JPS6467959A - Solid-state image sensing device - Google Patents

Solid-state image sensing device

Info

Publication number
JPS6467959A
JPS6467959A JP62225032A JP22503287A JPS6467959A JP S6467959 A JPS6467959 A JP S6467959A JP 62225032 A JP62225032 A JP 62225032A JP 22503287 A JP22503287 A JP 22503287A JP S6467959 A JPS6467959 A JP S6467959A
Authority
JP
Japan
Prior art keywords
region
charge transfer
charge
transfer means
fda
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62225032A
Other languages
Japanese (ja)
Inventor
Masahiko Denda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62225032A priority Critical patent/JPS6467959A/en
Publication of JPS6467959A publication Critical patent/JPS6467959A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To reduce the capacity of an FDA, to obtain the FDA having a high gain and to obtain a dynamic range by providing means for removing a predetermined charge between first charge transfer means and second charge transfer means. CONSTITUTION:An N<+> type vertical charge transfer region 22 and a horizontal charge transfer means 32 are respectively formed along predetermined directions on a P-type semiconductor substrate 73. An N<+> type drain region 64 is formed separately from the region 22 along a perpendicular direction to the above predetermined direction on the substrate 73. A control gate electrode 63 is formed through a gate oxide film 72 on a region between the region 22 and the region 64. Here, a control gate electrode 63 applies a signal charge transmitted through the region 22 to the region 32, and the gate 63 discharges an unnecessary charge corresponding to a background light to the region 64.
JP62225032A 1987-09-08 1987-09-08 Solid-state image sensing device Pending JPS6467959A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62225032A JPS6467959A (en) 1987-09-08 1987-09-08 Solid-state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62225032A JPS6467959A (en) 1987-09-08 1987-09-08 Solid-state image sensing device

Publications (1)

Publication Number Publication Date
JPS6467959A true JPS6467959A (en) 1989-03-14

Family

ID=16822991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62225032A Pending JPS6467959A (en) 1987-09-08 1987-09-08 Solid-state image sensing device

Country Status (1)

Country Link
JP (1) JPS6467959A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989456A (en) * 1982-11-15 1984-05-23 Toshiba Corp Solid-state image pick-up device
JPS60244063A (en) * 1984-05-18 1985-12-03 Nec Corp Solid-state image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989456A (en) * 1982-11-15 1984-05-23 Toshiba Corp Solid-state image pick-up device
JPS60244063A (en) * 1984-05-18 1985-12-03 Nec Corp Solid-state image pickup element

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