JPS5220771A - Manufacturing method of semi-conductor unit - Google Patents

Manufacturing method of semi-conductor unit

Info

Publication number
JPS5220771A
JPS5220771A JP9685975A JP9685975A JPS5220771A JP S5220771 A JPS5220771 A JP S5220771A JP 9685975 A JP9685975 A JP 9685975A JP 9685975 A JP9685975 A JP 9685975A JP S5220771 A JPS5220771 A JP S5220771A
Authority
JP
Japan
Prior art keywords
semi
manufacturing
conductor unit
conductor
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9685975A
Other languages
Japanese (ja)
Other versions
JPS5915498B2 (en
Inventor
Takashi Osone
Shiro Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50096859A priority Critical patent/JPS5915498B2/en
Publication of JPS5220771A publication Critical patent/JPS5220771A/en
Publication of JPS5915498B2 publication Critical patent/JPS5915498B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:Development of a high density and high speed semi-conductor by reducing the width and the gap of the silicone layer.
JP50096859A 1975-08-09 1975-08-09 Manufacturing method of semiconductor device Expired JPS5915498B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50096859A JPS5915498B2 (en) 1975-08-09 1975-08-09 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50096859A JPS5915498B2 (en) 1975-08-09 1975-08-09 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5220771A true JPS5220771A (en) 1977-02-16
JPS5915498B2 JPS5915498B2 (en) 1984-04-10

Family

ID=14176185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50096859A Expired JPS5915498B2 (en) 1975-08-09 1975-08-09 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5915498B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240873A (en) * 1991-09-14 1993-08-31 Gold Star Electronics Method of making charge transfer device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (en) * 1972-01-27 1973-09-17
JPS4914792A (en) * 1972-04-14 1974-02-08
JPS4966082A (en) * 1972-09-11 1974-06-26
JPS49114374A (en) * 1973-02-28 1974-10-31
JPS49114375A (en) * 1973-02-28 1974-10-31
JPS5146078A (en) * 1974-10-18 1976-04-20 Hitachi Ltd EMUAIESUGATAHANDOTAISHUSEKIKAIROSOCHINO SEIHO

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4868177A (en) * 1972-01-27 1973-09-17
JPS4914792A (en) * 1972-04-14 1974-02-08
JPS4966082A (en) * 1972-09-11 1974-06-26
JPS49114374A (en) * 1973-02-28 1974-10-31
JPS49114375A (en) * 1973-02-28 1974-10-31
JPS5146078A (en) * 1974-10-18 1976-04-20 Hitachi Ltd EMUAIESUGATAHANDOTAISHUSEKIKAIROSOCHINO SEIHO

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5240873A (en) * 1991-09-14 1993-08-31 Gold Star Electronics Method of making charge transfer device

Also Published As

Publication number Publication date
JPS5915498B2 (en) 1984-04-10

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