2296266A1/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946625A (en) * | 1972-07-10 | 1974-05-04 |
Also Published As
Publication number | Publication date |
---|---|
FR2296266A1 (en) | 1976-07-23 |
DE2558337A1 (en) | 1976-07-08 |
FR2296266B1 (en) | 1982-09-24 |
CA1056058A (en) | 1979-06-05 |
DE2558337C2 (en) | 1983-04-14 |
GB1533001A (en) | 1978-11-22 |
NL7515024A (en) | 1976-06-29 |
JPS5175321A (en) | 1976-06-29 |