GB1414228A - Semiconductor storage devices - Google Patents

Semiconductor storage devices

Info

Publication number
GB1414228A
GB1414228A GB1091073A GB1091073A GB1414228A GB 1414228 A GB1414228 A GB 1414228A GB 1091073 A GB1091073 A GB 1091073A GB 1091073 A GB1091073 A GB 1091073A GB 1414228 A GB1414228 A GB 1414228A
Authority
GB
United Kingdom
Prior art keywords
electrode
electrodes
storage
charge
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1091073A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US24730072A priority Critical
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1414228A publication Critical patent/GB1414228A/en
Application status is Expired legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/108Dynamic random access memory structures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices

Abstract

1414228 Semi-conductor charge-coupled devices INTERNATIONAL BUSINESS MACHINES CORP 6 March 1973 [25 April 1972] 10910/73 Heading H1K Optical read-out from a charge-coupled storage device is obtained by the provision of a "charge recombination electrode" 28 adjacent the charge storage electrode 24. Minority charges stored beneath the storage electrode 24 are transferred to the area beneath the recombination electrode 28 by appropriate potentials on the electrodes 24, 28 and then recombine with majority carriers with the omission of light when the potential on electrode 28 is changed so as to release them. The minority carriers are intially provided beneath the storage electrode 28 by suitable manipulation of potentials on the electrode 28, a gate electrode 19 and an injection region 12. The embodiment illustrated is a random access memory array in an N type GaAs or GaP substrate 10, the array having P<SP>+</SP> diffused bit lines, word lines 16 to gate electrodes 19, word hold lines 20 to storage electrodes 24, and sense decode and drive lines to recombination electrodes 28. Light emission (indicating a "1" read-out) from each memory cell is detected by a corresponding detector 48, which may be a GaAs or PbS photoconductor or a Si PN or PIN diode. In a modification (Figs. 4-6, not shown) the recombinative electrode (52) is of doped polycrystalline semi-conductor and the gate and storage electrodes (55, 56) are parts of a common metal layer (54), the latter part being spaced from the substrate (10) by a thinner insulating layer than the former. A further embodiment is a shift register in which polycrystalline semi-conductor storage electrodes (99), Figs. 7 and 8 (not shown), alternate with metal gate electrodes (101).
GB1091073A 1972-04-25 1973-03-06 Semiconductor storage devices Expired GB1414228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US24730072A true 1972-04-25 1972-04-25

Publications (1)

Publication Number Publication Date
GB1414228A true GB1414228A (en) 1975-11-19

Family

ID=22934384

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1091073A Expired GB1414228A (en) 1972-04-25 1973-03-06 Semiconductor storage devices

Country Status (10)

Country Link
JP (1) JPS5212073B2 (en)
CA (1) CA1003106A (en)
CH (1) CH546461A (en)
DE (1) DE2319714A1 (en)
ES (1) ES413258A1 (en)
FR (1) FR2181850B1 (en)
GB (1) GB1414228A (en)
IT (1) IT979035B (en)
NL (1) NL7305263A (en)
SE (1) SE389573B (en)

Cited By (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1351307A1 (en) * 2002-03-28 2003-10-08 Ecole Polytechnique Fédérale de Lausanne (EPFL) Method of driving a semiconductor device
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US7732816B2 (en) 2001-06-18 2010-06-08 Innovative Silicon Isi Sa Semiconductor device
US7733693B2 (en) 2003-05-13 2010-06-08 Innovative Silicon Isi Sa Semiconductor memory device and method of operating same
US7736959B2 (en) 2003-07-22 2010-06-15 Innovative Silicon Isi Sa Integrated circuit device, and method of fabricating same
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US7933142B2 (en) 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US7940559B2 (en) 2006-04-07 2011-05-10 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7969779B2 (en) 2006-07-11 2011-06-28 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells
US8873283B2 (en) 2005-09-07 2014-10-28 Micron Technology, Inc. Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5428578A (en) * 1977-08-08 1979-03-03 Clarion Co Ltd Semiconductor memory

Cited By (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7732816B2 (en) 2001-06-18 2010-06-08 Innovative Silicon Isi Sa Semiconductor device
EP1351307A1 (en) * 2002-03-28 2003-10-08 Ecole Polytechnique Fédérale de Lausanne (EPFL) Method of driving a semiconductor device
US7733693B2 (en) 2003-05-13 2010-06-08 Innovative Silicon Isi Sa Semiconductor memory device and method of operating same
US7736959B2 (en) 2003-07-22 2010-06-15 Innovative Silicon Isi Sa Integrated circuit device, and method of fabricating same
US8873283B2 (en) 2005-09-07 2014-10-28 Micron Technology, Inc. Memory cell and memory cell array having an electrically floating body transistor, and methods of operating same
US7683430B2 (en) 2005-12-19 2010-03-23 Innovative Silicon Isi Sa Electrically floating body memory cell and array, and method of operating or controlling same
US8134867B2 (en) 2006-04-07 2012-03-13 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US7940559B2 (en) 2006-04-07 2011-05-10 Micron Technology, Inc. Memory array having a programmable word length, and method of operating same
US8295078B2 (en) 2006-05-02 2012-10-23 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US7933142B2 (en) 2006-05-02 2011-04-26 Micron Technology, Inc. Semiconductor memory cell and array using punch-through to program and read same
US8069377B2 (en) 2006-06-26 2011-11-29 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating the same
US8402326B2 (en) 2006-06-26 2013-03-19 Micron Technology, Inc. Integrated circuit having memory array including ECC and column redundancy and method of operating same
US8395937B2 (en) 2006-07-11 2013-03-12 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US7969779B2 (en) 2006-07-11 2011-06-28 Micron Technology, Inc. Integrated circuit including memory array having a segmented bit line architecture and method of controlling and/or operating same
US8264041B2 (en) 2007-01-26 2012-09-11 Micron Technology, Inc. Semiconductor device with electrically floating body
US8492209B2 (en) 2007-01-26 2013-07-23 Micron Technology, Inc. Semiconductor device with electrically floating body
US8796770B2 (en) 2007-01-26 2014-08-05 Micron Technology, Inc. Semiconductor device with electrically floating body
US9276000B2 (en) 2007-03-29 2016-03-01 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8518774B2 (en) 2007-03-29 2013-08-27 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US8659956B2 (en) 2007-05-30 2014-02-25 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8064274B2 (en) 2007-05-30 2011-11-22 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US9257155B2 (en) 2007-05-30 2016-02-09 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US8085594B2 (en) 2007-06-01 2011-12-27 Micron Technology, Inc. Reading technique for memory cell with electrically floating body transistor
US8659948B2 (en) 2007-06-01 2014-02-25 Micron Technology, Inc. Techniques for reading a memory cell with electrically floating body transistor
US8194487B2 (en) 2007-09-17 2012-06-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8446794B2 (en) 2007-09-17 2013-05-21 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8797819B2 (en) 2007-09-17 2014-08-05 Micron Technology, Inc. Refreshing data of memory cells with electrically floating body transistors
US8536628B2 (en) 2007-11-29 2013-09-17 Micron Technology, Inc. Integrated circuit having memory cell array including barriers, and method of manufacturing same
US10304837B2 (en) 2007-11-29 2019-05-28 Ovonyx Memory Technology, Llc Integrated circuit having memory cell array including barriers, and method of manufacturing same
US8349662B2 (en) 2007-12-11 2013-01-08 Micron Technology, Inc. Integrated circuit having memory cell array, and method of manufacturing same
US9019788B2 (en) 2008-01-24 2015-04-28 Micron Technology, Inc. Techniques for accessing memory cells
US8325515B2 (en) 2008-02-06 2012-12-04 Micron Technology, Inc. Integrated circuit device
US8014195B2 (en) 2008-02-06 2011-09-06 Micron Technology, Inc. Single transistor memory cell
US8189376B2 (en) 2008-02-08 2012-05-29 Micron Technology, Inc. Integrated circuit having memory cells including gate material having high work function, and method of manufacturing same
US8274849B2 (en) 2008-04-04 2012-09-25 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US7957206B2 (en) 2008-04-04 2011-06-07 Micron Technology, Inc. Read circuitry for an integrated circuit having memory cells and/or a memory cell array, and method of operating same
US8790968B2 (en) 2008-09-25 2014-07-29 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US9553186B2 (en) 2008-09-25 2017-01-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7947543B2 (en) 2008-09-25 2011-05-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US7933140B2 (en) 2008-10-02 2011-04-26 Micron Technology, Inc. Techniques for reducing a voltage swing
US8315083B2 (en) 2008-10-02 2012-11-20 Micron Technology Inc. Techniques for reducing a voltage swing
US7924630B2 (en) 2008-10-15 2011-04-12 Micron Technology, Inc. Techniques for simultaneously driving a plurality of source lines
US8223574B2 (en) 2008-11-05 2012-07-17 Micron Technology, Inc. Techniques for block refreshing a semiconductor memory device
US8213226B2 (en) 2008-12-05 2012-07-03 Micron Technology, Inc. Vertical transistor memory cell and array
US8319294B2 (en) 2009-02-18 2012-11-27 Micron Technology, Inc. Techniques for providing a source line plane
US9064730B2 (en) 2009-03-04 2015-06-23 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8710566B2 (en) 2009-03-04 2014-04-29 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US8748959B2 (en) 2009-03-31 2014-06-10 Micron Technology, Inc. Semiconductor memory device
US9093311B2 (en) 2009-03-31 2015-07-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8400811B2 (en) 2009-04-27 2013-03-19 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines
US9425190B2 (en) 2009-04-27 2016-08-23 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8861247B2 (en) 2009-04-27 2014-10-14 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US8351266B2 (en) 2009-04-27 2013-01-08 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8508994B2 (en) 2009-04-30 2013-08-13 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8792276B2 (en) 2009-04-30 2014-07-29 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8498157B2 (en) 2009-05-22 2013-07-30 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8982633B2 (en) 2009-05-22 2015-03-17 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9331083B2 (en) 2009-07-10 2016-05-03 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8817534B2 (en) 2009-07-10 2014-08-26 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8537610B2 (en) 2009-07-10 2013-09-17 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8947965B2 (en) 2009-07-27 2015-02-03 Micron Technology Inc. Techniques for providing a direct injection semiconductor memory device
US9076543B2 (en) 2009-07-27 2015-07-07 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9679612B2 (en) 2009-07-27 2017-06-13 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8964461B2 (en) 2009-07-27 2015-02-24 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8315099B2 (en) 2009-07-27 2012-11-20 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8199595B2 (en) 2009-09-04 2012-06-12 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US9812179B2 (en) 2009-11-24 2017-11-07 Ovonyx Memory Technology, Llc Techniques for reducing disturbance in a semiconductor memory device
US8760906B2 (en) 2009-11-24 2014-06-24 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor memory device
US8699289B2 (en) 2009-11-24 2014-04-15 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor memory device
US8174881B2 (en) 2009-11-24 2012-05-08 Micron Technology, Inc. Techniques for reducing disturbance in a semiconductor device
US8310893B2 (en) 2009-12-16 2012-11-13 Micron Technology, Inc. Techniques for reducing impact of array disturbs in a semiconductor memory device
US8416636B2 (en) 2010-02-12 2013-04-09 Micron Technology, Inc. Techniques for controlling a semiconductor memory device
US8411513B2 (en) 2010-03-04 2013-04-02 Micron Technology, Inc. Techniques for providing a semiconductor memory device having hierarchical bit lines
US8576631B2 (en) 2010-03-04 2013-11-05 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8964479B2 (en) 2010-03-04 2015-02-24 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8369177B2 (en) 2010-03-05 2013-02-05 Micron Technology, Inc. Techniques for reading from and/or writing to a semiconductor memory device
US9524971B2 (en) 2010-03-15 2016-12-20 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9019759B2 (en) 2010-03-15 2015-04-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8547738B2 (en) 2010-03-15 2013-10-01 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8630126B2 (en) 2010-05-06 2014-01-14 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9142264B2 (en) 2010-05-06 2015-09-22 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US8411524B2 (en) 2010-05-06 2013-04-02 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9263133B2 (en) 2011-05-17 2016-02-16 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US8531878B2 (en) 2011-05-17 2013-09-10 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
US8773933B2 (en) 2012-03-16 2014-07-08 Micron Technology, Inc. Techniques for accessing memory cells

Also Published As

Publication number Publication date
DE2319714A1 (en) 1973-11-15
CH546461A (en) 1974-02-28
CA1003106A (en) 1977-01-04
ES413258A1 (en) 1976-01-01
IT979035B (en) 1974-09-30
SE389573B (en) 1976-11-08
JPS5212073B2 (en) 1977-04-04
FR2181850A1 (en) 1973-12-07
NL7305263A (en) 1973-10-29
CA1003106A1 (en)
FR2181850B1 (en) 1978-05-26
JPS4922882A (en) 1974-02-28

Similar Documents

Publication Publication Date Title
US5350938A (en) Nonvolatile semiconductor memory circuit with high speed read-out
US5506436A (en) Semiconductor memory cell
US4233672A (en) High-speed semiconductor device
US7459740B2 (en) Integrated DRAM-NVRAM multi-level memory
US7485513B2 (en) One-device non-volatile random access memory cell
EP0655788B1 (en) A volatile memory cell
US3881180A (en) Non-volatile memory cell
US4003036A (en) Single IGFET memory cell with buried storage element
US6917078B2 (en) One transistor SOI non-volatile random access memory cell
US6936886B2 (en) High density SRAM cell with latched vertical transistors
US4715685A (en) Liquid crystal display having potential source in a diode ring
US20050237786A1 (en) Semiconductor memories
US8514623B2 (en) Method of maintaining the state of semiconductor memory having electrically floating body transistor
US8445946B2 (en) Gated diode memory cells
EP0717413A2 (en) Memory cell and wordline driver for embedded dram in ASIC process
US6545297B1 (en) High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown
US3660697A (en) Monolithic semiconductor apparatus adapted for sequential charge transfer
CA1163714A (en) One device field effect transistor (fet) ac stable random access memory (ram) array
US4250569A (en) Semiconductor memory device
US3469155A (en) Punch-through means integrated with mos type devices for protection against insulation layer breakdown
US4994999A (en) High-speed and high-density semiconductor memory
US3792465A (en) Charge transfer solid state display
EP0015675B1 (en) Semiconductor memory device
US5909400A (en) Three device BICMOS gain cell
US4164751A (en) High capacity dynamic ram cell

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee