JPS4966082A - - Google Patents
Info
- Publication number
- JPS4966082A JPS4966082A JP48102578A JP10257873A JPS4966082A JP S4966082 A JPS4966082 A JP S4966082A JP 48102578 A JP48102578 A JP 48102578A JP 10257873 A JP10257873 A JP 10257873A JP S4966082 A JPS4966082 A JP S4966082A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28786072A | 1972-09-11 | 1972-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4966082A true JPS4966082A (en) | 1974-06-26 |
JPS5122356B2 JPS5122356B2 (en) | 1976-07-09 |
Family
ID=23104672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP48102578A Expired JPS5122356B2 (en) | 1972-09-11 | 1973-09-11 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS5122356B2 (en) |
DE (1) | DE2345784C3 (en) |
FR (1) | FR2199200B1 (en) |
GB (1) | GB1443718A (en) |
NL (1) | NL7312152A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51131279A (en) * | 1975-05-08 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Electric charge combination element |
JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
JPS5220771A (en) * | 1975-08-09 | 1977-02-16 | Matsushita Electric Ind Co Ltd | Manufacturing method of semi-conductor unit |
JPS5412582A (en) * | 1977-06-29 | 1979-01-30 | Hitachi Ltd | Semiconductor device |
JPS5429519A (en) * | 1977-08-09 | 1979-03-05 | Fujitsu Ltd | Semiconductor pick up device |
JPS5435695A (en) * | 1977-08-22 | 1979-03-15 | Texas Instruments Inc | Method of producing split gate electrode antiiblooming structure |
JPS54144184A (en) * | 1978-05-02 | 1979-11-10 | Ibm | Field effect type device |
JPS559532U (en) * | 1978-06-30 | 1980-01-22 | ||
JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
JPS60163876U (en) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | semiconductor imaging device |
JPS60246673A (en) * | 1984-05-22 | 1985-12-06 | Nec Corp | Solid-state image pickup element |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1522487A (en) * | 1974-08-29 | 1978-08-23 | Sony Corp | Solid state colour television cameras |
FR2462828B1 (en) * | 1979-07-25 | 1985-09-27 | Rca Corp | METHOD FOR MANUFACTURING IMAGING DEVICES WITH THINNED SUBSTRATE FOR TELEVISION ANALYZER TUBE FOR EXAMPLE |
US4577115A (en) * | 1982-11-08 | 1986-03-18 | Rca Corporation | Apparatus for sensing transient phenomena in radiant energy images |
FR2578683B1 (en) * | 1985-03-08 | 1987-08-28 | Thomson Csf | METHOD FOR MANUFACTURING AN ANTI-GLARE DIODE ASSOCIATED WITH A CHANNEL ON THE SURFACE, AND ANTI-GLARE SYSTEM OBTAINED BY THIS METHOD |
GB2413007A (en) * | 2004-04-07 | 2005-10-12 | E2V Tech Uk Ltd | Multiplication register for amplifying signal charge |
-
1973
- 1973-09-04 NL NL7312152A patent/NL7312152A/xx unknown
- 1973-09-05 GB GB4174973A patent/GB1443718A/en not_active Expired
- 1973-09-11 DE DE2345784A patent/DE2345784C3/en not_active Expired
- 1973-09-11 JP JP48102578A patent/JPS5122356B2/ja not_active Expired
- 1973-09-11 FR FR7332675A patent/FR2199200B1/fr not_active Expired
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51131279A (en) * | 1975-05-08 | 1976-11-15 | Matsushita Electric Ind Co Ltd | Electric charge combination element |
JPS5724664B2 (en) * | 1975-05-26 | 1982-05-25 | ||
JPS51138175A (en) * | 1975-05-26 | 1976-11-29 | Fujitsu Ltd | Method of manufacturing charge coupled device |
JPS5220771A (en) * | 1975-08-09 | 1977-02-16 | Matsushita Electric Ind Co Ltd | Manufacturing method of semi-conductor unit |
JPS5915498B2 (en) * | 1975-08-09 | 1984-04-10 | 松下電器産業株式会社 | Manufacturing method of semiconductor device |
JPS5412582A (en) * | 1977-06-29 | 1979-01-30 | Hitachi Ltd | Semiconductor device |
JPS5429519A (en) * | 1977-08-09 | 1979-03-05 | Fujitsu Ltd | Semiconductor pick up device |
JPS5435695A (en) * | 1977-08-22 | 1979-03-15 | Texas Instruments Inc | Method of producing split gate electrode antiiblooming structure |
JPS54144184A (en) * | 1978-05-02 | 1979-11-10 | Ibm | Field effect type device |
JPS559532U (en) * | 1978-06-30 | 1980-01-22 | ||
JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
JPS60246673A (en) * | 1984-05-22 | 1985-12-06 | Nec Corp | Solid-state image pickup element |
JPS60163876U (en) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | semiconductor imaging device |
Also Published As
Publication number | Publication date |
---|---|
FR2199200A1 (en) | 1974-04-05 |
DE2345784C3 (en) | 1979-05-23 |
DE2345784B2 (en) | 1976-12-16 |
DE2345784A1 (en) | 1974-03-21 |
NL7312152A (en) | 1974-03-13 |
FR2199200B1 (en) | 1977-09-23 |
GB1443718A (en) | 1976-07-21 |
JPS5122356B2 (en) | 1976-07-09 |