GB1413092A - Image pick-up devices - Google Patents
Image pick-up devicesInfo
- Publication number
- GB1413092A GB1413092A GB3178373A GB3178373A GB1413092A GB 1413092 A GB1413092 A GB 1413092A GB 3178373 A GB3178373 A GB 3178373A GB 3178373 A GB3178373 A GB 3178373A GB 1413092 A GB1413092 A GB 1413092A
- Authority
- GB
- United Kingdom
- Prior art keywords
- drain
- charge
- transfer
- storage
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000009413 insulation Methods 0.000 abstract 2
- 238000005036 potential barrier Methods 0.000 abstract 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 239000002800 charge carrier Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1062—Channel region of field-effect devices of charge coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
1413092 Charge transfer image pick-up devices WESTERN ELECTRIC CO Inc 4 July 1973 [10 July 1972] 31783/73 Heading H1K In a charge transfer image pickup device including sites in a medium at which mobile charge carriers produced by an image can be integrated and stored, and a plurality of transfer electrodes insulatedly overlying the medium for transferring stored charges to an output, means are provided for establishing a drain adjacent each storage site and for establishing a surface potential between site and drain such that any excess mobile carriers at the site are transferred to the drain rather than to adjacent storage sites. In a typical area imaging device Fig. 1, based on a P-type silicon wafer, having an illuminated image area and a storage and readout area shielded from light the storage sites are located at the intersections of transfer electrodes in groups #1i and #2i and P-type channels 13 defined between potential barriers provided by P+-type finger regions 12. When sufficient charge is stored to raise the site potential to that of the barrier charge flows to an N + drain region 15 held at a fixed potential. Transfer of charges to the storage and readout area and hence to the output is as described in Specification 1,365,751. Alternative ways of providing the barrier are to increase the thickness of the oxide insulation over and adjacent the fingers of the drain region or to provide an additional fixed bias electrode on the insulation there from which the overlying transfer electrodes are insulated. In the line image pick-up device of Fig. 5 excess charges accumulated in the storage sites pass to N+ drain region 20 by overcoming the potential barrier provided by the voltage on electrode 22, which is less than that applied to electrode #2 to transfer stored charge to the readout area, or by a P + region in the same position. The drain may alternatively be constituted by an area underlying a suitably biased electrode and extending to an N+ region. The devices are produced by conventional processing.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27033872A | 1972-07-10 | 1972-07-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1413092A true GB1413092A (en) | 1975-11-05 |
Family
ID=23030921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3178373A Expired GB1413092A (en) | 1972-07-10 | 1973-07-04 | Image pick-up devices |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5222495B2 (en) |
| BE (1) | BE802002A (en) |
| CA (1) | CA1106477A (en) |
| DE (1) | DE2334116C3 (en) |
| FR (1) | FR2197287B1 (en) |
| GB (1) | GB1413092A (en) |
| IT (1) | IT991964B (en) |
| NL (1) | NL165607C (en) |
| SE (1) | SE382148B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4733406A (en) * | 1981-09-17 | 1988-03-22 | Canon Kabushiki Kaisha | Image sensing charge coupled device |
| US4833515A (en) * | 1985-09-20 | 1989-05-23 | U.S. Philips Corp. | Imaging devices comprising photovoltaic detector elements |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49131525A (en) * | 1973-04-05 | 1974-12-17 | ||
| US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
| JPS5140790A (en) * | 1974-10-04 | 1976-04-05 | Oki Electric Ind Co Ltd | |
| JPS5732547B2 (en) * | 1974-12-25 | 1982-07-12 | ||
| DE2813254C2 (en) * | 1978-03-28 | 1979-12-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | One-dimensional CCD sensor with overflow device |
| JPS60244064A (en) * | 1984-05-18 | 1985-12-03 | Nec Corp | Solid-state image pickup device |
| JPS60163876U (en) * | 1985-03-06 | 1985-10-31 | 富士通株式会社 | semiconductor imaging device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1566558A (en) * | 1968-03-20 | 1969-05-09 | ||
| IE34899B1 (en) * | 1970-02-16 | 1975-09-17 | Western Electric Co | Improvements in or relating to semiconductor devices |
| FR2101023B1 (en) * | 1970-08-07 | 1973-11-23 | Thomson Csf |
-
1973
- 1973-01-19 CA CA161,619A patent/CA1106477A/en not_active Expired
- 1973-07-02 SE SE7309285A patent/SE382148B/en unknown
- 1973-07-04 NL NL7309340A patent/NL165607C/en not_active IP Right Cessation
- 1973-07-04 GB GB3178373A patent/GB1413092A/en not_active Expired
- 1973-07-05 IT IT5127473A patent/IT991964B/en active
- 1973-07-05 DE DE19732334116 patent/DE2334116C3/en not_active Expired
- 1973-07-05 FR FR7324749A patent/FR2197287B1/fr not_active Expired
- 1973-07-06 BE BE133191A patent/BE802002A/en not_active IP Right Cessation
- 1973-07-10 JP JP48077186A patent/JPS5222495B2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4733406A (en) * | 1981-09-17 | 1988-03-22 | Canon Kabushiki Kaisha | Image sensing charge coupled device |
| US4833515A (en) * | 1985-09-20 | 1989-05-23 | U.S. Philips Corp. | Imaging devices comprising photovoltaic detector elements |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2334116C3 (en) | 1983-11-10 |
| CA1106477A (en) | 1981-08-04 |
| SE382148B (en) | 1976-01-12 |
| DE2334116B2 (en) | 1977-06-30 |
| NL165607B (en) | 1980-11-17 |
| FR2197287A1 (en) | 1974-03-22 |
| IT991964B (en) | 1975-08-30 |
| DE2334116A1 (en) | 1974-01-31 |
| NL165607C (en) | 1981-04-15 |
| NL7309340A (en) | 1974-01-14 |
| BE802002A (en) | 1973-11-05 |
| JPS4946625A (en) | 1974-05-04 |
| JPS5222495B2 (en) | 1977-06-17 |
| FR2197287B1 (en) | 1976-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930703 |