IT991964B - OVERLOAD CHANNEL FOR CHARGE TRANSFER IMAGE REPRESENTATION DEVICES - Google Patents

OVERLOAD CHANNEL FOR CHARGE TRANSFER IMAGE REPRESENTATION DEVICES

Info

Publication number
IT991964B
IT991964B IT5127473A IT5127473A IT991964B IT 991964 B IT991964 B IT 991964B IT 5127473 A IT5127473 A IT 5127473A IT 5127473 A IT5127473 A IT 5127473A IT 991964 B IT991964 B IT 991964B
Authority
IT
Italy
Prior art keywords
charge transfer
transfer image
image representation
overload channel
representation devices
Prior art date
Application number
IT5127473A
Other languages
Italian (it)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Application granted granted Critical
Publication of IT991964B publication Critical patent/IT991964B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025Channel region of field-effect devices
    • H01L29/1062Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
IT5127473A 1972-07-10 1973-07-05 OVERLOAD CHANNEL FOR CHARGE TRANSFER IMAGE REPRESENTATION DEVICES IT991964B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27033872A 1972-07-10 1972-07-10

Publications (1)

Publication Number Publication Date
IT991964B true IT991964B (en) 1975-08-30

Family

ID=23030921

Family Applications (1)

Application Number Title Priority Date Filing Date
IT5127473A IT991964B (en) 1972-07-10 1973-07-05 OVERLOAD CHANNEL FOR CHARGE TRANSFER IMAGE REPRESENTATION DEVICES

Country Status (9)

Country Link
JP (1) JPS5222495B2 (en)
BE (1) BE802002A (en)
CA (1) CA1106477A (en)
DE (1) DE2334116C3 (en)
FR (1) FR2197287B1 (en)
GB (1) GB1413092A (en)
IT (1) IT991964B (en)
NL (1) NL165607C (en)
SE (1) SE382148B (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49131525A (en) * 1973-04-05 1974-12-17
US3866067A (en) * 1973-05-21 1975-02-11 Fairchild Camera Instr Co Charge coupled device with exposure and antiblooming control
JPS5140790A (en) * 1974-10-04 1976-04-05 Oki Electric Ind Co Ltd
JPS5732547B2 (en) * 1974-12-25 1982-07-12
DE2813254C2 (en) * 1978-03-28 1979-12-06 Siemens Ag, 1000 Berlin Und 8000 Muenchen One-dimensional CCD sensor with overflow device
JPS5847378A (en) * 1981-09-17 1983-03-19 Canon Inc Image pickup element
JPS60244064A (en) * 1984-05-18 1985-12-03 Nec Corp Solid-state image pickup device
JPS60163876U (en) * 1985-03-06 1985-10-31 富士通株式会社 semiconductor imaging device
GB2181012B (en) * 1985-09-20 1989-09-13 Philips Electronic Associated Imaging devices comprising photovoltaic detector elements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1566558A (en) * 1968-03-20 1969-05-09
IE34899B1 (en) * 1970-02-16 1975-09-17 Western Electric Co Improvements in or relating to semiconductor devices
FR2101023B1 (en) * 1970-08-07 1973-11-23 Thomson Csf

Also Published As

Publication number Publication date
CA1106477A (en) 1981-08-04
BE802002A (en) 1973-11-05
NL165607C (en) 1981-04-15
DE2334116C3 (en) 1983-11-10
DE2334116B2 (en) 1977-06-30
NL7309340A (en) 1974-01-14
DE2334116A1 (en) 1974-01-31
FR2197287A1 (en) 1974-03-22
NL165607B (en) 1980-11-17
SE382148B (en) 1976-01-12
JPS4946625A (en) 1974-05-04
JPS5222495B2 (en) 1977-06-17
FR2197287B1 (en) 1976-05-28
GB1413092A (en) 1975-11-05

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