GB1529489A - Optoelectronic sensor arrangements - Google Patents

Optoelectronic sensor arrangements

Info

Publication number
GB1529489A
GB1529489A GB44791/76A GB4479176A GB1529489A GB 1529489 A GB1529489 A GB 1529489A GB 44791/76 A GB44791/76 A GB 44791/76A GB 4479176 A GB4479176 A GB 4479176A GB 1529489 A GB1529489 A GB 1529489A
Authority
GB
United Kingdom
Prior art keywords
read
sensor
storage
storage position
zone beneath
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB44791/76A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19752553703 external-priority patent/DE2553703C2/en
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1529489A publication Critical patent/GB1529489A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14887Blooming suppression
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14825Linear CCD imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/701Line sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

1529489 Television SIEMENS AG 28 Oct 1976 [28 Nov 1975] 44791/76 Heading H4F [Also in Division H1] An optoelectronic sensor arrangement formed on the surface of a doped semiconductor substrate, comprises a linear optoelectronic sensor consisting of image elements 31-36, an overflow channel 6 serving as a protection for said sensor against excessive radiation, and first and second series read-out shift registers 4, 5. The sensor is read out into the storage positions of the first shift register, which consists of a charge-coupled device, each said storage position being formed by four adjacent electrodes 401-404, the arrangement being such that two image elements can be read into each storage position, one image element being read into a storage zone beneath electrode 402 and the other image element being read into a storage zone beneath electrode 404. The storage zone beneath electrode 404 is then immediately read out into the corresponding storage position of the second shift register 5 which is also a charge-coupled device. The information stored in the two shift registers is then read out in serial manner. It is stated that the present arrangement provides for an increased resolution of the sensor.
GB44791/76A 1975-11-28 1976-10-28 Optoelectronic sensor arrangements Expired GB1529489A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752553703 DE2553703C2 (en) 1975-11-28 Optoelectronic sensor arrangement and method for their operation

Publications (1)

Publication Number Publication Date
GB1529489A true GB1529489A (en) 1978-10-18

Family

ID=5962993

Family Applications (1)

Application Number Title Priority Date Filing Date
GB44791/76A Expired GB1529489A (en) 1975-11-28 1976-10-28 Optoelectronic sensor arrangements

Country Status (6)

Country Link
JP (1) JPS5267992A (en)
BE (1) BE848809A (en)
FR (1) FR2333396A1 (en)
GB (1) GB1529489A (en)
IT (1) IT1064417B (en)
NL (1) NL7613104A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223809A1 (en) * 1981-09-17 1983-03-31 Canon K.K., Tokyo SOLID BODY IMAGE SCREEN
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders
US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562071A (en) * 1979-06-20 1981-01-10 Toshiba Corp Ccd detector
JPS5913369A (en) * 1982-07-13 1984-01-24 Sony Corp Solid-state image pickup element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223809A1 (en) * 1981-09-17 1983-03-31 Canon K.K., Tokyo SOLID BODY IMAGE SCREEN
US4486783A (en) * 1981-09-17 1984-12-04 Canon Kabushiki Kaisha Solid state image sensing device
US4499496A (en) * 1981-09-17 1985-02-12 Canon Kabushiki Kaisha Solid state image sensing device
GB2125651A (en) * 1982-08-18 1984-03-07 Eastman Kodak Co Image sensors for rangefinders

Also Published As

Publication number Publication date
FR2333396A1 (en) 1977-06-24
IT1064417B (en) 1985-02-18
JPS5267992A (en) 1977-06-06
FR2333396B1 (en) 1978-12-22
BE848809A (en) 1977-03-16
NL7613104A (en) 1977-06-01
DE2553703B1 (en) 1976-09-09

Similar Documents

Publication Publication Date Title
GB1370449A (en) Sensing apparatus and arrays
JPS55156371A (en) Non-volatile semiconductor memory device
GB1503820A (en) Interlaced readout of a charge coupled array
GB1531180A (en) Solid-state imaging devices
JPS54111798A (en) Image sensor of charge transfer type
DE3280202D1 (en) HETEROUITION SEMICONDUCTOR DEVICE WITH HIGH ELECTRONIC MOBILITY.
FR2325196A1 (en) SEMICONDUCTOR DEVICE PRESENTING REDUCED SURFACE LEAKAGE CURRENTS AND MANUFACTURING PROCESS
FR2656756B1 (en) DEVICE FOR TAKING PICTURES WITH INTEGRATED SCANNING CIRCUITS.
GB1414183A (en) Charge coupled devices
GB1529489A (en) Optoelectronic sensor arrangements
GB1509171A (en) Input circuits for inserting charge packets into charge-transfer-devices
GB1541145A (en) Metal oxide semiconductor field effect transistor
DE3165313D1 (en) Semiconductor memory device with substrate voltage biasing
GB1470587A (en) Linear imaging arrays
ES410300A1 (en) Iamge pick up devices
JPS5552675A (en) Solid state pickup device
GB1518176A (en) Charge transfer image device
JPS55141750A (en) Insulated gate type semiconductor device
JPS5228277A (en) Non-voltatile semiconductor memory device
GB1457792A (en) Semiconductor devices
JPS5630773A (en) Semiconductor integrated circuit device
JPS5364434A (en) Sense circuit of mos semiconductor memory
GB1480761A (en) Chargecoupled area array
JPS5387188A (en) Semiconductor device
JPS52149988A (en) Semiconductor device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee