JPS5724664B2 - - Google Patents
Info
- Publication number
- JPS5724664B2 JPS5724664B2 JP6184175A JP6184175A JPS5724664B2 JP S5724664 B2 JPS5724664 B2 JP S5724664B2 JP 6184175 A JP6184175 A JP 6184175A JP 6184175 A JP6184175 A JP 6184175A JP S5724664 B2 JPS5724664 B2 JP S5724664B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823406—Combination of charge coupled devices, i.e. CCD, or BBD
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6184175A JPS51138175A (en) | 1975-05-26 | 1975-05-26 | Method of manufacturing charge coupled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6184175A JPS51138175A (en) | 1975-05-26 | 1975-05-26 | Method of manufacturing charge coupled device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS51138175A JPS51138175A (en) | 1976-11-29 |
| JPS5724664B2 true JPS5724664B2 (en) | 1982-05-25 |
Family
ID=13182707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6184175A Granted JPS51138175A (en) | 1975-05-26 | 1975-05-26 | Method of manufacturing charge coupled device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51138175A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4097885A (en) * | 1976-10-15 | 1978-06-27 | Fairchild Camera And Instrument Corp. | Compact, two-phase charge-coupled-device structure utilizing multiple layers of conductive material |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4966082A (en) * | 1972-09-11 | 1974-06-26 |
-
1975
- 1975-05-26 JP JP6184175A patent/JPS51138175A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4966082A (en) * | 1972-09-11 | 1974-06-26 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS51138175A (en) | 1976-11-29 |