JPS57181276A - Solid-state image pickup device - Google Patents

Solid-state image pickup device

Info

Publication number
JPS57181276A
JPS57181276A JP56067423A JP6742381A JPS57181276A JP S57181276 A JPS57181276 A JP S57181276A JP 56067423 A JP56067423 A JP 56067423A JP 6742381 A JP6742381 A JP 6742381A JP S57181276 A JPS57181276 A JP S57181276A
Authority
JP
Japan
Prior art keywords
storage electrode
transfer gate
photodiode
transfer
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56067423A
Other languages
Japanese (ja)
Inventor
Yuichiro Ito
Hideo Sei
Akira Shimohashi
Shuji Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56067423A priority Critical patent/JPS57181276A/en
Publication of JPS57181276A publication Critical patent/JPS57181276A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To improve the transfer efficiency of signal charge by forming a storage electrode of a resistive material, and giving the storage electrode a difference in potential in such a way that a well of a potential under the storage electrode becomes deep on a transfer gate side. CONSTITUTION:On a semiconductor substrate 9, a photodiode 1, a storage electrode 3, a transfer gate 4, and a transfer electrode 6 of a CCD are formed. The storage electrode 3 is formed of a resistive material such as polysilicon, and a terminal edge Z1 on the side of the photodiode 1 and a terminal edge Z2 of the side of a transfer gate 4 are provided with terminals 27a and 27b respectively. When the terminal 27b is applied with a higher voltage than the terminal 27a, a potential surface under the storage electrode is high on the photodiode side 1 and low on the transfer gate side 4. Consequently, an acceleration electric field in the direction of the transfer gate 4 is applied to signal charge generated by the photodiode 1. For this purpose, a positive voltage is applied to the transfer gate 4 to eliminate a potential barrier, and then the signal charge flows into a well 53 formed under the transfer electrode 6 of the CCD.
JP56067423A 1981-04-30 1981-04-30 Solid-state image pickup device Pending JPS57181276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56067423A JPS57181276A (en) 1981-04-30 1981-04-30 Solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56067423A JPS57181276A (en) 1981-04-30 1981-04-30 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS57181276A true JPS57181276A (en) 1982-11-08

Family

ID=13344482

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56067423A Pending JPS57181276A (en) 1981-04-30 1981-04-30 Solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS57181276A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545820U (en) * 1991-11-19 1993-06-18 積水化学工業株式会社 Lighting equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0545820U (en) * 1991-11-19 1993-06-18 積水化学工業株式会社 Lighting equipment

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