JPS5632776A - Ccd image sensor - Google Patents

Ccd image sensor

Info

Publication number
JPS5632776A
JPS5632776A JP10786279A JP10786279A JPS5632776A JP S5632776 A JPS5632776 A JP S5632776A JP 10786279 A JP10786279 A JP 10786279A JP 10786279 A JP10786279 A JP 10786279A JP S5632776 A JPS5632776 A JP S5632776A
Authority
JP
Japan
Prior art keywords
charge
ccd
image sensor
conductivity type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10786279A
Other languages
Japanese (ja)
Inventor
Tomoji Dobashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP10786279A priority Critical patent/JPS5632776A/en
Publication of JPS5632776A publication Critical patent/JPS5632776A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14825—Linear CCD imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To contrive the reduction in dark current in the CCD image sensor by forming a charge concentration region in a channel stopper for abosrbing charge becoming noise. CONSTITUTION:There is formed the channel stopper 11 doped in large amount of impurity of the same conductivity type as the substrate to surround the portion to be formed with the image sensor of one conductivity type semiconductor substrate. There is formed the charge concentration region 12 doped with reverse conductivity type impurity to the substrate in the channel stopper 11. To the region 12 is applied a voltage forming a deeper potential than the potential of the CCD portion 5 to thus form a deep potential. When an image is picked up in this state, photocharge from a photodetector 1 is fed through a channel 4 to the CCD portion 5, and is in turn fed to the output portion 6. On the other hand, the charge oozed out of the periphery of the CCD portion 5 is attracted to the region 12, but does not enter the CCD portion 5. Accordingly, the charge transferred at the CCD portion 5 is only the photocharge containing no charge becoming noize, and a dark current can be thus remarkably reduced.
JP10786279A 1979-08-23 1979-08-23 Ccd image sensor Pending JPS5632776A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10786279A JPS5632776A (en) 1979-08-23 1979-08-23 Ccd image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10786279A JPS5632776A (en) 1979-08-23 1979-08-23 Ccd image sensor

Publications (1)

Publication Number Publication Date
JPS5632776A true JPS5632776A (en) 1981-04-02

Family

ID=14469949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10786279A Pending JPS5632776A (en) 1979-08-23 1979-08-23 Ccd image sensor

Country Status (1)

Country Link
JP (1) JPS5632776A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074475A (en) * 1983-09-29 1985-04-26 Sony Corp Solid state image pickup element
US6806522B2 (en) 2000-09-28 2004-10-19 Nec Electronics Corporation CMOS image sensor and manufacturing method for the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966082A (en) * 1972-09-11 1974-06-26

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4966082A (en) * 1972-09-11 1974-06-26

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074475A (en) * 1983-09-29 1985-04-26 Sony Corp Solid state image pickup element
JPH0527271B2 (en) * 1983-09-29 1993-04-20 Sony Corp
US6806522B2 (en) 2000-09-28 2004-10-19 Nec Electronics Corporation CMOS image sensor and manufacturing method for the same

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