GB1413092A - Image pick-up devices - Google Patents

Image pick-up devices

Info

Publication number
GB1413092A
GB1413092A GB3178373A GB3178373A GB1413092A GB 1413092 A GB1413092 A GB 1413092A GB 3178373 A GB3178373 A GB 3178373A GB 3178373 A GB3178373 A GB 3178373A GB 1413092 A GB1413092 A GB 1413092A
Authority
GB
United Kingdom
Prior art keywords
drain
charge
transfer
storage
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3178373A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1413092A publication Critical patent/GB1413092A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1413092 Charge transfer image pick-up devices WESTERN ELECTRIC CO Inc 4 July 1973 [10 July 1972] 31783/73 Heading H1K In a charge transfer image pickup device including sites in a medium at which mobile charge carriers produced by an image can be integrated and stored, and a plurality of transfer electrodes insulatedly overlying the medium for transferring stored charges to an output, means are provided for establishing a drain adjacent each storage site and for establishing a surface potential between site and drain such that any excess mobile carriers at the site are transferred to the drain rather than to adjacent storage sites. In a typical area imaging device Fig. 1, based on a P-type silicon wafer, having an illuminated image area and a storage and readout area shielded from light the storage sites are located at the intersections of transfer electrodes in groups #1i and #2i and P-type channels 13 defined between potential barriers provided by P+-type finger regions 12. When sufficient charge is stored to raise the site potential to that of the barrier charge flows to an N + drain region 15 held at a fixed potential. Transfer of charges to the storage and readout area and hence to the output is as described in Specification 1,365,751. Alternative ways of providing the barrier are to increase the thickness of the oxide insulation over and adjacent the fingers of the drain region or to provide an additional fixed bias electrode on the insulation there from which the overlying transfer electrodes are insulated. In the line image pick-up device of Fig. 5 excess charges accumulated in the storage sites pass to N+ drain region 20 by overcoming the potential barrier provided by the voltage on electrode 22, which is less than that applied to electrode #2 to transfer stored charge to the readout area, or by a P + region in the same position. The drain may alternatively be constituted by an area underlying a suitably biased electrode and extending to an N+ region. The devices are produced by conventional processing.
GB3178373A 1972-07-10 1973-07-04 Image pick-up devices Expired GB1413092A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27033872A 1972-07-10 1972-07-10

Publications (1)

Publication Number Publication Date
GB1413092A true GB1413092A (en) 1975-11-05

Family

ID=23030921

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3178373A Expired GB1413092A (en) 1972-07-10 1973-07-04 Image pick-up devices

Country Status (9)

Country Link
JP (1) JPS5222495B2 (en)
BE (1) BE802002A (en)
CA (1) CA1106477A (en)
DE (1) DE2334116C3 (en)
FR (1) FR2197287B1 (en)
GB (1) GB1413092A (en)
IT (1) IT991964B (en)
NL (1) NL165607C (en)
SE (1) SE382148B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733406A (en) * 1981-09-17 1988-03-22 Canon Kabushiki Kaisha Image sensing charge coupled device
US4833515A (en) * 1985-09-20 1989-05-23 U.S. Philips Corp. Imaging devices comprising photovoltaic detector elements

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131525A (en) * 1973-04-05 1974-12-17
US3866067A (en) * 1973-05-21 1975-02-11 Fairchild Camera Instr Co Charge coupled device with exposure and antiblooming control
JPS5140790A (en) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS5732547B2 (en) * 1974-12-25 1982-07-12
DE2813254C2 (en) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen One-dimensional CCD sensor with overflow device
JPS60244064A (en) * 1984-05-18 1985-12-03 Nec Corp Solid-state image pickup device
JPS60163876U (en) * 1985-03-06 1985-10-31 富士通株式会社 semiconductor imaging device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1566558A (en) * 1968-03-20 1969-05-09
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
FR2101023B1 (en) * 1970-08-07 1973-11-23 Thomson Csf

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733406A (en) * 1981-09-17 1988-03-22 Canon Kabushiki Kaisha Image sensing charge coupled device
US4833515A (en) * 1985-09-20 1989-05-23 U.S. Philips Corp. Imaging devices comprising photovoltaic detector elements

Also Published As

Publication number Publication date
SE382148B (en) 1976-01-12
NL165607C (en) 1981-04-15
DE2334116A1 (en) 1974-01-31
NL165607B (en) 1980-11-17
IT991964B (en) 1975-08-30
FR2197287A1 (en) 1974-03-22
FR2197287B1 (en) 1976-05-28
CA1106477A (en) 1981-08-04
JPS4946625A (en) 1974-05-04
JPS5222495B2 (en) 1977-06-17
BE802002A (en) 1973-11-05
DE2334116C3 (en) 1983-11-10
NL7309340A (en) 1974-01-14
DE2334116B2 (en) 1977-06-30

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19930703