JPS5735483A - Solidstate image sensor - Google Patents

Solidstate image sensor

Info

Publication number
JPS5735483A
JPS5735483A JP10962380A JP10962380A JPS5735483A JP S5735483 A JPS5735483 A JP S5735483A JP 10962380 A JP10962380 A JP 10962380A JP 10962380 A JP10962380 A JP 10962380A JP S5735483 A JPS5735483 A JP S5735483A
Authority
JP
Japan
Prior art keywords
regions
image sensor
beneath
given
stored electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10962380A
Other languages
Japanese (ja)
Other versions
JPS6340389B2 (en
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10962380A priority Critical patent/JPS5735483A/en
Publication of JPS5735483A publication Critical patent/JPS5735483A/en
Publication of JPS6340389B2 publication Critical patent/JPS6340389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To realize a photosensing plane having high density, by forming a picture element group having mutually different impurity concentration directly under a stored electrode. CONSTITUTION:Especially, any processing is given to a region 24a beneath a stored electrode 2Y for a video element 24, but impurity dope 31 by injection of boron is given to regions 21a-23a beneath the stored electrode 2Y for video elements 21- 23, and the impurity concentration is decreased in the order of the regions 21a- 23a. The threshold voltage at the regions 21a-23a is shifted toward positive voltage in order.
JP10962380A 1980-08-09 1980-08-09 Solidstate image sensor Granted JPS5735483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10962380A JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10962380A JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Publications (2)

Publication Number Publication Date
JPS5735483A true JPS5735483A (en) 1982-02-26
JPS6340389B2 JPS6340389B2 (en) 1988-08-10

Family

ID=14514975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10962380A Granted JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5735483A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953419U (en) * 1982-09-29 1984-04-07 株式会社ヨシタケ製作所 Liquid pressure reducing valve
JPS63163505U (en) * 1987-04-14 1988-10-25
JPH02104407U (en) * 1989-02-01 1990-08-20

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953419U (en) * 1982-09-29 1984-04-07 株式会社ヨシタケ製作所 Liquid pressure reducing valve
JPS647372Y2 (en) * 1982-09-29 1989-02-28
JPS63163505U (en) * 1987-04-14 1988-10-25
JPH02104407U (en) * 1989-02-01 1990-08-20

Also Published As

Publication number Publication date
JPS6340389B2 (en) 1988-08-10

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